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公开(公告)号：US5295395A
公开(公告)日：1994-03-22
申请号：US652148
申请日：1991-02-07
Applicant: G. Benjamin Hocker , David W. Burns , Akintunde I. Akinwande , Robert D. Horning , Amir R. Mirza , Thomas G. Stratton , Deidrich J. Saathoff , James K. Carney , Scott A. McPherson
Inventor： G. Benjamin Hocker , David W. Burns , Akintunde I. Akinwande , Robert D. Horning , Amir R. Mirza , Thomas G. Stratton , Deidrich J. Saathoff , James K. Carney , Scott A. McPherson
IPC: G01L9/04 , B81C1/00 , G01L9/00 , G01L9/12 , H01L21/02 , H01L21/20 , H01L21/306 , H01L29/84 , G01L13/02
CPC classification number: B81C1/00182 , G01L9/0042 , G01L9/0073 , H01L21/2007 , B81B2201/0292 , B81B2203/0127
Abstract: The formation of diaphragms by silicon wafer bonding provides for a structure having at least two such diaphragms with cavities in the wafers to which the diaphragm layer is bonded. Passageways through the wafers provide for communication of a fluid to the diaphragms. In some locations less than all of a plurality of diaphragms may be bonded to only one wafter having a cavity adjacent the diaphragm.
Abstract translation: 通过硅晶片接合形成隔膜提供了具有至少两个这样的隔膜的结构，其中隔膜层与晶片层结合在晶片上。 通过晶片的通道提供流体到膜片的连通。 在一些位置中，少于所有多个隔膜的位置可以仅结合到具有与隔膜相邻的空腔的一个凹部。
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公开(公告)号：US20240015447A1
公开(公告)日：2024-01-11
申请号：US18371488
申请日：2023-09-22
Applicant: InvenSense, Inc.
Inventor： Roberto Brioschi , Kazunori Hayata , Jr-Cheng Yeh , Dinesh Kumar Solanki
CPC classification number: H04R19/04 , B81B7/0064 , B81C1/00333 , H04R1/04 , H04R3/00 , B81B2201/0257 , H04R2201/003 , B81B2201/0292 , B81B2201/0271 , B81B2203/0127 , B81B2207/015 , B81C2203/0109 , B81B2201/0264
Abstract: A MEMS sensor includes a through hole to allow communication with an external environment, such as to send or receive acoustic signals or to be exposed to the ambient environment. In addition to the information that is being measured, light energy may also enter the environment of the sensor via the through hole, causing short-term or long-term effects on measurements or system components. A light mitigating structure is formed on or attached to a lid of the MEMS die to absorb or selectively reflect the received light in a manner that limits effects on the measurements or interest and system components.
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公开(公告)号：US20230304879A1
公开(公告)日：2023-09-28
申请号：US17702596
申请日：2022-03-23
Applicant: General Electric Company
Inventor： Robert James MacDonald , Yizhen Lin , Nicholas G. Yost , David Richard Esler
CPC classification number: G01L5/173 , B81B7/0019 , B81C1/00817 , B81B2201/0292 , B81C2203/033
Abstract: A sensing element having improved temperature and pressure characteristics including at least one acoustic sensing device formed mainly from a silicon substrate and having a microelectromechanical system without the use of quartz or polymer, wherein the at least one acoustic sensing device detects a torque associated with a metal object subject to said torque, and a high temperature bonding surface for directly connecting the sensing element to the metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing, without the need for a polymer adhesive. Related sensors using such sensing elements and methods are also disclosed herein.
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公开(公告)号：US11733060B2
公开(公告)日：2023-08-22
申请号：US17171283
申请日：2021-02-09
Applicant: Infineon Technologies AG
Inventor： Dan-Ioan-Dumitru Stoica , Constantin Crisu , Victor Popescu-Stroe , Bernhard Winkler
CPC classification number: G01D3/08 , B81B3/0018 , G01D5/241 , G01D5/24466 , G01L27/007 , B81B2201/0292
Abstract: A capacitive sensor includes a first conductive structure; a second conductive structure movable relative to the first conductive structure in response to an external force acting thereon, wherein the first and the second conductive structures form a first capacitor having a first capacitance that changes with a change in a distance between the first conductive structure and second conductive structure, wherein the first capacitance is representative of the external force; and a diagnostic circuit configured to detect a first leakage current in the capacitive sensor by measuring an first electrical parameter that is affected by the first leakage current and comparing the measured first electrical parameter to a first predetermined error threshold, wherein the diagnostic circuit is further configured to generate a first error signal in response to the measured first electrical parameter being greater than the first predetermined error threshold.
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公开(公告)号：US20180299335A1
公开(公告)日：2018-10-18
申请号：US15753147
申请日：2016-07-08
Inventor： Man WONG , Kevin CHAU
CPC classification number: G01L1/18 , B81B7/02 , B81B2201/0292 , B81B2203/0109 , B81B2203/0118 , B81B2203/0315 , B81C1/00547 , B81C2201/0132 , B81C2201/0133 , B81C2201/0176 , G01B7/18 , G01B7/20 , G01L1/26
Abstract: The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.
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Patent Agency Ranking
公开(公告)号：US20180297837A1
公开(公告)日：2018-10-18
申请号：US15937352
申请日：2018-03-27
Applicant: Robert Bosch GmbH
Inventor： Michael Curcic , Oliver Willers , Sven Zinober , Ulrich Kunz
CPC classification number: B81B7/02 , B81B7/0012 , B81B2201/0292 , B81B2201/047 , B81C1/00698 , G02B5/02 , G02B5/208 , G02B5/22 , G02B26/0833
Abstract: A method for protecting a MEMS unit, in particular a MEMS sensor, against infrared investigations, at least one area of the MEMS unit being doped, the at least one doped area absorbing, reflecting or diffusely scattering more than 50%, in particular more than 90%, of an infrared light incident upon it.
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公开(公告)号：US20180072569A1
公开(公告)日：2018-03-15
申请号：US15264846
申请日：2016-09-14
Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Inventor： Stephen A. Berggren
IPC: B81C1/00
CPC classification number: B81C1/0088 , B81B7/02 , B81B2201/0292 , B81C1/00825 , B81C1/00865 , B81C1/00888 , B81C1/00904 , B81C99/0045 , B81C2201/056 , G01L1/00 , H01L41/0926 , H01L41/094 , H01L41/1136
Abstract: A method of strain gauge fabrication is presented herein. The method includes: providing a first substrate having a cavity side; providing a second substrate having a semiconductor side; positioning the second substrate in relation to the first substrate such that the semiconductor side and the cavity side are contactable; processing the second substrate such that the first and second substrates are substantially joined via the semiconductor side and the cavity side; and etching the second substrate to define a strain gauge cantilevered over the cavity side of the first substrate.
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公开(公告)号：US20180002162A1
公开(公告)日：2018-01-04
申请号：US15620619
申请日：2017-06-12
Applicant: InvenSense, Inc.
Inventor： Matthew Thompson , Joseph Seeger
IPC: B81B3/00
CPC classification number: B81B3/0086 , B81B7/02 , B81B2201/014 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2201/036 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81B2207/012 , B81C2203/0792 , H01H1/0036
Abstract: A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).
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公开(公告)号：US20170355598A1
公开(公告)日：2017-12-14
申请号：US15671647
申请日：2017-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou , Chih-Jen Chan , Chia-Shiung Tsai , Ru-Liang Lee , Yuan-Chih Hsieh
CPC classification number: B81C1/00595 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0109 , B81C1/00357 , B81C1/00801 , B81C2201/0132
Abstract: An integrated circuit (IC) device is provided. The IC device includes a first die including a first substrate and a second die including a second substrate. A plasma-reflecting layer is included on an upper surface of the first die. The plasma-reflecting layer is configured to reflect a plasma therefrom. The second substrate is bonded to the first die so as to form a cavity, wherein a lower surface of the cavity is lined by the plasma-reflecting layer. A dielectric protection layer is present on a lower surface of the second die and lines the upper surface of the cavity. A material of the second substrate has a first etch rate for the plasma and a material of the dielectric protection layer has a second etch rate for the plasma. The second etch rate is less than the first etch rate.
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公开(公告)号：US20170350771A1
公开(公告)日：2017-12-07
申请号：US15171173
申请日：2016-06-02
Applicant: UNEO Inc.
Inventor： Yann-Cherng CHERN , Chih-Sheng HOU
IPC: G01L1/14 , G01L1/16 , G01L1/18 , H02N1/08 , H01L41/113
CPC classification number: G01L1/144 , B81B3/0086 , B81B7/0029 , B81B2201/0292 , G01L1/14 , G01L1/148 , G01L1/16 , G01L1/18 , G06F3/044 , H01L41/0533 , H01L41/1132 , H02N1/08
Abstract: A force sensor having a noise shielding layer is disclosed. For a first embodiment, a top noise shielding layer is configured on a top surface of a force sensor to screen noise signals which are caused by human body's touch or approaching from top of the force sensor. For a second embodiment, a bottom noise shielding layer is configured on a bottom surface of the force sensor to screen noise signals which are caused by human body's touch or approaching from bottom of the force sensor.
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