公开(公告)号：US20030210116A1

公开(公告)日：2003-11-13

申请号：US10156780

申请日：2002-05-08

Applicant: Motorola, Inc.

Inventor： Spencer A. Lane ,  Krishna Jonnalagadda ,  Manes Eliacin

IPC: H01H051/22

CPC classification number: B81C1/00182 ,  B81B2201/045 ,  B81B2203/0315 ,  B81C2201/0108 ,  B81C2203/0136 ,  H01H59/0009 ,  H01H2001/0073

Abstract: A meso-scale MEMS device having a movable member (51) is formed using standard printed wiring board and high density interconnect technologies and practices. In one embodiment, sacrificial material disposed about the movable member (51) is removed through openings (101, 102) as formed through a cover (91) to form a cavity (121) that retains and limits the freedom of movement of the movable member (51). The movable member can support a reflective surface (224) to thereby provide a mechanism that will support a projection display and/or image scanner (such as a bar code scanner).

Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有可移动部件（51）的中尺度MEMS器件。 在一个实施例中，围绕可移动构件（51）设置的牺牲材料通过通过盖（91）形成的开口（101,102）去除以形成空腔（121），其保持并限制可移动构件 （51）。 可移动构件可以支撑反射表面（224），从而提供将支撑投影显示和/或图像扫描器（例如条形码扫描器）的机构。

公开(公告)号：US20030087198A1

公开(公告)日：2003-05-08

申请号：US10246610

申请日：2002-09-18

Inventor： Saman Mangala Dharmatilleke ,  H. Thurman Henderson

IPC: G03F007/00

CPC classification number: B81C1/00119 ,  B81B2201/058 ,  B81C2201/0108

Abstract: A procedure is presented herein for formation of NEMS/MEMS components and systems with direct arbitrary three-dimensionality for the first time in NEMS/MEMS fabrication. This method leads also to a simple and effective external nullquick-connectionnull interconnect scheme where ordinary fused silica tubes may be press-fitted into the surface opening of this system to withstand high pressure. This method may be extended for connection of multiple levels of polymer fluidic motherboards together using small sections of fused silica tubing, with no loss of stacking volume because of the lack of any connector lips or bosses. This scheme gives the flexibility of allowing multiple stacks of polymeric 3-D components (motherboards) while being able to control the channel lengths within the stacks as desired. Mixing chambers can also be molded in a single silicone elastomer (or other material) layer, because true three-dimensionality is trivially possible without the complexity of multi stacked lithography.

Abstract translation: 本文介绍了在NEMS / MEMS制造中首次形成具有直接任意三维的NEMS / MEMS部件和系统的程序。 这种方法还引入了一种简单有效的外部“快速连接”互连方案，其中普通的熔融石英管可以压配合到该系统的表面开口中以承受高压。 这种方法可以延长，以便使用小段熔融石英管将多层聚合物流体母板连接在一起，由于没有任何连接器嘴或凸起部分而没有堆积体积的损失。 该方案给出了允许多层聚合物3-D组件（母板）同时能够根据需要控制堆叠内的通道长度的灵活性。 混合室也可以模制成单个硅酮弹性体（或其他材料）层，因为真正的三维性几乎是可能的，而不需要多层叠光刻的复杂性。

公开(公告)号：US20020127822A1

公开(公告)日：2002-09-12

申请号：US10083712

申请日：2002-02-25

Inventor： Katsumichi Ueyanagi ,  Mitsuo Sasaki ,  Toshiaki Sakai

IPC: H01L021/30 ,  H01L021/46 ,  H01L027/01

CPC classification number: B81B3/001 ,  B81C2201/0108 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/31111 ,  H01L21/76251

Abstract: A high-concentration impurity region is formed on all or a part of a surface of an Si forming the third layer, an oxide film (SiO2) forming the second layer is formed on the entire surface of the third layer, the third layer and an Si substrate forming the first layer are bonded together, and the Si forming the third layer is mirror-polished to manufacture an SOI wafer. A resist is then patterned on the SOI wafer, grooves and holes for specifying the contour of the structure are formed in the Si forming the third layer, and the oxide film SiO2 forming the second layer opposed to the formed detecting structure is removed. At the same time, an uneveness of about 0.01 to 0.5 nullm is formed on the surface of the third layer, on which the high-concentration impurity region is formed. The unevenness reduces the contact area between the third layer and the first layer, and reduces the adhering power of the third layer toward the first layer, which is generated by a surface tension 300 of liquid, to surely prevent a sticking phenomenon.

Abstract translation: 在形成第三层的Si的表面的全部或一部分上形成高浓度杂质区，在第三层，第三层和第三层的整个表面上形成形成第二层的氧化物膜（SiO 2） 形成第一层的Si衬底接合在一起，并且形成第三层的Si被镜面抛光以制造SOI晶片。 然后在SOI晶片上图案化抗蚀剂，在形成第三层的Si中形成用于指定结构轮廓的凹槽和孔，并且去除形成与形成的检测结构相对的第二层的氧化物膜SiO 2。 同时，在形成高浓度杂质区域的第三层的表面上形成约0.01至0.5μm的不平整度。 不均匀性降低了第三层与第一层之间的接触面积，并且降低了由液体的表面张力300产生的第三层朝向第一层的粘附力，以确保防止粘附现象。

公开(公告)号：US20240124300A1

公开(公告)日：2024-04-18

申请号：US18397930

申请日：2023-12-27

Applicant: STMicroelectronics, Inc.

Inventor： Jefferson Sismundo TALLEDO

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00309 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0108 ,  B81C2201/0143 ,  B81C2201/0146

Abstract: A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.

公开(公告)号：US09862595B2

公开(公告)日：2018-01-09

申请号：US15023057

申请日：2014-12-04

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Errong Jing

IPC: H01L21/30 ,  H01L21/46 ,  B81C1/00

CPC classification number: B81C1/00142 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/013

Abstract: A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.

公开(公告)号：US09656860B2

公开(公告)日：2017-05-23

申请号：US15254828

申请日：2016-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

公开(公告)号：US20170129767A1

公开(公告)日：2017-05-11

申请号：US15411957

申请日：2017-01-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Tsai-Hao HUNG ,  Shih-Chi KUO ,  Tsung-Hsien LEE ,  Tao-Cheng LIU

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81B1/004 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/012 ,  B81C1/00087 ,  B81C1/00619 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2203/0118

Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

公开(公告)号：US20160368765A1

公开(公告)日：2016-12-22

申请号：US15254828

申请日：2016-09-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Earl Vedere Atnip ,  Raul Enrique Barreto ,  Kelly J. Taylor

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0072 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00365 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/0167 ,  B81C2201/0178

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract translation: 在所描述的示例中，通过在衬底上形成牺牲层并在牺牲层上形成第一金属层来形成MEMS器件。 随后，将第一金属层暴露于氧化环境中，氧化暴露于氧化环境的第一金属层的表面层，以形成第一金属层的天然氧化物层。 随后在第一金属层的自然氧化物层上形成第二金属层。 随后去除牺牲层，形成释放的金属结构。

公开(公告)号：US20160280536A1

公开(公告)日：2016-09-29

申请号：US14777778

申请日：2014-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kippei SUGITA ,  Hiroyuki HASHIMOTO

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81C2201/0104 ,  B81C2201/0108 ,  B81C2201/0132 ,  B82Y40/00

Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

Abstract translation: 通过制备下部结构制造中空结构，该下部结构包括凹部，通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部，除去不需要的部分 牺牲膜，在牺牲膜上形成上部结构，去除不需要的部分，并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

公开(公告)号：US20160221823A1

公开(公告)日：2016-08-04

申请号：US15024942

申请日：2014-09-15

Applicant: CAVENDISH KINETICS, INC

Inventor： Mickael RENAULT

IPC: B81C1/00

CPC classification number: B81C1/0038 ,  B81C1/00801 ,  B81C2201/0108 ,  B81C2201/0176 ,  B81C2201/053

Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时，牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层，以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间，介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性，在沉积其上的电介质层之前，将富硅氧化硅层沉积到牺牲材料上。