公开(公告)号：US11114294B2

公开(公告)日：2021-09-07

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C28/04 ,  C23C16/455

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

公开(公告)号：US20240218505A1

公开(公告)日：2024-07-04

申请号：US18396829

申请日：2023-12-27

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Sang Ho Yu ,  Sukanya Datta ,  Chiyu Zhu ,  Jan Willem Maes ,  Saima Ali ,  Elina Färm

IPC: C23C16/42 ,  C23C16/04

CPC classification number: C23C16/42 ,  C23C16/04

Abstract: Methods of forming molybdenum silicide are disclosed. Exemplary methods can include selectively forming molybdenum silicide on a first surface relative to a second surface. Additionally or alternatively, exemplary methods can include a cleaning step prior to forming the molybdenum silicide.

公开(公告)号：US20240096633A1

公开(公告)日：2024-03-21

申请号：US18367500

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita ,  Arpita Saha ,  Eva Tois ,  Marko Tuominen ,  Janne-Petteri Niemelä ,  Patricio Eduardo Romero ,  Chiyu Zhu ,  Glen Wilk ,  Holger Saare ,  YoungChol Byun ,  Jonahtan Bakke

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/28568 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

公开(公告)号：US20230369040A1

公开(公告)日：2023-11-16

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/45553 ,  C23C16/36 ,  H01L21/02274 ,  H01L21/76829 ,  H01L21/0228

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20230215763A1

公开(公告)日：2023-07-06

申请号：US18147038

申请日：2022-12-28

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Moataz Bellah Mousa ,  Dong Li ,  Arul Vigneswar Ravichandran ,  Yasiel Cabrera ,  Salvatore Luiso

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/08 ,  C23C16/56

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/76883 ,  C23C16/0227 ,  C23C16/34 ,  C23C16/08 ,  C23C16/345 ,  C23C16/56

Abstract: Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

公开(公告)号：US20230163028A1

公开(公告)日：2023-05-25

申请号：US18148687

申请日：2022-12-30

Applicant: ASM IP Holding B.V.

Inventor： Salvatore Luiso ,  YoungChol Byun ,  Holger Saare ,  Jaebeom Lee ,  Sukanya Datta ,  Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C16/0236 ,  C23C16/45553 ,  C23C16/06

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US20240401194A1

公开(公告)日：2024-12-05

申请号：US18676023

申请日：2024-05-28

Applicant: ASM IP Holding B.V.

Inventor： Shuaidi Zhang ,  Mustafa Muhammad ,  Moataz Bellah Mousa ,  Paul Ma ,  Jonathan Bakke ,  Todd Robert Dunn ,  Eric James Shero ,  Jereld Lee Winkler ,  YoungChol Byun ,  Shubham Garg ,  Jacqueline Wrench

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.

公开(公告)号：US20230349040A1

公开(公告)日：2023-11-02

申请号：US18141694

申请日：2023-05-01

Applicant: ASM IP Holding B.V.

Inventor： Moataz Bellah Mousa ,  Jiyeon Kim ,  Jaebeom Lee ,  Charith Eranga Nanayakkara ,  Paul Ma ,  Chuandao Wang ,  YoungChol Byun ,  Jacqueline Wrench ,  Guannan Chen

IPC: C23C16/22 ,  C23C16/455 ,  C23C16/04 ,  C23C16/06

CPC classification number: C23C16/22 ,  C23C16/45525 ,  C23C16/045 ,  C23C16/06

Abstract: A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.

公开(公告)号：US20230295795A1

公开(公告)日：2023-09-21

申请号：US18119884

申请日：2023-03-10

Applicant: ASM IP Holding B.V.

Inventor： Yasiel Cabrera ,  YoungChol Byun ,  Arul Vigneswar Ravichandran ,  Salvatore Luiso ,  Sang Ho Yu ,  Moataz Bellah Mousa

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32

CPC classification number: C23C16/045 ,  C23C16/303 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/3321 ,  H01J2237/335

Abstract: Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.

公开(公告)号：US20230126516A1

公开(公告)日：2023-04-27

申请号：US17971860

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Xingye Wang ,  Fu Tang ,  Eric Jen cheng Liu ,  Peijun Jerry Chen ,  YoungChol Byun

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34

Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.