Abstract:
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
Abstract:
The organic MEMS according to the present invention comprises a polymeric substrate comprising a substrate surface including a first region and a second region. A polymer coating is applied to the first region to provide a coating surface that is spaced apart from the substrate surface. A terminal is disposed on the second region. A metallic trace is affixed to the coating surface such that the metallic trace forms a flexible extension over the second region. The extension has a rest position where the extension is spaced apart from the terminal, and a flexed position where the extension is disposed towards the terminal. An actuator is used to provide an electric field to deflect the extension from the rest position to the flexed position. By changing the spacing between the extension and the terminal, it is possible to change the electrical condition provided by the MEMS.
Abstract:
An organic semiconductor device ( 11 ) can be embedded within a printed wiring board ( 10 ). In various embodiments, the embedded device ( 11 ) can be accompanied by other organic semiconductor devices ( 31 ) and/or passive electrical components ( 26 ). When so embedded, conductive vias ( 41, 42, 43 ) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.
Abstract:
Thin film ceramic foil capacitors are mass-produced using inline reel-to-reel processing techniques by starting (100) with a length of copper foil which serves as one plate of the capacitor, then depositing (120) a layer of a ceramic precursor on a portion of one side of the copper foil at a first station. The foil is advanced (117, 127, 137, 147) to the next station where the ceramic precursor and the copper foil are heated (130) to remove any carrier solvents or vehicles, then pyrolyzed (140) to remove any residual organic materials. It is then sintered (150) at high temperatures to convert the ceramic to polycrystalline ceramic. A final top metal layer is then deposited (160) on the polycrystalline ceramic to form the other plate of the capacitor. The entire process or portions of the process is performed in-line such that one or more of the steps are simultaneously performed on different portions of the foil at the same time, or such that, after any one step, the foil is advanced and the step repeated at a new location on the foil.
Abstract:
Thin film ceramic foil capacitors are mass-produced using inline reel-to-reel processing techniques by starting (100) with a length of copper foil which serves as one plate of the capacitor, then depositing (120) a layer of a ceramic precursor on a portion of one side of the copper foil at a first station. The foil is advanced (117, 127, 137, 147) to the next station where the ceramic precursor and the copper foil are heated (130) to remove any carrier solvents or vehicles, then pyrolyzed (140) to remove any residual organic materials. It is then sintered (150) at high temperatures to convert the ceramic to polycrystalline ceramic. A final top metal layer is then deposited (160) on the polycrystalline ceramic to form the other plate of the capacitor. The entire process or portions of the process is performed in-line such that one or more of the steps are simultaneously performed on different portions of the foil at the same time, or such that, after any one step, the foil is advanced and the step repeated at a new location on the foil.
Abstract:
An organic semiconductor device ( 11 ) can be embedded within a printed wiring board ( 10 ). In various embodiments, the embedded device ( 11 ) can be accompanied by other organic semiconductor devices ( 31 ) and/or passive electrical components ( 26 ). When so embedded, conductive vias ( 41, 42, 43 ) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.
Abstract:
An organic semiconductor device (11) can be embedded within a printed wiring board (10). In various embodiments, the embedded device (11) can be accompanied by other organic semiconductor devices (31) and/or passive electrical components (26). When so embedded, conductive vias (41, 42, 43) can be used to facilitate electrical connection to the embedded device. In various embodiments, specific categories of materials and/or processing steps are used to facilitate the making of organic semiconductors and/or passive electrical components, embedded or otherwise.
Abstract:
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers (243) by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer (272) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (260) of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer (290) made of e.g. a III-V semiconductor compound such as AlGaAs.
Abstract:
Thin film ceramic foil capacitors are produced using inline reel-to-reel processing techniques by starting (100) with a length of copper foil which serves as one plate of the capacitor, then depositing (120) a layer of a ceramic precursor on a portion of one side of the copper foil at a first station. The foil is advanced (117, 127, 137, 147) to the next station where the ceramic precursor and the copper foil are heated (130) to remove any carrier solvents or vehicles, then pyrolyzed (140) to remove any residual organic materials. It is then sintered (150) at high temperatures to convert the ceramic to polycrystalline ceramic. A final top metal layer is then deposited (160) on the polycrystalline ceramic to form the other plate of the capacitor
Abstract:
Thin film ceramic foil capacitors are produced using inline reel-to-reel processing techniques by starting (100) with a length of copper foil which serves as one plate of the capacitor, then depositing (120) a layer of a ceramic precursor on a portion of one side of the copper foil at a first station. The foil is advanced (117, 127, 137, 147) to the next station where the ceramic precursor and the copper foil are heated (130) to remove any carrier solvents or vehicles, then pyrolyzed (140) to remove any residual organic materials. It is then sintered (150) at high temperatures to convert the ceramic to polycrystalline ceramic. A final top metal layer is then deposited (160) on the polycrystalline ceramic to form the other plate of the capacitor