Micro electro-mechanical system with one or more moving parts method and apparatus
    91.
    发明申请
    Micro electro-mechanical system with one or more moving parts method and apparatus 失效
    具有一个或多个移动部件的微机电系统方法和装置

    公开(公告)号:US20030210116A1

    公开(公告)日:2003-11-13

    申请号:US10156780

    申请日:2002-05-08

    Applicant: Motorola, Inc.

    Abstract: A meso-scale MEMS device having a movable member (51) is formed using standard printed wiring board and high density interconnect technologies and practices. In one embodiment, sacrificial material disposed about the movable member (51) is removed through openings (101, 102) as formed through a cover (91) to form a cavity (121) that retains and limits the freedom of movement of the movable member (51). The movable member can support a reflective surface (224) to thereby provide a mechanism that will support a projection display and/or image scanner (such as a bar code scanner).

    Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有可移动部件(51)的中尺度MEMS器件。 在一个实施例中,围绕可移动构件(51)设置的牺牲材料通过通过盖(91)形成的开口(101,102)去除以形成空腔(121),其保持并限制可移动构件 (51)。 可移动构件可以支撑反射表面(224),从而提供将支撑投影显示和/或图像扫描器(例如条形码扫描器)的机构。

    Three-dimensional polymer nano/micro molding by sacrificial layer technique
    92.
    发明申请
    Three-dimensional polymer nano/micro molding by sacrificial layer technique 审中-公开
    通过牺牲层技术的三维聚合物纳米/微型成型

    公开(公告)号:US20030087198A1

    公开(公告)日:2003-05-08

    申请号:US10246610

    申请日:2002-09-18

    CPC classification number: B81C1/00119 B81B2201/058 B81C2201/0108

    Abstract: A procedure is presented herein for formation of NEMS/MEMS components and systems with direct arbitrary three-dimensionality for the first time in NEMS/MEMS fabrication. This method leads also to a simple and effective external nullquick-connectionnull interconnect scheme where ordinary fused silica tubes may be press-fitted into the surface opening of this system to withstand high pressure. This method may be extended for connection of multiple levels of polymer fluidic motherboards together using small sections of fused silica tubing, with no loss of stacking volume because of the lack of any connector lips or bosses. This scheme gives the flexibility of allowing multiple stacks of polymeric 3-D components (motherboards) while being able to control the channel lengths within the stacks as desired. Mixing chambers can also be molded in a single silicone elastomer (or other material) layer, because true three-dimensionality is trivially possible without the complexity of multi stacked lithography.

    Abstract translation: 本文介绍了在NEMS / MEMS制造中首次形成具有直接任意三维的NEMS / MEMS部件和系统的程序。 这种方法还引入了一种简单有效的外部“快速连接”互连方案,其中普通的熔融石英管可以压配合到该系统的表面开口中以承受高压。 这种方法可以延长,以便使用小段熔融石英管将多层聚合物流体母板连接在一起,由于没有任何连接器嘴或凸起部分而没有堆积体积的损失。 该方案给出了允许多层聚合物3-D组件(母板)同时能够根据需要控制堆叠内的通道长度的灵活性。 混合室也可以模制成单个硅酮弹性体(或其他材料)层,因为真正的三维性几乎是可能的,而不需要多层叠光刻的复杂性。

    Semiconductor device and method of manufacturing the same
    93.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号:US20020127822A1

    公开(公告)日:2002-09-12

    申请号:US10083712

    申请日:2002-02-25

    Abstract: A high-concentration impurity region is formed on all or a part of a surface of an Si forming the third layer, an oxide film (SiO2) forming the second layer is formed on the entire surface of the third layer, the third layer and an Si substrate forming the first layer are bonded together, and the Si forming the third layer is mirror-polished to manufacture an SOI wafer. A resist is then patterned on the SOI wafer, grooves and holes for specifying the contour of the structure are formed in the Si forming the third layer, and the oxide film SiO2 forming the second layer opposed to the formed detecting structure is removed. At the same time, an uneveness of about 0.01 to 0.5 nullm is formed on the surface of the third layer, on which the high-concentration impurity region is formed. The unevenness reduces the contact area between the third layer and the first layer, and reduces the adhering power of the third layer toward the first layer, which is generated by a surface tension 300 of liquid, to surely prevent a sticking phenomenon.

    Abstract translation: 在形成第三层的Si的表面的全部或一部分上形成高浓度杂质区,在第三层,第三层和第三层的整个表面上形成形成第二层的氧化物膜(SiO 2) 形成第一层的Si衬底接合在一起,并且形成第三层的Si被镜面抛光以制造SOI晶片。 然后在SOI晶片上图案化抗蚀剂,在形成第三层的Si中形成用于指定结构轮廓的凹槽和孔,并且去除形成与形成的检测结构相对的第二层的氧化物膜SiO 2。 同时,在形成高浓度杂质区域的第三层的表面上形成约0.01至0.5μm的不平整度。 不均匀性降低了第三层与第一层之间的接触面积,并且降低了由液体的表面张力300产生的第三层朝向第一层的粘附力,以确保防止粘附现象。

    Method for manufacturing thin-film support beam

    公开(公告)号:US09862595B2

    公开(公告)日:2018-01-09

    申请号:US15023057

    申请日:2014-12-04

    Inventor: Errong Jing

    Abstract: A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.

    Method for Manufacturing Hollow Structure
    99.
    发明申请
    Method for Manufacturing Hollow Structure 审中-公开
    空心结构制造方法

    公开(公告)号:US20160280536A1

    公开(公告)日:2016-09-29

    申请号:US14777778

    申请日:2014-03-17

    Abstract: A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.

    Abstract translation: 通过制备下部结构制造中空结构,该下部结构包括凹部,通过气相沉积聚合方法在下部结构上沉积由有机膜构成的牺牲膜以用牺牲膜掩埋凹部,除去不需要的部分 牺牲膜,在牺牲膜上形成上部结构,去除不需要的部分,并且通过去除牺牲膜在下部结构和上部结构之间形成气隙。

    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL
    100.
    发明申请
    METHOD FOR ACHIEVING GOOD ADHESION BETWEEN DIELECTRIC AND ORGANIC MATERIAL 有权
    在电介质和有机材料之间实现良好粘合的方法

    公开(公告)号:US20160221823A1

    公开(公告)日:2016-08-04

    申请号:US15024942

    申请日:2014-09-15

    Inventor: Mickael RENAULT

    Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.

    Abstract translation: 本发明一般涉及用于形成MEMS器件的方法和通过该方法形成的MEMS器件。 当形成MEMS器件时,牺牲材料沉积在腔体内的开关元件周围。 牺牲材料最终被去除以释放空腔中的开关元件。 开关元件在其上具有薄的电介质层,以防止蚀刻剂与开关元件的导电材料的相互作用。 在制造期间,介电层沉积在牺牲材料上。 为了确保电介质层和牺牲材料之间的良好粘合性,在沉积其上的电介质层之前,将富硅氧化硅层沉积到牺牲材料上。

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