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    DUAL DAMASCENE MULTI-LEVEL METALLIZATION
    2.
    发明申请
    DUAL DAMASCENE MULTI-LEVEL METALLIZATION 审中-公开
    双重DAMASCENE多级金属化

    公开(公告)号：WO02099873A3

    公开(公告)日：2003-09-18

    申请号：PCT/EP0205282

    申请日：2002-05-14

    Applicant: IBM ,  IBM DEUTSCHLAND

    Inventor： AGARWALA BIRENDRA N ,  COKER ERIC M ,  CORREALE ANTHONY JR ,  RATHORE HAZARA S ,  SULLIVAN TIMOTHY D

    IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

    CPC classification number: H01L21/76852 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An interconnect structure, comprising: a lower level wire (200) having a side and a bottom, the lower level wire comprising: a lower core conductor (220) and a lower conductive liner (215), the lower conductive liner on the side and the bottom of the lower level wire; an upper level (205) wire having a side and a bottom, the upper level wire comprising an upper core conductor (230) and an upper conductive liner (225), the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region (240A), (240B).

    Abstract translation: 一种互连结构，包括：具有侧面和底部的下层导线（200），所述下层导线包括：下芯导体（220）和下导电衬套（215），所述下导电衬垫在侧面，以及 下层电线底部; 具有侧面和底部的上部电缆（205），所述上部电线包括上部芯导体（230）和上部导电衬垫（225），所述上部电线的侧面和底部上的上部导电衬垫 ; 并且所述上导电衬套与所述下芯导体接触并且还在衬套到衬垫接触区域（240A），（240B）中与所述下导电衬垫接触。

    TUNGSTEN LINER FOR ALUMINUM-BASED ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE
    3.
    发明申请
    TUNGSTEN LINER FOR ALUMINUM-BASED ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE 审中-公开
    基于铝的电阻互连结构的TUNGSTEN LINER

    公开(公告)号：WO2009117255A3

    公开(公告)日：2009-12-30

    申请号：PCT/US2009036091

    申请日：2009-03-05

    Applicant: IBM ,  CHAPPLE-SOKOL JONATHAN D ,  DELIBAC DANIEL A ,  ZHONG-XIANG HE ,  LEE TOM C ,  MURPHY WILLIAM J ,  SULLIVAN TIMOTHY D ,  THOMAS DAVID C ,  VANSLETTE DANIEL S

    Inventor： CHAPPLE-SOKOL JONATHAN D ,  DELIBAC DANIEL A ,  ZHONG-XIANG HE ,  LEE TOM C ,  MURPHY WILLIAM J ,  SULLIVAN TIMOTHY D ,  THOMAS DAVID C ,  VANSLETTE DANIEL S

    IPC: H01L21/4763

    CPC classification number: H01L23/53223 ,  H01L23/5329 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack (360L, Figure 5) comprising, from bottom to top, a low-oxygen-reactivity metal layer (10), a bottom transition metal layer (20), a bottom transition metal nitride layer (30), an aluminum-copper layer (40), an optional top transition metal layer (50), and a top transition metal nitride layer (60). The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen- reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.

    Abstract translation: 在半导体衬底上形成包含埋在电介质材料层中的底层W通孔的底层互连层。 从底部到顶部包含低氧反应性金属层（10），底部过渡金属层（20），底部过渡金属氮化物层（30），铝合金（30）的金属层堆叠（360L，图5） （40），可选的顶部过渡金属层（50）和顶部过渡金属氮化物层（60）。 金属层堆叠被光刻图案化以形成至少一个构成金属互连结构的铝基金属线。 低氧反应性金属层由于通过低氧反应性金属层防止了底部过渡金属层和介电材料层之间的化合物的形成，从而提高了至少一种铝基金属线的电迁移率 不与介电材料层相互作用。

    Dual damascene multi-level metallization
    5.
    发明专利
    Dual damascene multi-level metallization 未知

    公开(公告)号：AU2002314065A1

    公开(公告)日：2002-12-16

    申请号：AU2002314065

    申请日：2002-05-14

    Applicant: IBM

    Inventor： COKER ERIC M ,  RATHORE HAZARA S ,  CORREALE ANTHONY JR ,  AGARWALA BIRENDRA N ,  SULLIVAN TIMOTHY D

    IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528

    Abstract: A method for forming an interconnect structure, the interconnect structure comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.

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