Ion implanting apparatus
    91.
    发明申请
    Ion implanting apparatus 有权
    离子注入装置

    公开(公告)号:US20080073585A1

    公开(公告)日:2008-03-27

    申请号:US11702677

    申请日:2007-02-06

    CPC classification number: H01J37/3171 H01J37/09 H01J2237/022 H01J2237/045

    Abstract: An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at least an inner surface of the through hole 222 of the member 220 having a through hole and being capable of forming a beam geometry is coated with a thermal spraying film, unwanted deposition of the ion species on the inner surface of the through hole 222 is inhibited. Moreover, since a deposition film generated on the surface of the thermal spraying film has an unoriented poly-crystalline structure that exhibits extremely higher inter-layer adhesiveness, a failure of the processing object caused by a scattering of the particles peeled-off from the deposition layer is prevented.

    Abstract translation: 提供了一种离子注入装置,其防止由形成离子束的束几何形状的构件的通孔的内表面上的离子物质的沉积颗粒的散射引起的加工对象的故障。 由于具有通孔并且能够形成光束几何形状的构件220的通孔222的至少内表面涂覆有热喷涂膜,所以不希望的沉积在通孔222的内表面上 被抑制。 此外,由于在热喷涂膜的表面上产生的沉积膜具有显示出非常高的层间粘附性的未取向的多晶体结构,所以由于从沉积物剥离的颗粒的飞散引起的加工对象的故障 防止了层。

    Terminal structure of an ion implanter
    92.
    发明申请
    Terminal structure of an ion implanter 有权
    离子注入机的端子结构

    公开(公告)号:US20080073578A1

    公开(公告)日:2008-03-27

    申请号:US11527842

    申请日:2006-09-27

    Abstract: An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.

    Abstract translation: 一种装置包括导电结构和布置在导电结构的外部附近的绝缘导体,以修改围绕导电结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75千伏(kV)/英寸的导体周围。 还提供了离子注入机。 离子注入机包括被配置为提供离子束的离子源,限定空腔的端子结构,至少部分地设置在空腔内的离子源和绝缘导体。 绝缘导体设置在端子结构的外部附近以修改围绕端子结构的电场。 绝缘导体具有介于绝缘体上的介电强度大于75kV /英寸的导体周围。

    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
    93.
    发明授权
    Particle-optical systems and arrangements and particle-optical components for such systems and arrangements 有权
    用于这种系统和布置的粒子 - 光学系统和布置以及粒子 - 光学部件

    公开(公告)号:US07244949B2

    公开(公告)日:2007-07-17

    申请号:US11366533

    申请日:2006-03-03

    Abstract: An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.

    Abstract translation: 电子 - 光学装置提供用于一次电子束的主光束路径和二次电子的次级光束路径。 电子 - 光学装置包括具有第一,第二和第三磁场区域的磁体装置。 第一磁场区域被主光束路径和次光束路径穿过。 第二磁场区域被布置在第一磁场区域的上游的主光束路径中,并且不被辅助光束路径穿过。 第一和第二磁场区域以基本上相反的方向偏转主光束路径。 第三磁场区域布置在第二磁场区域的下游的次级光束路径中,并且不被第一光束路径穿过。 第一和第三磁场区域以基本上相同的方向偏转次级光束路径。

    Particle optical apparatus
    94.
    发明申请
    Particle optical apparatus 审中-公开
    粒子光学仪器

    公开(公告)号:US20070138403A1

    公开(公告)日:2007-06-21

    申请号:US10569963

    申请日:2004-08-02

    Abstract: A particle optical apparatus including an aperture plate for shaping a particle beam before the particle beam enters a monochromator filter assembly. The aperture plate has at least one aperture and is adjustable with respect to the monochromator filter assembly, in normal operating conditions, so that the size of the aperture used to shape the particle beam can be varied, and therefore the beam current entering the filter assembly can be varied.

    Abstract translation: 一种粒子光学装置,包括用于在粒子束进入单色器过滤器组件之前成形粒子束的孔板。 孔板具有至少一个孔,并且在正常操作条件下可相对于单色仪滤光器组件可调节,使得用于成形粒子束的孔的尺寸可以改变,因此射入电流进入过滤组件 可以变化。

    Combined aperture holder, beam blanker and vacuum feed through for electron beam, ion beam charged particle devices
    95.
    发明申请
    Combined aperture holder, beam blanker and vacuum feed through for electron beam, ion beam charged particle devices 审中-公开
    组合式光阑支架,光束消隐器和真空馈电用于电子束,离子束带电粒子装置

    公开(公告)号:US20070069149A1

    公开(公告)日:2007-03-29

    申请号:US11238570

    申请日:2005-09-29

    Applicant: Earl Weltmer

    Inventor: Earl Weltmer

    CPC classification number: H01J37/045 H01J37/09

    Abstract: A combined aperture, aperture holder, vacuum feed through and beam blanker for a beam of charged particles fits into an existing aperture in a charged particle beam device such as a scanning electron microscope or an ion beam chamber.

    Abstract translation: 用于带电粒子束的组合孔,孔保持器,真空进料通道和束消除器装配到带电粒子束装置(例如扫描电子显微镜或离子束室)中的现有孔中。

    Focused ion beam apparatus and aperture
    96.
    发明授权
    Focused ion beam apparatus and aperture 有权
    聚焦离子束装置和孔径

    公开(公告)号:US07189982B2

    公开(公告)日:2007-03-13

    申请号:US11205086

    申请日:2005-08-17

    Abstract: In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

    Abstract translation: 在用于其表面涂覆有液态金属的离子束光学系统的孔中,防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器,凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属,液态金属用于液体金属离子源。 优选地,孔径可以在孔径入口孔内表面的面积中最小化,孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

    Particulate prevention in ion implantation

    公开(公告)号:US20060284116A1

    公开(公告)日:2006-12-21

    申请号:US11445667

    申请日:2006-06-02

    Abstract: A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

    Particle source with selectable beam current and energy spread
    100.
    发明申请
    Particle source with selectable beam current and energy spread 有权
    粒子源可选择束流和能量传播

    公开(公告)号:US20050178982A1

    公开(公告)日:2005-08-18

    申请号:US11058695

    申请日:2005-02-15

    CPC classification number: H01J37/05 H01J37/09 H01J37/153 H01J37/26

    Abstract: The invention describes a particle source in which energy selection occurs. The energy selection occurs by sending a beam of electrically charged particles 13 eccentrically through a lens 6. As a result of this, energy dispersion will occur in an image 15 formed by the lens 6. By projecting this image 15 onto a diaphragm 7, it is possible to only allow particles in a limited portion of the energy spectrum to pass. Consequently, the passed beam 16 will have a reduced energy spread. By adding a deflection unit 10, this particle beam 16 can be deflected toward the optical axis 2. One can also elect to deflect a beam 12 going through the middle of the lens 6—and having, for example, greater current—toward the optical axis.

    Abstract translation: 本发明描述了发生能量选择的粒子源。 通过透镜6偏心地发送带电粒子13的光束来进行能量选择。其结果是,由透镜6形成的图像15中会发生能量分散。通过将该图像15投影到膜片7上, 可能只允许能谱范围的有限部分的粒子通过。 因此,通过的光束16将具有减小的能量扩展。 通过添加偏转单元10,该粒子束16可以朝向光轴2偏转。还可以选择使穿过透镜6的中部的光束12偏转并具有例如更大的电流朝向光学 轴。

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