Abstract:
A meso-scale MEMS device having a movable member (51) is formed using standard printed wiring board and high density interconnect technologies and practices. In one embodiment, sacrificial material disposed about the movable member (51) is removed through openings (101, 102) as formed through a cover (91) to form a cavity (121) that retains and limits the freedom of movement of the movable member (51). The movable member can support a reflective surface (224) to thereby provide a mechanism that will support a projection display and/or image scanner (such as a bar code scanner).
Abstract:
A procedure is presented herein for formation of NEMS/MEMS components and systems with direct arbitrary three-dimensionality for the first time in NEMS/MEMS fabrication. This method leads also to a simple and effective external nullquick-connectionnull interconnect scheme where ordinary fused silica tubes may be press-fitted into the surface opening of this system to withstand high pressure. This method may be extended for connection of multiple levels of polymer fluidic motherboards together using small sections of fused silica tubing, with no loss of stacking volume because of the lack of any connector lips or bosses. This scheme gives the flexibility of allowing multiple stacks of polymeric 3-D components (motherboards) while being able to control the channel lengths within the stacks as desired. Mixing chambers can also be molded in a single silicone elastomer (or other material) layer, because true three-dimensionality is trivially possible without the complexity of multi stacked lithography.
Abstract:
A high-concentration impurity region is formed on all or a part of a surface of an Si forming the third layer, an oxide film (SiO2) forming the second layer is formed on the entire surface of the third layer, the third layer and an Si substrate forming the first layer are bonded together, and the Si forming the third layer is mirror-polished to manufacture an SOI wafer. A resist is then patterned on the SOI wafer, grooves and holes for specifying the contour of the structure are formed in the Si forming the third layer, and the oxide film SiO2 forming the second layer opposed to the formed detecting structure is removed. At the same time, an uneveness of about 0.01 to 0.5 nullm is formed on the surface of the third layer, on which the high-concentration impurity region is formed. The unevenness reduces the contact area between the third layer and the first layer, and reduces the adhering power of the third layer toward the first layer, which is generated by a surface tension 300 of liquid, to surely prevent a sticking phenomenon.
Abstract:
A semiconductor package that contains an application-specific integrated circuit (ASIC) die and a micro-electromechanical system (MEMS) die. The MEMS die and the ASIC die are coupled to a substrate that includes an opening that extends through the substrate and is in fluid communication with an air cavity positioned between and separating the MEMS die from the substrate. The opening exposes the air cavity to an external environment and, following this, the air cavity exposes a MEMS element of the MEMS die to the external environment. The air cavity separating the MEMS die from the substrate is formed with a method of manufacturing that utilizes a thermally decomposable die attach material.
Abstract:
A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.
Abstract:
In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract:
The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.
Abstract:
In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.
Abstract:
A hollow structure is manufactured by preparing a lower structure which includes a concave portion, depositing a sacrifice film composed of an organic film on the lower structure by a vapor deposition polymerization method to bury the concave portion with the sacrifice film, removing an unnecessary portion of the sacrifice film, forming an upper structure on the sacrifice film with the unnecessary portion removed, and forming an air gap between the lower structure and the upper structure by removing the sacrifice film.
Abstract:
The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.