Abstract:
An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at least an inner surface of the through hole 222 of the member 220 having a through hole and being capable of forming a beam geometry is coated with a thermal spraying film, unwanted deposition of the ion species on the inner surface of the through hole 222 is inhibited. Moreover, since a deposition film generated on the surface of the thermal spraying film has an unoriented poly-crystalline structure that exhibits extremely higher inter-layer adhesiveness, a failure of the processing object caused by a scattering of the particles peeled-off from the deposition layer is prevented.
Abstract:
An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.
Abstract:
An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.
Abstract:
A particle optical apparatus including an aperture plate for shaping a particle beam before the particle beam enters a monochromator filter assembly. The aperture plate has at least one aperture and is adjustable with respect to the monochromator filter assembly, in normal operating conditions, so that the size of the aperture used to shape the particle beam can be varied, and therefore the beam current entering the filter assembly can be varied.
Abstract:
A combined aperture, aperture holder, vacuum feed through and beam blanker for a beam of charged particles fits into an existing aperture in a charged particle beam device such as a scanning electron microscope or an ion beam chamber.
Abstract:
In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
Abstract:
In an analyzing chamber for a mass analyzer, a body of the analyzing chamber may include an inlet through which an ion beam enters and an outlet through which the ion beam leaves. A shielding section may be installed on a sidewall. The shielding section may prevent the ion beam traveling along a path in the body from causing damage to the sidewall of the body. A detector may be interposed between the sidewall of the body and the shielding section. The detector may detect an ion beam leaking through the shielding section. Accordingly, damage to the sidewall of the body may be sufficiently reduced and/or prevented.
Abstract:
A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.
Abstract:
A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.
Abstract:
The invention describes a particle source in which energy selection occurs. The energy selection occurs by sending a beam of electrically charged particles 13 eccentrically through a lens 6. As a result of this, energy dispersion will occur in an image 15 formed by the lens 6. By projecting this image 15 onto a diaphragm 7, it is possible to only allow particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam 16 will have a reduced energy spread. By adding a deflection unit 10, this particle beam 16 can be deflected toward the optical axis 2. One can also elect to deflect a beam 12 going through the middle of the lens 6—and having, for example, greater current—toward the optical axis.