-
公开(公告)号：CN101911219B
公开(公告)日：2015-12-16
申请号：CN200980102372.2
申请日：2009-01-09
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/62 , B23K1/0008 , B23K1/0016 , B23K35/025 , H01B1/02 , H01L2924/0002 , H01L2933/0066 , H05K1/092 , Y10T29/49144 , H01L2924/00
Abstract: 本发明的目的在于提供一种制造导电性材料的方法，所述导电性材料为产生低电阻值的导电性材料，且是使用不含粘接剂、廉价且稳定的导电性材料用组合物获得的。通过包含将含有具有0.1μm～15μm的平均粒径(中位粒径)的银粒子和金属氧化物的第1导电性材料用组合物进行烧成以获得导电性材料的制造方法，可以提供上述导电性材料。另外，通过包含将含有具有0.1μm～15μm的平均粒径(中位粒径)的银粒子的第2导电性材料用组合物在氧气、臭氧或大气环境下、于150℃～320℃范围的温度下进行烧成以获得导电性材料的制造方法，可以提供上述导电性材料。
-
公开(公告)号：CN102473485A
公开(公告)日：2012-05-23
申请号：CN201080026623.6
申请日：2010-07-21
Applicant: 日亚化学工业株式会社
CPC classification number: H01B1/22 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48097 , H01L2224/48247 , H01L2224/48997 , H01L2224/73265 , H01L2224/83439 , H01L2224/8384 , H01L2224/85205 , H01L2224/85951 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01058 , H01L2924/01063 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/48455
Abstract: 本发明的目的在于提供制造导电性材料的方法，所述导电性材料是产生低电阻值的导电性材料，其是使用廉价并且稳定的导电性材料用组合物而得到的。在本发明中通过一种导电性材料的制造方法，能够得到产生低电阻值的导电性材料，该制造方法具有对包含固化或半固化的热固性树脂和热塑性树脂中的至少任意一种以及银粒子的导电性材料用组合物进行加热的工序。这样的导电性材料是在熔融粘合的银粒子中分散有平均粒径为0.1μm以上且10μm以下的热固性树脂粉体的导电性材料而成的导电性材料。另外，这样的导电性材料是在熔融粘合的银粒子中熔敷热塑性树脂的导电性材料而成的导电性材料。
-
公开(公告)号：CN102292802B
公开(公告)日：2014-11-19
申请号：CN201080005228.X
申请日：2010-01-20
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599
Abstract: 本发明目的是提供一种制造产生较低的电阻值的导电性材料的方法，该导电性材料是使用不含有粘接剂的便宜且稳定的导电性材料用的组成物而得到的导电性材料。一种将对基体的表面设置的银或氧化银与对半导体元件的表面设置的银或氧化银接合的半导体装置的制造方法，经过以下的工序制造半导体装置：在对基体的表面设置的银或氧化银之上配置对半导体元件的表面设置的银或氧化银以使两者接触的工序；对半导体元件或基体施加压力或施加超声波振动、将半导体元件与基体临时接合的工序；对半导体元件及基体施加150℃～900℃的温度、将半导体元件与基体正式接合的工序。
-
Patent Agency Ranking
公开(公告)号：CN102292802A
公开(公告)日：2011-12-21
申请号：CN201080005228.X
申请日：2010-01-20
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/44 , H01L23/08 , H01L23/293 , H01L23/49579 , H01L23/49582 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/83 , H01L33/62 , H01L2224/05568 , H01L2224/16 , H01L2224/16225 , H01L2224/2712 , H01L2224/2745 , H01L2224/275 , H01L2224/29023 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29187 , H01L2224/2919 , H01L2224/29339 , H01L2224/32225 , H01L2224/45144 , H01L2224/73265 , H01L2224/83048 , H01L2224/83055 , H01L2224/83075 , H01L2224/83201 , H01L2224/83203 , H01L2224/83205 , H01L2224/83207 , H01L2224/83439 , H01L2224/83487 , H01L2224/8383 , H01L2224/8384 , H01L2224/83894 , H01L2224/83895 , H01L2224/83896 , H01L2224/83907 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0541 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15747 , H01L2924/1576 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/201 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/3025 , H01L2933/0066 , H01S5/0226 , H01L2924/00015 , H01L2924/00 , H01L2924/3512 , H01L2224/48 , H01L2224/05599
Abstract: 本发明目的是提供一种制造产生较低的电阻值的导电性材料的方法，该导电性材料是使用不含有粘接剂的便宜且稳定的导电性材料用的组成物而得到的导电性材料。一种将对基体的表面设置的银或氧化银与对半导体元件的表面设置的银或氧化银接合的半导体装置的制造方法，经过以下的工序制造半导体装置：在对基体的表面设置的银或氧化银之上配置对半导体元件的表面设置的银或氧化银以使两者接触的工序；对半导体元件或基体施加压力或施加超声波振动、将半导体元件与基体临时接合的工序；对半导体元件及基体施加150℃～900℃的温度、将半导体元件与基体正式接合的工序。
-
公开(公告)号：CN102473485B
公开(公告)日：2016-06-29
申请号：CN201080026623.6
申请日：2010-07-21
Applicant: 日亚化学工业株式会社
CPC classification number: H01B1/22 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48097 , H01L2224/48247 , H01L2224/48997 , H01L2224/73265 , H01L2224/83439 , H01L2224/8384 , H01L2224/85205 , H01L2224/85951 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01058 , H01L2924/01063 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19107 , H01L2924/351 , H01L2924/00 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/48455
Abstract: 本发明的目的在于提供制造导电性材料的方法，所述导电性材料是产生低电阻值的导电性材料，其是使用廉价并且稳定的导电性材料用组合物而得到的。在本发明中通过一种导电性材料的制造方法，能够得到产生低电阻值的导电性材料，该制造方法具有对包含固化或半固化的热固性树脂和热塑性树脂中的至少任意一种以及银粒子的导电性材料用组合物进行加热的工序。这样的导电性材料是在熔融粘合的银粒子中分散有平均粒径为0.1μm以上且10μm以下的热固性树脂粉体的导电性材料而成的导电性材料。另外，这样的导电性材料是在熔融粘合的银粒子中熔敷热塑性树脂的导电性材料而成的导电性材料。
-
公开(公告)号：CN101911219A
公开(公告)日：2010-12-08
申请号：CN200980102372.2
申请日：2009-01-09
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/62 , B23K1/0008 , B23K1/0016 , B23K35/025 , H01B1/02 , H01L2924/0002 , H01L2933/0066 , H05K1/092 , Y10T29/49144 , H01L2924/00
Abstract: 本发明的目的在于提供一种制造导电性材料的方法，所述导电性材料为产生低电阻值的导电性材料，且是使用不含粘接剂、廉价且稳定的导电性材料用组合物获得的。通过包含将含有具有0.1μm～15μm的平均粒径(中位粒径)的银粒子和金属氧化物的第1导电性材料用组合物进行烧成以获得导电性材料的制造方法，可以提供上述导电性材料。另外，通过包含将含有具有0.1μm～15μm的平均粒径(中位粒径)的银粒子的第2导电性材料用组合物在氧气、臭氧或大气环境下、于150℃～320℃范围的温度下进行烧成以获得导电性材料的制造方法，可以提供上述导电性材料。
-
公开(公告)号：CN102292835B
公开(公告)日：2015-03-25
申请号：CN201080005218.6
申请日：2010-01-20
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/641 , H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/81907 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/83907 , H01L2224/85205 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0541 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明目的是提供一种制造产生较低的电阻值的导电性材料的方法，该导电性材料是使用不含有粘接剂的便宜且稳定的导电性材料用的组成物而得到的。一种将对基体的表面设置的银或氧化银、与对半导体元件的表面设置的银或氧化银接合的半导体装置的制造方法，经过以下的工序制造半导体装置：在对基体的表面设置的银或氧化银之上配置对半导体元件的表面设置的银或氧化银以使两者接触的工序；对半导体元件及基体施加200℃～900℃的温度、将半导体元件与基体接合的工序。
-
公开(公告)号：CN102292835A
公开(公告)日：2011-12-21
申请号：CN201080005218.6
申请日：2010-01-20
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/641 , H01L21/187 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L33/62 , H01L2224/0345 , H01L2224/0401 , H01L2224/06102 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/29386 , H01L2224/32225 , H01L2224/812 , H01L2224/81801 , H01L2224/81894 , H01L2224/81907 , H01L2224/83801 , H01L2224/8383 , H01L2224/8384 , H01L2224/83907 , H01L2224/85205 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/09701 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/19041 , H01L2924/3025 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/0541 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明目的是提供一种制造产生较低的电阻值的导电性材料的方法，该导电性材料是使用不含有粘接剂的便宜且稳定的导电性材料用的组成物而得到的。一种将对基体的表面设置的银或氧化银、与对半导体元件的表面设置的银或氧化银接合的半导体装置的制造方法，经过以下的工序制造半导体装置：在对基体的表面设置的银或氧化银之上配置对半导体元件的表面设置的银或氧化银以使两者接触的工序；对半导体元件及基体施加200℃～900℃的温度、将半导体元件与基体接合的工序。
-
-
-
-
-
-
-
Search Results
8
records
(took 0.029 seconds)
