公开(公告)号：US20160273967A1

公开(公告)日：2016-09-22

申请号：US14726472

申请日：2015-05-30

Applicant: Chih-Ming Sun ,  Ming-Han Tsai

Inventor： Chih-Ming Sun ,  Ming-Han Tsai

IPC: G01J5/02 ,  B81B7/02 ,  H04N5/33 ,  G01K7/02

CPC classification number: G01J5/0265 ,  B81B7/0025 ,  B81B7/0061 ,  B81B7/02 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0278 ,  G01J5/0025 ,  G01J5/027 ,  G01J5/04 ,  G01J5/046 ,  G01J5/14 ,  H01L2224/48091 ,  H01L2924/16151 ,  H01L2924/16153 ,  H01L2924/16235 ,  H04N5/2256 ,  H01L2924/00014

Abstract: The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on a part of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.

Abstract translation: 本发明公开了一种具有组合感测能力的可佩戴装置，其包括可穿戴组件和至少一个多功能传感器模块。 可穿戴组件适合佩戴在使用者身体的一部分上。 可穿戴组件包括至少一个透光窗。 多功能传感器模块位于可穿戴组件的内部，用于执行图像感测功能和红外温度感测功能。 多功能传感器模块包括图像传感器模块，用于通过图像感测通过光可透过窗口感测物体的物理或生物学特征; 以及用于通过红外温度感测通过透光窗口感测温度的红外温度传感器模块。

公开(公告)号：US20160207762A1

公开(公告)日：2016-07-21

申请号：US14600256

申请日：2015-01-20

Applicant: SIGURD MICROELECTRONICS CORP.

Inventor： CHIH-WEI LU ,  KUAN-TIEN SHEN ,  TSAN-LIEN YEH

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00309 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2203/0154 ,  B81C2203/035

Abstract: A sensor package structure and method is characterized in connecting a sensor with a circuit substrate in a flip chip bonding method to enhance the structure strength and miniaturize the product; using a no-flow underfill glue to fill the gap between the sensor and the circuit substrate to protect the contacts of the flip chip structure, prevent the performance from being affected by the overflowing encapsulant, and promote the reliability of products. The present invention uses the no-flow underfill glue process to replace the processes of forming a dam and a soft protection layer and thus simplifies the fabrication process and reduces the fabrication cost.

Abstract translation: 传感器封装结构和方法的特征在于以倒装芯片接合方法将传感器与电路基板连接，以提高结构强度并使产品小型化; 使用无流动底部填充胶填充传感器和电路基板之间的间隙，以保护倒装芯片结构的触点，防止性能受溢出密封剂的影响，并提高产品的可靠性。 本发明使用无流动底部填充胶工艺来代替形成坝和软保护层的工艺，从而简化制造工艺并降低制造成本。

公开(公告)号：US09397285B2

公开(公告)日：2016-07-19

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H01L41/09 ,  H01L41/113 ,  H01H59/00 ,  B82Y15/00 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US20140283603A1

公开(公告)日：2014-09-25

申请号：US14355428

申请日：2012-11-02

Applicant: Continental Teves AG & Co. OHG

Inventor： Stefan Günthner ,  Bernhard Schmid

IPC: G01P15/08

CPC classification number: G01P15/0888 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81C1/0023 ,  Y10T29/49002

Abstract: A micromechanical element (123a) having a plurality of individual sensor elements (1′a, 2′a, 3′a, 23a), wherein a first physical measurement variable can be measured with a first individual sensor element (1′a, 2′a, 3′a, 23a) and a second physical measurement variable can be measured with a second individual sensor element (1′a, 2′a, 3′a, 23a). A component is provided having at least one control electronics unit (1′b, 2′b, 3′b) which can be connected electrically to the micromechanical element (123a); wherein the micromechanical element (123a) and the control electronics unit (1′b, 2′b, 3′b) are arranged in a common housing (123c). A method for producing the component is further described.

Abstract translation: 具有多个单独传感器元件（1'a，2'a，3'a，23a）的微机械元件（123a），其中第一物理测量变量可以用第一个别传感器元件（1'a，2 'a，3'a，23a）和第二物理测量变量可以用第二个别传感器元件（1'a，2'a，3'a，23a）测量。 提供具有至少一个能够与微机械元件（123a）电连接的控制电子单元（1'b，2'b，3'b）的组件; 其中所述微机械元件（123a）和所述控制电子单元（1'b，2'b，3'b）布置在公共壳体（123c）中。 进一步描述了用于制造组件的方法。

公开(公告)号：US20140268523A1

公开(公告)日：2014-09-18

申请号：US14207461

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors to reduce form factor, cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了一种穿戴式装置，其具有被配置成检测和测量感兴趣的不同参数的多个传感器。 可佩戴装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 可穿戴设备将待测量的第一参数直接耦合到直接传感器。 相反，可佩戴装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上将其它传感器添加到可穿戴装置中。 这支持集成多个传感器，以减少外形，成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20140191342A1

公开(公告)日：2014-07-10

申请号：US14239877

申请日：2012-08-10

Applicant: Ichiro Ohsaka ,  Kazunori Ohta

Inventor： Ichiro Ohsaka ,  Kazunori Ohta

IPC: B81B3/00

CPC classification number: B81B3/0018 ,  B81B7/0083 ,  B81B2201/0278 ,  B81C1/00238 ,  G01C19/5783 ,  G01P15/0802 ,  G01P21/00

Abstract: There is provided a MEMS sensor including a signal processing LSI equipped with a temperature sensor for measuring temperature of a sensor, and a MEMS sensor chip overlaid on the signal processing LSI, the MEMS sensor chip being mounted on a heat generating part of the signal processing LSI. This MEMS sensor decreases the effects caused by thermally triggered changes in temperature characteristics.

Abstract translation: 提供了一种MEMS传感器，其包括装备有用于测量传感器的温度的温度传感器的信号处理LSI和覆盖在信号处理LSI上的MEMS传感器芯片，MEMS传感器芯片安装在信号处理的发热部分 LSI。 该MEMS传感器降低了由热触发的温度特性变化引起的影响。

公开(公告)号：US20130264610A1

公开(公告)日：2013-10-10

申请号：US13441134

申请日：2012-04-06

Applicant: Tung-Tsun CHEN ,  Chia-Hua CHU ,  Chung-Hsien LIN ,  Jui-Cheng HUANG

Inventor： Tung-Tsun CHEN ,  Chia-Hua CHU ,  Chung-Hsien LIN ,  Jui-Cheng HUANG

IPC: H01L29/66 ,  H01L27/06

CPC classification number: H01L23/34 ,  B81B7/0096 ,  B81B2201/0278 ,  B81C1/0023 ,  H01L23/345 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops.

Abstract translation: 具有温度控制系统的半导体器件。 该装置的实施例可以包括包括具有专用第一温度控制回路的第一加热器和包括具有专用第二温度控制回路的第二加热器的CMOS芯片的MEMS芯片。 每个控制回路可以具有用于控制每个加热器的热输出的专用温度传感器。 第一加热器和传感器靠近MEMS芯片中的MEMS器件设置，用于直接加热MEMS芯片。 MEMS芯片和CMOS芯片的温度可以通过温度控制回路彼此独立控制。

公开(公告)号：US20120235039A1

公开(公告)日：2012-09-20

申请号：US13499179

申请日：2009-09-29

Applicant: Takanori Maeda ,  Kenjiro Fujimoto ,  Takahiro Kawano ,  Atsushi Onoe

Inventor： Takanori Maeda ,  Kenjiro Fujimoto ,  Takahiro Kawano ,  Atsushi Onoe

IPC: G01J5/00

CPC classification number: G01J5/02 ,  B81B3/007 ,  B81B2201/0278 ,  B81B2203/0118 ,  G01J5/024

Abstract: A MEMS sensor has a frame portion 2 formed in a rectangular frame shape and a convexoconcave shaped membrane 3 that is constructed within the frame portion 2, the convexoconcave shape of the membrane 3 extend to two direction where a concave and a convex are orthogonal to each other, and square concave portions 3a and square convex portions 3b are disposed in a web shape within a whole in-plane area of the membrane 3.

Abstract translation: MEMS传感器具有形成为矩形框架形状的框架部分2和构造在框架部分2内的凸凹形状的膜3，膜3的凹凸形状延伸到两个方向，其中凹和凸与每个 其他方形凹部3a和方形凸部3b以膜3的整个面内区域配置成网状。

公开(公告)号：US08021961B2

公开(公告)日：2011-09-20

申请号：US12464426

申请日：2009-05-12

Applicant: Douglas Ray Sparks

Inventor： Douglas Ray Sparks

IPC: H01L21/46 ,  F15C1/06 ,  F15C1/04

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/058 ,  G01F1/8445 ,  H01L24/94 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/16152 ,  H01L2924/3025 ,  Y10T137/2191 ,  Y10T137/2224 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A process for fabricating multiple microfluidic device chips. The process includes fabricating multiple micromachined tubes in a semiconductor device wafer. The tubes are fabricated so that each tube has an internal fluidic passage and an inlet and outlet thereto defined in a surface of the device wafer. The device wafer is then bonded to a glass wafer to form a device wafer stack, and so that through-holes in the glass wafer are individually fluidically coupled with the inlets and outlets of the tubes. The glass wafer is then bonded to a metallic wafer to form a package wafer stack, so that through-holes in the metallic wafer are individually fluidically coupled with the through-holes of the glass wafer. Multiple microfluidic device chips are then singulated from the package wafer stack. Each device chip has a continuous flow path for a fluid therethrough that is preferably free of organic materials.

Abstract translation: 一种用于制造多个微流体装置芯片的方法。 该方法包括在半导体器件晶片中制造多个微加工管。 管被制造成使得每个管具有内部流体通道以及限定在器件晶片的表面中的入口和出口。 然后将器件晶片接合到玻璃晶片以形成器件晶片叠层，并且使得玻璃晶片中的通孔与管的入口和出口分别流体耦合。 然后将玻璃晶片接合到金属晶片以形成封装晶片堆叠，使得金属晶片中的通孔与玻璃晶片的通孔独立地流体耦合。 然后从封装晶片堆叠单个多个微流体器件芯片。 每个装置芯片具有用于流过其中的流体的连续流动路径，其优选不含有机材料。

公开(公告)号：US20090176064A1

公开(公告)日：2009-07-09

申请号：US12225670

申请日：2007-03-28

Applicant: Takayuki Hirano ,  Nobuyuki Kawakami ,  Masato Kannaka

Inventor： Takayuki Hirano ,  Nobuyuki Kawakami ,  Masato Kannaka

IPC: B32B3/10 ,  B05D3/02 ,  B05D5/12 ,  C23C16/513 ,  H01L21/306

CPC classification number: G01F1/692 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81C1/00666 ,  B81C2201/0169 ,  B81C2201/0178 ,  C23C16/402 ,  C23C16/56 ,  Y10T428/24488 ,  Y10T428/24612

Abstract: It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.

Abstract translation: 本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。 该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。 该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。