Abstract:
An apparatus which permits high-angle annular dark-field (HAADF) imaging comprises an electron gun, a specimen chamber in which a specimen is set, a gas cylinder for supplying environmental gas around the surface of the specimen through both a gas flow rate controller and a gas nozzle, a vacuum pump for evacuating the inside of the specimen chamber, an objective lens including upper and lower polepieces, a detector for detecting electrons transmitted through the specimen, a display device for displaying a transmission image of the specimen, orifice plates having minute holes, holders supporting the orifice plates, a drive mechanism for driving the holders, and a motion controller. The orifice plates can be moved in a direction crossing the optical axis of the beam on the upper and lower surfaces of the upper and lower polepieces of the objective lens.
Abstract:
Aimed at providing an ion implantation apparatus elongated in period over which failure of a target work, due to deposition and release of ion species typically to and from the inner surface of a through-hole shaping a beam shape of ion beam, may be avoidable, reduced in frequency of exchange of an aperture component, and consequently improved in productivity, an aperture component shaping a beam shape has a taper opposed to the ion beam, in at least a part of inner surface of at least the through-hole, and has a thick thermal-sprayed film formed so as to cover the inner surface and therearound of the through-hole.
Abstract:
Particle beam systems, for example electron beam microscopes, exhibit improved resolution in a first direction by manipulating a beam of charged particles so that the beam has a non-circular beam profile in a focal plane of an objective lens. Multiple images of a sample can be recorded at different orientations of the beam profile relative to the sample, and the recorded images can be synthesized using non-uniform spatial-frequency weights to obtain an image of the sample having improved resolution in any direction. The orientation of the beam profile can be adjusted to a target orientation depending on a structure on a sample prior to recording an image of the sample, thereby making it possible to achieve highest resolution in a selected direction of interest.
Abstract:
In one embodiment, a beam detector includes a first aperture plate including a first passage hole, a second aperture plate including a second passage hole that allows a single detection target beam passing through the first passage hole to pass therethrough, and a sensor detecting a beam current of the detection target beam passing through the second passage hole. The second aperture plate includes an electrically conductive material, a plurality of third passage holes are formed around the second passage hole, and the plurality of third passage holes allow light to pass therethrough.
Abstract:
A scanning transmission electron microscope equipped with an aberration corrector is capable of automatically aligning the position of a convergence aperture with the center of an optical axis irrespective of skill and experience of an operator. The scanning transmission electron microscope system includes an electron source; a condenser lens configured to converge an electron beam emitted from the electron source; a deflector configured to cause the electron beam to perform scanning on a sample; an aberration correction device configured to correct an aberration of the electron beam; a convergence aperture configured to determine a convergent angle of the electron beam; and a detector configured to detect electrons passing through or diffracted by the sample. The system acquires information on contrast of a Ronchigram formed by the electron beam passing through the sample, and determines a position of the convergence aperture on the basis of the information.
Abstract:
A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.
Abstract:
A focused ion beam apparatus includes an ion gun unit having an emitter tip, a gas supply unit that supplies gas to the tip, and an ion source gas supply source. An extracting electrode ionizes the gas adsorbed onto the surface of the tip and extracts ions by applying a voltage between the extracting electrode and the tip. A cathode electrode accelerates the ions toward a sample. An aperture member has an opening that passes therethrough a part of the ion beam ejected from the ion gun unit, and a lens system focuses the ion beam onto the sample.
Abstract:
A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.
Abstract:
An electron microscope including an electron source, a condenser lens having either a circular aperture for focusing a solid cone of electrons onto a specimen or an annular aperture for focusing a hollow cone of electrons onto the specimen, and an objective elns having an annular objective aperture, for focusing electrons passing through the specimen onto an image plane. The invention also entails a method of making the annular objective aperture using electron imaging, electrolytic deposition and ion etching techniques.
Abstract:
Transmission microscopy imaging systems include a mask and/or other modulator situated to encode image beams, e.g., by deflecting the image beam with respect to the mask and/or sensor. The beam is modulated/masked either before or after transmission through a sample to induce a spatially and/or temporally encoded signal by modifying any of the beam/image components including the phase/coherence, intensity, or position of the beam at the sensor. For example, a mask can be placed/translated through the beam so that several masked beams are received by a sensor during a single sensor integration time. Images associated with multiple mask displacements are then used to reconstruct a video sequence using a compressive sensing method. Another example of masked modulation involves a mechanism for phase-retrieval, whereby the beam is modulated by a set of different masks in the image plane and each masked image is recorded in the diffraction plane.