公开(公告)号：US09053890B2

公开(公告)日：2015-06-09

申请号：US13958120

申请日：2013-08-02

Applicant: University Health Network

Inventor： Yonghai Sun ,  Tze-wei Yeow ,  David Anthony Jaffray

IPC: H01J1/304 ,  H01J1/30 ,  H01J9/02 ,  H01J35/06

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J35/065 ,  H01J2201/3043 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496 ,  H01J2235/068 ,  Y10S977/81 ,  Y10S977/811

Abstract: Various embodiments are described herein for nanostructure field emission cathode structures and methods of making these structures. These structures generally comprise an electrode field emitter comprising a resistive layer having a first surface, a connection pad having a first surface disposed adjacent to the first surface of the resistive layer, and a nanostructure element for emitting electrons in use, the nanostructure element being disposed adjacent to a second surface of the connection pad that is opposite the first surface of the connection pad. Some embodiments also include a coaxial gate electrode that is disposed about the nanostructure element.

Abstract translation: 本文描述了用于纳米结构场发射阴极结构和制造这些结构的方法的各种实施例。 这些结构通常包括电极场发射器，其包括具有第一表面的电阻层，具有邻近电阻层的第一表面设置的第一表面的连接焊盘和用于在使用中发射电子的纳米结构元件，所述纳米结构元件被布置 邻近连接垫的与连接垫的第一表面相对的第二表面。 一些实施例还包括围绕纳米结构元件设置的同轴栅电极。

公开(公告)号：US20150035428A1

公开(公告)日：2015-02-05

申请号：US13958120

申请日：2013-08-02

Applicant: Yonghai SUN ,  Tze-wei YEOW ,  David Anthony JAFFRAY

Inventor： Yonghai SUN ,  Tze-wei YEOW ,  David Anthony JAFFRAY

IPC: H01J19/24 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J35/065 ,  H01J2201/3043 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496 ,  H01J2235/068 ,  Y10S977/81 ,  Y10S977/811

Abstract: Various embodiments are described herein for nanostructure field emission cathode structures and methods of making these structures. These structures generally comprise an electrode field emitter comprising a resistive layer having a first surface, a connection pad having a first surface disposed adjacent to the first surface of the resistive layer, and a nanostructure element for emitting electrons in use, the nanostructure element being disposed adjacent to a second surface of the connection pad that is opposite the first surface of the connection pad. Some embodiments also include a coaxial gate electrode that is disposed about the nanostructure element.

Abstract translation: 本文描述了用于纳米结构场发射阴极结构和制造这些结构的方法的各种实施例。 这些结构通常包括电极场发射器，其包括具有第一表面的电阻层，具有邻近电阻层的第一表面设置的第一表面的连接焊盘和用于在使用中发射电子的纳米结构元件，所述纳米结构元件被布置 邻近连接垫的与连接垫的第一表面相对的第二表面。 一些实施例还包括围绕纳米结构元件设置的同轴栅电极。

公开(公告)号：US20090289555A1

公开(公告)日：2009-11-26

申请号：US11478406

申请日：2006-06-28

Applicant: Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

Inventor： Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

IPC: H01J1/14 ,  H05B41/14

CPC classification number: H01J1/14 ,  H01J1/15 ,  H01J1/20 ,  H01J1/304 ,  H01J2201/19 ,  H01J2201/196 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496

Abstract: An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided.

Abstract translation: 示例性的电子发射装置包括电子发射极，与电子发射极相对且间隔开的阳极，第一电源电路和第二电源电路。 第一电源电路被配置为用电源电连接电子发射器和阳极，以在电子发射器和阳极之间产生电场。 第二电源电路被配置为将电子发射器与电源电连接以提供用于加热电子发射器的加热电流，从而电子从其发射。 还提供了用于产生具有相对较高稳定性的发射电流的方法。

公开(公告)号：US11688579B2

公开(公告)日：2023-06-27

申请号：US17549854

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhong-wei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04 ,  H01J37/26

CPC classification number: H01J37/073 ,  H01J1/14 ,  H01J1/304 ,  H01J9/025 ,  H01J9/042 ,  H01J37/065 ,  H01J37/26 ,  H01J2201/196 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30449 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06308 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

公开(公告)号：US11651924B1

公开(公告)日：2023-05-16

申请号：US17846498

申请日：2022-06-22

Applicant: FEI Company

Inventor： Kun Liu ,  Chad Rue ,  Alan Stephen Bahm

IPC: H01J37/073 ,  H01J1/304 ,  H01J1/34 ,  H01J19/24

CPC classification number: H01J1/3044 ,  H01J1/34 ,  H01J19/24 ,  H01J37/073 ,  H01J2201/30415 ,  H01J2201/30449 ,  H01J2237/06341

Abstract: Methods of producing microrods for electron emitters and associated microrods and electron emitters. In one example, a method of producing a microrod for an electron emitter comprises providing a bulk crystal ingot, removing a first plate from the bulk crystal ingot, reducing a thickness of the first plate to produce a second plate, and milling the second plate to produce one or more microrods. In another example, a microrod for an electron emitter comprises a microrod tip region that comprises a nanoneedle that in turn comprises a nanorod and a nanoprotrusion tip. The microrod and the nanoneedle are integrally formed from a bulk crystal ingot by sequentially: (i) removing the microrod from the bulk crystal ingot; (ii) coarse processing the microrod tip region to produce the nanorod; and (iii) fine processing the nanorod to produce the nanoprotrusion tip.

公开(公告)号：US20160108521A1

公开(公告)日：2016-04-21

申请号：US14740359

申请日：2015-06-16

Applicant: Tsinghua University

Inventor： Huaqiang WU ,  Shuoguo YUAN ,  Han LI ,  He QIAN

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/22 ,  H01J1/304

CPC classification number: H01J1/304 ,  C23C16/305 ,  C23C16/4488 ,  C23C16/45523 ,  H01J9/025 ,  H01J2201/30449

Abstract: The present disclosure relates to a method for preparing a molybdenum disulfide film used in a field emission device, including: providing a sulfur vapor; blowing the sulfur vapor into a reaction chamber having a substrate and MoO3 powder to generate a gaseous MoOx; feeding the sulfur vapor into the reaction chamber sequentially, heating the reaction chamber to a predetermined reaction temperature and maintaining for a predetermined reaction time, and then cooling the reaction chamber to a room temperature and maintaining for a second reaction time to form a molybdenum disulfide film on the surface of the substrate, in which the molybdenum disulfide film grows horizontally and then grows vertically. The method according to the present disclosure is simple and easy, and the field emission property of the MoS2 film obtained is good.

Abstract translation: 本公开涉及一种制备用于场致发射装置的二硫化钼膜的方法，包括：提供硫蒸汽; 将硫蒸气吹入具有基底和MoO 3粉末的反应室中以产生气态MoO x; 将硫蒸气依次进料到反应室中，将反应室加热至预定的反应温度并保持预定的反应时间，然后将反应室冷却至室温并保持第二反应时间以形成二硫化钼膜 在其中二硫化钼膜水平生长然后垂直生长的基底表面上。 根据本公开的方法简单易行，并且所获得的MoS2膜的场发射性能良好。

公开(公告)号：US09230770B2

公开(公告)日：2016-01-05

申请号：US13704902

申请日：2011-02-23

Applicant: Yong Hyup Kim ,  Wal Jun Kim

Inventor： Yong Hyup Kim ,  Wal Jun Kim

IPC: H01J19/06 ,  H01K1/04 ,  H01J9/02 ,  H01B1/04 ,  H01B1/08 ,  H01J1/304 ,  B23H9/00

CPC classification number: H01J9/025 ,  B23H9/00 ,  H01B1/04 ,  H01B1/08 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30449 ,  H01J2201/30469

Abstract: The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

Abstract translation: 导电纳米结构体及其成型方法技术领域本发明涉及导电性纳米结构体，其成型方法及使用其的场致发射体的制造方法。 更具体地说，本发明涉及一种场致发射纳米结构，其包括导电衬底，布置在导电衬底上的导电纳米结构以及布置在导电衬底和导电纳米结构之间的界面中的导电界面化合物，以及一 其制造方法以及使用该场致发射体的制造方法。

公开(公告)号：US20150146848A1

公开(公告)日：2015-05-28

申请号：US14400703

申请日：2013-03-14

Applicant: THE GENERAL HOSPITAL CORPORATION

Inventor： Rajiv Gupta ,  Luis Fernando Velasquez-Garcia ,  Richard Lanza ,  Berthold KP Horn ,  Tayo Akinwande

IPC: G01N23/04 ,  A61B6/00 ,  G01V5/00

CPC classification number: H01J35/065 ,  A61B6/032 ,  A61B6/40 ,  A61B6/4007 ,  A61B6/405 ,  A61B6/4405 ,  A61B6/484 ,  G01N23/04 ,  G01V5/0016 ,  G01V5/0041 ,  G21K2207/005 ,  H01J35/025 ,  H01J35/04 ,  H01J35/045 ,  H01J35/12 ,  H01J35/14 ,  H01J35/18 ,  H01J2201/30449 ,  H01J2235/062 ,  H01J2235/068 ,  H01J2235/087 ,  H01J2235/186

Abstract: Described here is a method for performing phase contrast imaging using an array of independently controllable x-ray sources. The array of x-ray sources can be controlled to produce a distinct spatial pattern of x-ray radiation and thus can be used to encode phase contrast signals without the need for a coded aperture. The lack of coded aperture increases the flexibility of the imaging method. For instance, because a fixed, coded aperture is not required, the angular resolution of the imaging technique can be increased as compared to coded-aperture imaging. Moreover, the lack of a radioopaque coded aperture increases the photon flux that reaches the subject, thereby increasing the attainable signal-to-noise ratio.

Abstract translation: 这里描述了使用独立可控x射线源的阵列进行相位对比成像的方法。 可以控制x射线源的阵列以产生X射线辐射的不同的空间图案，并且因此可用于对相位差信号进行编码，而不需要编码孔径。 编码孔径的缺乏增加了成像方法的灵活性。 例如，由于不需要固定的编码孔径，与编码孔径成像相比，可以增加成像技术的角度分辨率。 此外，缺乏无辐射光编码孔径增加了到达对象的光子通量，从而增加了可达到的信噪比。

公开(公告)号：US20150125340A1

公开(公告)日：2015-05-07

申请号：US14554264

申请日：2014-11-26

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Materials Co., Ltd.

Inventor： Shinichi YAMAMOTO ,  Kayo NAKANO ,  Hiromichi HORIE

IPC: H01J1/144 ,  C22C27/04

CPC classification number: H01J1/144 ,  B22F5/12 ,  C22C1/045 ,  C22C1/1078 ,  C22C27/04 ,  C22C32/0052 ,  H01J23/05 ,  H01J61/0735 ,  H01J2201/30449

Abstract: According to one embodiment, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.

Abstract translation: 根据一个实施方式，钨合金以ZrC计为0.1〜5重量％的Zr。

公开(公告)号：US08593049B2

公开(公告)日：2013-11-26

申请号：US12562470

申请日：2009-09-18

Applicant: Yoon-chul Son ,  Yong-chul Kim ,  Jeong-na Heo ,  Woo-sung Cho ,  Byeong-kwon Ju

Inventor： Yoon-chul Son ,  Yong-chul Kim ,  Jeong-na Heo ,  Woo-sung Cho ,  Byeong-kwon Ju

IPC: H01J1/304

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2329/0442 ,  H01J2329/0455

Abstract: A field electron emitter including a metal electrode; and a plurality of carbon nanotubes, wherein a portion of the plurality of carbon nanotubes protrude from a surface of the metal electrode and a portion of the plurality of carbon nanotubes are in the metal electrode. Also disclosed is a field electron emission device including the field electron emitter and a method of manufacturing the field electron emitter.

Abstract translation: 包括金属电极的场电子发射体; 和多个碳纳米管，其中所述多个碳纳米管的一部分从所述金属电极的表面突出，并且所述多个碳纳米管的一部分在所述金属电极中。 还公开了包括场电子发射体的场电子发射装置和制造场电子发射体的方法。