中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

334 records (took 0.03 seconds)

    METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY
    104.
    发明申请
    METHOD OF MANUFACTURING BASE BODY HAVING MICROSCOPIC HOLE, AND BASE BODY 审中-公开
    具有微孔孔和基体的制备基体的方法

    公开(公告)号：US20140326702A1

    公开(公告)日：2014-11-06

    申请号：US14331957

    申请日：2014-07-15

    Applicant: Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

    Inventor： Osamu NUKAGA ,  Satoshi YAMAMOTO ,  Kazuhito TABATA ,  Masakazu SUGIYAMA

    IPC: B81C1/00 ,  B23K26/00

    CPC classification number: B81C1/00547 ,  B23K26/50 ,  B32B3/266 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0353 ,  B81C1/00507 ,  B81C2201/013 ,  B81C2201/0143 ,  C03C15/00 ,  C03C23/0025 ,  Y10T428/24273

    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

    Abstract translation: 一种制造具有微小孔的基体的方法，包括：通过用具有脉冲持续时间的第一激光的焦点在基体上扫描来形成第一改质区域和第二改质区域中的至少一个 皮秒或更少; 通过用脉冲持续时间为皮秒或更小的第二激光的焦点扫描基体的内部，形成由多个第三改质区域和第四改质区域形成的周期性修饰基团; 获得形成为使得第一改质区域和第二改质区域与改性基团重叠或接触的基体; 并通过蚀刻去除第一改质区和第三改质区而形成微孔。

    HEATING SYSTEM AND METHOD FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS
    105.
    发明申请
    HEATING SYSTEM AND METHOD FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS 审中-公开
    微流体和微生物应用的加热系统和方法

    公开(公告)号：US20140304990A1

    公开(公告)日：2014-10-16

    申请号：US14316487

    申请日：2014-06-26

    Applicant: STMicroelectronics, Inc.

    Inventor： Ming Fang ,  Fuchao Wang

    IPC: B41J2/16

    CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/41 ,  Y10T29/49401 ,  Y10T29/49826

    Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

    Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) WITH THROUGH-SUBSTRATE VIA (TSV) SUBSTRATE PLUG
    106.
    发明申请
    CAPACITIVE MICROMACHINED ULTRASONIC TRANSDUCER (CMUT) WITH THROUGH-SUBSTRATE VIA (TSV) SUBSTRATE PLUG 有权
    具有通过（TSV）基板插入的基板的电容式微机械超声波传感器（CMUT）

    公开(公告)号：US20140239768A1

    公开(公告)日：2014-08-28

    申请号：US13779210

    申请日：2013-02-27

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： PETER B. JOHNSON ,  IRA OAKTREE WYGANT

    IPC: H02N1/00 ,  H04R19/00

    CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

    Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

    Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，其包括单晶材料的第一基板，其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧，以及贯穿基板通孔 TSV）延伸第一基板的整个厚度。 TSV由单晶材料形成，通过单晶材料中的隔离区电隔离，并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上，以在微机电系统（MEMS）腔体上提供可移动膜。 金属层在顶侧基板接触区域上方并且在可移动膜上方，包括顶侧基板接触区域与可动膜的耦合。

Patent Agency Ranking