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111.发明申请公开(公告)号：US20090169190A1
公开(公告)日：2009-07-02
申请号：US12005862
申请日：2007-12-27
Applicant: Ming Fang , Fuchao Wang
Inventor： Ming Fang , Fuchao Wang
CPC classification number: B81C1/00119 , B41J2/14056 , B41J2/14072 , B41J2/14137 , B41J2/16 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1639 , B81B1/006 , B81B2201/052 , B81B2201/058 , B81C2201/013 , B81C2203/075 , H01L28/20 , Y10T29/41 , Y10T29/49401 , Y10T29/49826
Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.
Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的腔室以及与腔室流体连通的出口，允许流体响应于加热室而离开腔室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。
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112.发明授权公开(公告)号：US12006208B2
公开(公告)日：2024-06-11
申请号：US18304383
申请日：2023-04-21
Inventor： Ting-Jung Chen , Shih-Wei Lin
IPC: B81C1/00
CPC classification number: B81C1/00063 , B81C1/00047 , B81C1/00523 , B81C2201/013
Abstract: A semiconductor oxide plate is formed on a recessed surface in a semiconductor matrix material layer. Comb structures are formed in the semiconductor matrix material layer. The comb structures include a pair of inner comb structures spaced apart by a first semiconductor portion. A second semiconductor portion that laterally surrounds the first semiconductor portion is removed selective to the comb structures using an isotropic etch process. The first semiconductor portion is protected from an etchant of the isotropic etch process by the semiconductor oxide plate, the pair of inner comb structures, and a patterned etch mask layer that covers the comb structures. A movable structure for a MEMS device is formed, which includes a combination of the first portion of the semiconductor matrix material layer and the pair of inner comb structures.
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公开(公告)号：US20240174515A1
公开(公告)日：2024-05-30
申请号：US18318607
申请日：2023-05-16
Applicant: Mesoline Inc.
Inventor： Marnix P. Rebergen , Thomas C.R. Russell , Serhii Mytnyk
CPC classification number: B81C1/00285 , B81B7/0038 , B81B2203/0315 , B81C2201/013 , B81C2203/0145
Abstract: Systems of getters for microelectronic devices and methods for micro-molding the getters are described. The getters comprising non-evaporable getter particles can be formed with a variety of nanoparticles and absorb various gas species to keep the microelectronic devices in desired working conditions. The micro-molded getters can be incorporated into various microelectronic devices.
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公开(公告)号：US20240158224A1
公开(公告)日：2024-05-16
申请号：US18540253
申请日：2023-12-14
Applicant: Infineon Technologies AG
Inventor： Wolfgang Klein , Evangelos Angelopoulos , Stefan Barzen , Marc Fueldner , Stefan Geißler , Matthias Friedrich Herrmann , Ulrich Krumbein , Konstantin Tkachuk , Giordano Tosolini , Juergen Wagner
CPC classification number: B81C1/00158 , B81B3/0021 , B81B7/02 , B81C1/00103 , H04R1/08 , H04R7/02 , H04R7/08 , H04R31/003 , B81B2201/0257 , B81B2203/0127 , B81B2203/0384 , B81C2201/013 , H04R2201/003
Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.
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公开(公告)号：US11953675B2
公开(公告)日：2024-04-09
申请号：US18072227
申请日：2022-11-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuya Sugimoto , Tomofumi Suzuki , Kyosuke Kotani , Yutaka Kuramoto , Daiki Suzuki
CPC classification number: G02B26/0841 , B81B3/0045 , B81C1/00555 , G02B7/1821 , G02B26/105 , H02N1/008 , B81B2201/042 , B81C2201/013 , B81C2201/0174 , B81C2201/0198
Abstract: An optical device includes a support portion a movable unit and a pair of torsion bars disposed on both sides of the movable unit on a first axis. The movable unit includes a main body portion, a ring-shaped portion surrounding the main body portion when viewed from a predetermined direction perpendicular to the first axis, two connection portions connecting the main body portion and the ring-shaped portion to each other, and a rib portion provided to the main body portion. Each of the two connection portions includes two connection regions that are separated from each other by a space and the each of the two connection region connects the main body portion and the ring-shaped portion to each other. The rib portion includes four extending portions radially extending between a center of the main body portion and the four connection regions respectively when viewed from the predetermined direction.
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Patent Agency Ranking
116.发明公开公开(公告)号：US20240043263A1
公开(公告)日：2024-02-08
申请号：US18244479
申请日：2023-09-11
Applicant: STMicroelectronics S.r.l.
Inventor： Luca SEGHIZZI , Nicolo' BONI , Laura OGGIONI , Roberto CARMINATI , Marta CARMINATI
CPC classification number: B81B3/0021 , B81C1/0069 , B81C2201/013 , B81C2201/0156
Abstract: A method for manufacturing an optical microelectromechanical device, includes forming, in a first wafer of semiconductor material having a first surface and a second surface, a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements extending between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. The method continues with forming, in a second wafer, a chamber delimited by a bottom wall having a through opening, and bonding the second wafer to the first surface of the first wafer and bonding a third wafer to the second surface of the first wafer so that the chamber overlies the actuation structure, and the through opening is aligned to the suspended mirror structure, thus forming a device composite wafer. The device composite wafer is diced to form an optical microelectromechanical device.
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公开(公告)号：US20240017988A1
公开(公告)日：2024-01-18
申请号：US18365997
申请日：2023-08-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jhao-Yi Wang , Chin-Yu Ku , Wen-Hsiung Lu , Lung-Kai Mao , Ming-Da Cheng
IPC: B81C1/00 , B81B3/00 , H01L25/065 , H01L25/00
CPC classification number: B81C1/00158 , B81B3/0072 , H01L25/0655 , H01L25/50 , B81B2203/033 , B81C2201/013 , B81B2203/0127
Abstract: A method includes bonding a supporting substrate to a semiconductor substrate of a wafer. A bonding layer is between, and is bonded to both of, the supporting substrate and the semiconductor substrate. A first etching process is performed to etch the supporting substrate and to form an opening, which penetrates through the supporting substrate and stops on the bonding layer. The opening has substantially straight edges. The bonding layer is then etched. A second etching process is performed to extend the opening down into the semiconductor substrate. A bottom portion of the opening is curved.
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公开(公告)号：US11851321B2
公开(公告)日：2023-12-26
申请号：US17188933
申请日：2021-03-01
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ting-Li Yang , Kai-Di Wu , Ming-Da Cheng , Wen-Hsiung Lu , Cheng Jen Lin , Chin Wei Kang
CPC classification number: B81B3/0081 , B81C1/0069 , B81B2203/019 , B81B2203/0127 , B81B2203/0353 , B81B2207/015 , B81C2201/013 , B81C2201/0181 , B81C2203/032 , B81C2203/0735
Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.
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公开(公告)号：US20230345185A1
公开(公告)日：2023-10-26
申请号：US18163865
申请日：2023-02-02
Applicant: DB HiTek Co., Ltd.
Inventor： Seok Young LEE
CPC classification number: H04R19/04 , B81B3/001 , B81C1/00968 , H04R31/006 , H04R31/003 , H04R7/04 , H04R7/18 , H04R19/005 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C2201/0109 , B81C2201/013 , H04R2201/003
Abstract: Provided is a MEMS microphone structure (1) and, more particularly, to a MEMS microphone structure (1) that ensures excellent sensitivity by including and/or forming a lower electrode (410) and an upper electrode (430) with a diaphragm (110) in a bending area (A1) so that the maximum bending displacement of the diaphragm (110) is controlled by a dielectrophoretic (DFP) force together with sound pressure.
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公开(公告)号：US11796396B2
公开(公告)日：2023-10-24
申请号：US17216047
申请日：2021-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsai-Hao Hung , Shih-Chi Kuo
CPC classification number: G01K7/32 , B81B3/0008 , B81C1/00944 , B81B2201/0278 , B81B2203/0136 , B81B2203/04 , B81C2201/013 , B81C2201/0105 , B81C2201/0116
Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.
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