公开(公告)号：US20170365507A1

公开(公告)日：2017-12-21

申请号：US15630597

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Damian Sojka ,  Andre Schmenn ,  Carsten Ahrens

IPC: H01L21/762 ,  H01L23/60 ,  H01L21/764 ,  H02H9/04 ,  H01L27/02 ,  H01L23/00

CPC classification number: H01L21/76289 ,  B81C1/00119 ,  B81C1/00214 ,  B81C1/00404 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/0111 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0135 ,  B81C2201/016 ,  B81C2201/0198 ,  B81C2201/053 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/764 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/0288 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H02H9/046 ,  H03K17/545 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

公开(公告)号：US09718681B2

公开(公告)日：2017-08-01

申请号：US15012314

申请日：2016-02-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H11/00 ,  H01H65/00 ,  B81C1/00 ,  H01H59/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20170057812A1

公开(公告)日：2017-03-02

申请号：US15220234

申请日：2016-07-26

Applicant: GRAPHENEA S.A.

Inventor： M. Amaia ZURUTUZA ELORZA ,  M. Alba CENTENO PEREZ

IPC: B81C1/00

CPC classification number: H01L21/02527 ,  B32B37/025 ,  B32B38/0036 ,  B32B38/10 ,  B81C1/00158 ,  B81C2201/0133 ,  B81C2201/0176 ,  B81C2201/0191 ,  B81C2201/053 ,  C01B32/194 ,  H01L21/02664

Abstract: A method of transferring graphene onto a target substrate having cavities and/or holes or onto a substrate having at least one water soluble layer is disclosed. It comprises the steps of: applying a protective layer (4) onto a sample comprising a stack (20) formed by a graphene monolayer (2) grown on a metal foil or on a metal thin film on a silicon substrate (1); attaching to said protective layer (4) a frame (5) comprising at least one outer border and at least one inner border, said frame (5) comprising a substrate and a thermal release adhesive polymer layer, the frame (5) providing integrity and allowing the handling of said sample; removing or detaching said metal foil or metal thin film on a silicon substrate (1); once the metal foil or metal thin film on a silicon substrate (1) has been removed or detached, drying the sample; depositing the sample onto a substrate (7); removing said frame (5) by cutting through said protective layer (4) at said at least one inner border of the frame (5) or by thermal release.

Abstract translation: 公开了一种将石墨烯转移到具有空穴和/或空穴的目标基底上或具有至少一个水溶性层的基底上的方法。 其包括以下步骤：将保护层（4）施加到包含由在金属箔上生长的石墨烯单层（2）或在硅衬底（1）上的金属薄膜上形成的堆叠（20）的样品上; 附接到所述保护层（4）包括至少一个外边界和至少一个内边界的框架（5），所述框架（5）包括基底和热释放粘合聚合物层，所述框架（5）提供完整性和 允许处理所述样品; 在硅衬底（1）上移除或分离所述金属箔或金属薄膜; 一旦硅衬底（1）上的金属箔或金属薄膜被去除或分离，干燥样品; 将样品沉积到衬底（7）上; 通过在框架（5）的所述至少一个内边界处切割所述保护层（4）或通过热释放来移除所述框架（5）。

公开(公告)号：US09493877B1

公开(公告)日：2016-11-15

申请号：US15144735

申请日：2016-05-02

Applicant: Innovative Micro Technology

Inventor： John Harley ,  Jeffery F. Summers ,  Tao Gilbert

IPC: C23F1/02 ,  C23F4/00 ,  C23F1/12 ,  H01J37/32 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  B81C1/00 ,  G03F7/004

CPC classification number: C23F1/02 ,  B81C1/00531 ,  B81C1/00539 ,  B81C2201/0132 ,  B81C2201/0133 ,  C23F1/16 ,  C23F1/38 ,  C23F1/44 ,  C23F4/00 ,  G03F7/0041 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02244 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method for creating small features in an Al/Ag/Ti multilayer stack is disclosed. The method uses a combination of wet and dry etching techniques to anisotropically etch the layers.

Abstract translation: 公开了一种用于在Al / Ag / Ti多层叠层中形成小特征的方法。 该方法使用湿式和干式蚀刻技术的组合来各向异性地蚀刻层。

公开(公告)号：US20160308001A1

公开(公告)日：2016-10-20

申请号：US14908930

申请日：2014-07-14

Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung Han YOON ,  Se Yeong LEE

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/3205 ,  H01L21/02 ,  B81C1/00 ,  H01L21/306

CPC classification number: H01L29/0676 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/16

Abstract: Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.

Abstract translation: 提供了一种制造硅纳米线阵列的方法，包括以下步骤：将均匀无规图案彼此分开的塑料颗粒定位在硅衬底上; 在塑料颗粒之间形成催化剂层; 去除塑料颗粒; 垂直蚀刻接触催化剂层的硅衬底的部分; 并除去催化剂层。 本发明提供了一种简单且具有成本效益的方法，能够通过大的表面积处理进行批量生产，甚至能够在具有有限资源的位置制造纳米线，并且能够单独控制纳米线的结构。

公开(公告)号：US20160221819A1

公开(公告)日：2016-08-04

申请号：US14748012

申请日：2015-06-23

Applicant: InvenSense, Inc.

Inventor： Peter SMEYS ,  Jong Il SHIN ,  Jongwoo SHIN

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B2207/012 ,  B81B2207/094 ,  B81C1/00293 ,  B81C2201/013 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/035 ,  B81C2203/0792

Abstract: A MEMS device is disclosed. The MEMS device includes a first substrate. At least one structure is formed within the first substrate. The first substrate includes at least one first conductive pad thereon. The MEMS device also includes a second substrate. The second substrate includes a passivation layer. The passivation layer includes a plurality of layers. A top layer of the plurality of layers comprises an outgassing barrier layer. At least one second conductive pad and at least one electrode are coupled to the top layer. At least one first conductive pad is coupled to the at least one second conductive pad.

Abstract translation: 公开了MEMS器件。 MEMS器件包括第一衬底。 在第一基板内形成至少一个结构。 第一衬底包括至少一个第一导电焊盘。 MEMS装置还包括第二基板。 第二基板包括钝化层。 钝化层包括多个层。 多个层的顶层包括除气阻挡层。 至少一个第二导电焊盘和至少一个电极耦合到顶层。 至少一个第一导电焊盘耦合到所述至少一个第二导电焊盘。

公开(公告)号：US09390936B2

公开(公告)日：2016-07-12

申请号：US14527039

申请日：2014-10-29

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY ,  Stephanie Tombrello

Inventor： Michael D. Henry ,  Andrew P. Homyk ,  Axel Scherer ,  Thomas A. Tombrello ,  Sameer Walavalkar

IPC: G01N1/18 ,  H01L21/308 ,  B81C1/00 ,  H01L21/3065 ,  G01N1/40

CPC classification number: B81C1/00111 ,  B01J19/0046 ,  B01J2219/00504 ,  B01J2219/00664 ,  B81B1/006 ,  B81B2203/0361 ,  B81B2207/056 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  G01N1/405 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/3086 ,  Y10T436/25375

Abstract: Methods for fabricating of high aspect ratio probes and deforming micropillars and nanopillars are described. Use of polymers in deforming nanopillars and micropillars is also described.

公开(公告)号：US09287075B2

公开(公告)日：2016-03-15

申请号：US14670671

申请日：2015-03-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H51/22 ,  H01H59/00 ,  H01H11/00 ,  H01H49/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US20160035511A1

公开(公告)日：2016-02-04

申请号：US14883825

申请日：2015-10-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen E. LUCE ,  Anthony K. STAMPER

IPC: H01H11/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

公开(公告)号：US09019049B2

公开(公告)日：2015-04-28

申请号：US13826070

申请日：2013-03-14

Applicant: International Business Machines Corporation

Inventor： Stephen E. Luce ,  Anthony K. Stamper

IPC: H01H51/22 ,  H01H59/00 ,  H01H11/00 ,  H01H1/58

CPC classification number: B81C1/00698 ,  B81C1/0015 ,  B81C1/00166 ,  B81C1/00523 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0145 ,  B81C2201/0154 ,  B81C2203/0145 ,  H01H1/0036 ,  H01H1/58 ,  H01H11/00 ,  H01H49/00 ,  H01H59/00 ,  H01H59/0009 ,  H01H2059/0018 ,  Y10T29/49105

Abstract: MEMS switches and methods of manufacturing MEMS switches is provided. The MEMS switch having at least two cantilevered electrodes having ends which overlap and which are structured and operable to contact one another upon an application of a voltage by at least one fixed electrode.

Abstract translation: 提供MEMS开关和制造MEMS开关的方法。 所述MEMS开关具有至少两个悬臂电极，所述至少两个悬臂电极具有重叠的端部，并且在被至少一个固定电极施加电压时被构造和可操作以彼此接触。