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公开(公告)号：CN1901163A
公开(公告)日：2007-01-24
申请号：CN200610099492.X
申请日：2006-07-24
Applicant: 米辑电子股份有限公司
IPC: H01L21/822 , H01L21/768 , H01L21/60 , H01L27/04 , H01L23/522 , H01L23/485
CPC classification number: H01L24/11 , H01L21/2885 , H01L21/3144 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02166 , H01L2224/0231 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05083 , H01L2224/05556 , H01L2224/05567 , H01L2224/05568 , H01L2224/05571 , H01L2224/05644 , H01L2224/1147 , H01L2224/13021 , H01L2224/13023 , H01L2224/13099 , H01L2224/13144 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/48844 , H01L2924/00011 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/01004
Abstract: 本发明提供一种形成覆盖有聚醯亚胺(polyimide，PI)的连续电镀结构的方法，其包括(a)提供一半导体基底；(b)在该半导体基底上形成一黏着/阻障层；(c)在该黏着/阻障层上形成复数金属线路层(metal trace)；(d)在该些金属线路层中选择一目标区域做为接垫，并在该接垫上形成一金属层；(e)去除未被覆盖的该黏着/阻障层；以及(f)形成一聚醯亚胺在该半导体基底上，并暴露出该金属层。
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公开(公告)号：CN1866517A
公开(公告)日：2006-11-22
申请号：CN200610080848.5
申请日：2006-05-18
Applicant: 米辑电子股份有限公司
IPC: H01L27/00 , H01L23/522 , H01L21/02 , H01L21/768 , H01L21/00
CPC classification number: H01L23/3114 , H01L23/5227 , H01L23/525 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01011 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
Abstract: 本发明提供一种线路元件，包括：半导体基底；第一线圈，位于该半导体基底上；保护层，位于该第一线圈上；第二线圈，位于该保护层上，其中该第二线圈位于该第一线圈上，该第二线圈包括厚度大于1微米的金层。本发明的顶层线圈可以承受高电压高电流，且控制顶层线圈的电流变化可以感应底层线圈。
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公开(公告)号：CN1866468A
公开(公告)日：2006-11-22
申请号：CN200610080847.0
申请日：2006-05-18
Applicant: 米辑电子股份有限公司
IPC: H01L21/02 , H01L21/768 , H01L21/00 , H01L27/00 , H01L23/522
CPC classification number: H01L23/3114 , H01L23/5227 , H01L23/525 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01011 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
Abstract: 一种线路元件的制作方法，其包括：提供半导体基底、第一线圈及保护层，其中该第一线圈位于该半导体基底上，该保护层位于该第一线圈上；以旋涂的方法在该保护层上形成第一聚合物层；加热该第一聚合物层；以及在该第一聚合物层上形成第二线圈，其中该第二线圈位于该第一线圈上。本发明的顶层线圈可以承受高电压高电流，并且控制顶层线圈的电流变化可以感应底层线圈。
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公开(公告)号：CN1866467A
公开(公告)日：2006-11-22
申请号：CN200610080846.6
申请日：2006-05-18
Applicant: 米辑电子股份有限公司
IPC: H01L21/02 , H01L21/768 , H01L21/00 , H01L27/00 , H01L23/522
CPC classification number: H01L23/3114 , H01L23/5227 , H01L23/525 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01011 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
Abstract: 一种线路元件的制作方法，其包括：提供半导体基底、第一线圈及保护层，其中该第一线圈位于该半导体基底上，该保护层位于该第一线圈上；以及在该保护层上及该第一线圈上形成第二线圈，该形成第二线圈的步骤包括：在该保护层上形成第一金属层，在该第一金属层上形成图案定义层，位于该图案定义层内的第一开口暴露出该第一金属层，在该第一开口暴露出的该第一金属层上形成第二金属层，去除该图案定义层，以及去除未在该第二金属层下的该第一金属层。本发明的顶层线圈可以承受高电压高电流，并且控制顶层线圈的电流变化可以感应底层线圈。
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公开(公告)号：CN101958289B
公开(公告)日：2012-02-01
申请号：CN201010265667.6
申请日：2006-07-31
Applicant: 米辑电子股份有限公司
IPC: H01L23/00 , H01L23/495
CPC classification number: H01L24/11 , H01L23/525 , H01L24/12 , H01L2224/0231 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05548 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/05671 , H01L2224/05672 , H01L2224/05681 , H01L2224/05684 , H01L2224/0603 , H01L2224/06102 , H01L2224/1147 , H01L2224/11902 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13164 , H01L2224/13169 , H01L2224/13173 , H01L2224/13176 , H01L2224/13183 , H01L2224/1403 , H01L2224/141 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10329 , H01L2924/12043 , H01L2924/1305 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/05552 , H01L2924/00014 , H01L2924/013
Abstract: 本发明涉及一种半导体组件，其结构在此半导体基底的顶部表面上设有至少一接垫；一保护层(passivation layer)是位于半导体基底的顶部表面上，且位于此保护层内的至少一开口暴露出接垫；及一金属层是堆栈形成在接垫上。
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Patent Agency Ranking
公开(公告)号：CN1901161B
公开(公告)日：2010-10-27
申请号：CN200610099490.0
申请日：2006-07-24
Applicant: 米辑电子股份有限公司
IPC: H01L21/822 , H01L21/768 , H01L21/60 , H01L27/04 , H01L23/522 , H01L23/485
CPC classification number: H01L24/11 , H01L21/2885 , H01L21/3144 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/02166 , H01L2224/0231 , H01L2224/0347 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05083 , H01L2224/05556 , H01L2224/05567 , H01L2224/05568 , H01L2224/05571 , H01L2224/05644 , H01L2224/1147 , H01L2224/13021 , H01L2224/13023 , H01L2224/13099 , H01L2224/13144 , H01L2224/45144 , H01L2224/48463 , H01L2224/48644 , H01L2224/48844 , H01L2924/00011 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/01004
Abstract: 本发明提供一种形成覆盖有聚醯亚胺(polyimide，PI)的连续电镀结构的方法，其包括(a)提供一半导体基底；(b)在该半导体基底上形成一黏着/阻障层；(c)在该黏着/阻障层上形成复数金属线路层(metal trace)；(d)在该些金属线路层中选择一目标区域做为接垫，并在该接垫上形成一金属层；(e)去除未被覆盖的该黏着/阻障层；以及(f)形成一聚醯亚胺在该半导体基底上，并暴露出该金属层。
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公开(公告)号：CN1905178B
公开(公告)日：2010-09-22
申请号：CN200610099176.2
申请日：2006-07-31
Applicant: 米辑电子股份有限公司
IPC: H01L23/485 , H01L21/60 , H01L21/28
CPC classification number: H01L2224/02166 , H01L2224/48463 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/14 , H01L2924/30107 , H01L2924/00
Abstract: 本发明涉及一种线路组件结构及其制作方法，其结构在此半导体基底的顶部表面上设有至少一接垫；一保护层(passivation layer)是位于半导体基底的顶部表面上，且位于此保护层内的至少一开口暴露出接垫；及一金属层是堆栈形成在接垫上。
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公开(公告)号：CN101572244A
公开(公告)日：2009-11-04
申请号：CN200910145302.7
申请日：2006-05-18
Applicant: 米辑电子股份有限公司
CPC classification number: H01L23/3114 , H01L23/5227 , H01L23/525 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01011 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
Abstract: 本发明公开了一种线路组件制作方法，包括下列步骤：提供半导体基底、第一线圈以及保护层，其中该第一线圈位于该半导体基底之上，该保护层位于该第一线圈之上，且该保护层包括厚度介于0.2微米至1.2微米之间的含硅氮化物；以旋涂工艺形成第一聚合物层在该保护层上，且该第一聚合物层接触该保护层；在形成该第一聚合物层的步骤之后，利用1倍的曝光步进机曝光该第一聚合物层；在曝光该第一聚合物层的步骤之后，硬化该第一聚合物层；以及在硬化该第一聚合物层的步骤之后，形成第二线圈在该第一聚合物层之上、在该保护层上方以及在该第一线圈上方。
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公开(公告)号：CN1905177A
公开(公告)日：2007-01-31
申请号：CN200610099175.8
申请日：2006-07-31
Applicant: 米辑电子股份有限公司
IPC: H01L23/485 , H01L21/60 , H01L21/28
CPC classification number: H01L2224/02166 , H01L2224/48463 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/1305 , H01L2924/14 , H01L2924/30107 , H01L2924/00
Abstract: 本发明涉及一种线路组件结构及其制作方法，其结构在此半导体基底的顶部表面上设有至少一接垫；一保护层(passivation layer)是位于半导体基底的顶部表面上，且位于此保护层内的至少一开口暴露出接垫；及一金属层是堆栈形成在接垫上。
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公开(公告)号：CN1866518A
公开(公告)日：2006-11-22
申请号：CN200610080849.X
申请日：2006-05-18
Applicant: 米辑电子股份有限公司
IPC: H01L27/00 , H01L23/522 , H01L21/02 , H01L21/768 , H01L21/00
CPC classification number: H01L23/3114 , H01L23/5227 , H01L23/525 , H01L24/05 , H01L24/10 , H01L24/13 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05624 , H01L2224/13 , H01L2224/13099 , H01L2224/48463 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01009 , H01L2924/01011 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/10329 , H01L2924/1305 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2224/45099 , H01L2924/00
Abstract: 本发明提供一种线路元件，包括：半导体基底；第一线圈，位于该半导体基底上；第一环状金属结构，位于该半导体基底上，其中该第一环状金属结构环绕该第一线圈，且该第一环状金属结构与该第一线圈的最外圈之间的第一间隔的最短距离除以该第一线圈的相邻圈之间的第二间隔的最短距离得到的值介于0.1至10之间。本发明的顶层线圈可以承受高电压高电流，且控制顶层线圈的电流变化可以感应底层线圈。
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