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    Semiconductor component
    112.
    发明授权
    Semiconductor component 有权
    半导体元件

    公开(公告)号：US09403676B2

    公开(公告)日：2016-08-02

    申请号：US14622075

    申请日：2015-02-13

    Applicant: Elmos Semiconductor AG

    Inventor： Arnd Ten Have

    IPC: B81B7/02 ,  B81C1/00 ,  G01L9/00 ,  B81B3/00 ,  H01L29/49 ,  H01L29/84

    CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

    Abstract: The semiconductor component, in particular for use as a component that is sensitive to mechanical stresses in a micro-electromechanical semiconductor component, for example a pressure or acceleration sensor, is provided with a semiconductor substrate (1,5), in the upper face of which an active region (78a,200) made of a material of a first conductivity type is introduced by ion implantation. A semiconducting channel region having a defined length (L) and width (B) is designed within the active region (78a, 200). In the active region (78a,200), each of the ends of the channel region located in the longitudinal extension is followed by a contacting region (79, 80) made of a semiconductor material of a second conductivity type. The channel region is covered by an ion implantation masking material (81), which comprises transverse edges defining the length (L) of the channel region and longitudinal edges defining the width (B) of the channel region and which comprises an edge recess (201,202) at each of the opposing transverse edges aligned with the longitudinal extension ends of the channel region, the contacting regions (79,80) that adjoin the channel region extending all the way into said edge recess.

    Abstract translation: 特别是作为对微机电半导体部件（例如压力或加速度传感器）中的机械应力敏感的部件的半导体部件设置有半导体基板（1,5），在半导体基板 其中通过离子注入引入由第一导电类型的材料制成的有源区（78a，200）。 具有限定长度（L）和宽度（B）的半导体沟道区被设计在有源区（78a，200）内。 在有源区域（78a，200）中，位于纵向延伸部中的沟道区域的每个端部之后是由第二导电类型的半导体材料制成的接触区域（79,80）。 通道区域被离子注入掩模材料（81）覆盖，该离子注入掩模材料包括限定沟道区域的长度（L）的横向边缘和限定沟道区域的宽度（B）的纵向边缘，并且包括边缘凹槽（201,202 ），在与通道区域的纵向延伸端对准的每个相对的横向边缘处，与通道区域相邻的接触区域（79,80）一直延伸到所述边缘凹部中。

    SENSOR PACKAGE STRUCTURE AND METHOD
    113.
    发明申请
    SENSOR PACKAGE STRUCTURE AND METHOD 审中-公开
    传感器封装结构与方法

    公开(公告)号：US20160207762A1

    公开(公告)日：2016-07-21

    申请号：US14600256

    申请日：2015-01-20

    Applicant: SIGURD MICROELECTRONICS CORP.

    Inventor： CHIH-WEI LU ,  KUAN-TIEN SHEN ,  TSAN-LIEN YEH

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00309 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2203/0154 ,  B81C2203/035

    Abstract: A sensor package structure and method is characterized in connecting a sensor with a circuit substrate in a flip chip bonding method to enhance the structure strength and miniaturize the product; using a no-flow underfill glue to fill the gap between the sensor and the circuit substrate to protect the contacts of the flip chip structure, prevent the performance from being affected by the overflowing encapsulant, and promote the reliability of products. The present invention uses the no-flow underfill glue process to replace the processes of forming a dam and a soft protection layer and thus simplifies the fabrication process and reduces the fabrication cost.

    Abstract translation: 传感器封装结构和方法的特征在于以倒装芯片接合方法将传感器与电路基板连接，以提高结构强度并使产品小型化; 使用无流动底部填充胶填充传感器和电路基板之间的间隙，以保护倒装芯片结构的触点，防止性能受溢出密封剂的影响，并提高产品的可靠性。 本发明使用无流动底部填充胶工艺来代替形成坝和软保护层的工艺，从而简化制造工艺并降低制造成本。

    Junctionless nano-electro-mechanical resonant transistor
    114.
    发明授权
    Junctionless nano-electro-mechanical resonant transistor 有权
    无结合纳米机电谐振晶体管

    公开(公告)号：US09397285B2

    公开(公告)日：2016-07-19

    申请号：US14395626

    申请日：2013-04-19

    Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

    Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

    IPC: H01L41/09 ,  H01L41/113 ,  H01H59/00 ,  B82Y15/00 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

    CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

    Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

    Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

    PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE
    116.
    发明申请
    PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE 审中-公开
    带有定义膜的压力传感器

    公开(公告)号：US20160178467A1

    公开(公告)日：2016-06-23

    申请号：US15040899

    申请日：2016-02-10

    Applicant: Silicon Microstructures, Inc.

    Inventor： Steve Terry ,  Fernando Alfaro ,  Marc Konradt

    IPC: G01L9/00 ,  B81B7/00

    CPC classification number: G01L9/0048 ,  B81B7/0016 ,  B81B7/0029 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  G01L9/0047 ,  G01L9/0051 ,  G01L9/0055 ,  G01L19/0092

    Abstract: Structures and methods of protecting membranes on pressure sensors. One example may provide a pressure sensor having a backside cavity defining a frame and under a membrane formed in a device layer. The sensor may further include a cap joined to the device layer by a bonding layer. A recess for a reference cavity may be formed in one or more of the cap, bonding layer, and membrane or other device layer portion. The recess may have a width that is narrower than a width of the backside cavity in at least one direction. A eutectically bondable metal stack may be provided on a bottom side of the sensor. Conductive traces in the sensor may be formed by implanting and annealing ions. An implanted field shield may be formed to protect the conductive traces that form sense elements. Damage prevention circuitry and a temperature sensing diode may also be provided.

    Abstract translation: 在压力传感器上保护膜的结构和方法。 一个示例可以提供一种压力传感器，该压力传感器具有限定框架的背侧空腔以及在器件层中形成的膜下方。 传感器还可以包括通过粘合层连接到器件层的盖。 用于参考空腔的凹槽可以形成在帽，粘合层，膜或其它器件层部分中的一个或多个中。 所述凹部的宽度可以在至少一个方向上比所述背侧腔的宽度窄。 可以在传感器的底侧设置可共熔的金属叠层。 传感器中的导电迹线可以通过植入和退火离子形成。 可以形成植入场屏蔽以保护形成感测元件的导电迹线。 还可以提供防损伤电路和温度感测二极管。

    MEMS DEVICE AND PROCESS
    117.
    发明申请
    MEMS DEVICE AND PROCESS 有权
    MEMS器件和工艺

    公开(公告)号：US20160167946A1

    公开(公告)日：2016-06-16

    申请号：US14902641

    申请日：2014-06-30

    Applicant: CIRRUS LOGIC INTERNATIONAL SEMICONDUCTOR LIMITED

    Inventor： Colin Robert JENKINS ,  Tsjerk HOEKSTRA ,  Scott CARGILL

    IPC: B81B3/00 ,  H04R19/04

    CPC classification number: B81B3/0072 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04 ,  H04R7/10 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003

    Abstract: The application describes improvements to (MEMS) transducers (100) having a flexible membrane (301) with a membrane electrode (302), especially where the membrane is crystalline or polycrystalline and the membrane electrode is metal or a metal alloy. Such transducers may typically include a back-plate having at least one back-plate layer (304) coupled to a back-plate electrode (303), with a plurality of holes (314) in the back-plate electrode corresponding to a plurality back-plate holes (312) through the back-plate. In embodiments of the invention the membrane electrode has at least one opening (313) in the membrane electrode wherein, at least part of the area of the opening corresponds to the area of at least one back-plate hole, in a direction normal to the membrane, and there is no hole in the flexible membrane at said opening in the membrane electrode. There may be a plurality of such openings. The openings effectively allow a reduction in the amount of membrane electrode material, e.g. metal, that may undergo plastic deformation and permanently deform the membrane. The openings are at least partly aligned with the back-plate holes to minimise any loss of capacitance.

    Abstract translation: 该应用描述了具有具有膜电极（302）的柔性膜（301）的（MEMS）换能器（100）的改进，特别是在膜是结晶或多晶的情况下，膜电极是金属或金属合金。 这样的换能器通常可以包括背板，其具有耦合到背板电极（303）的至少一个背板层（304），背板电极中的多个孔（314）对应于多个背面 通过背板的板孔（312）。 在本发明的实施例中，膜电极在膜电极中具有至少一个开口（313），其中至少一部分开口区域对应于至少一个背板孔的面积，沿垂直于 膜，并且在膜电极的所述开口处的柔性膜中没有孔。 可以有多个这样的开口。 这些开口有效地允许膜电极材料的量的减少，例如， 金属，可能会发生塑性变形并使膜永久变形。 这些开口至少部分地与背板孔对准，以最小化电容的任何损失。

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