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公开(公告)号：US20170350017A1
公开(公告)日：2017-12-07
申请号：US15685568
申请日：2017-08-24
Applicant: Applied Materials, Inc.
Inventor： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger, JR. , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
CPC classification number: C23F1/08 , B01J12/002 , C23C14/28 , H01J37/321 , H01J37/3211 , H01J37/32733 , H01J37/32834 , H05H1/46
Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.
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22.发明授权Methods and apparatus for rapidly responsive heat control in plasma processing devices 有权等离子体处理装置中快速响应热控制的方法和装置公开(公告)号：US08895889B2
公开(公告)日：2014-11-25
申请号：US13732621
申请日：2013-01-02
Applicant: Applied Materials, Inc.
Inventor： Chunlei Zhang , Richard Fovell , Ezra Robert Gold , Ajit Balakrishna , James P. Cruse
CPC classification number: H05B7/18 , H01J37/32724 , H01J2237/2001 , H01L21/67069
Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.
Abstract translation: 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。
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23.发明申请PLASMA REACTOR WITH ELECTRON BEAM PLASMA SOURCE HAVING A UNIFORM MAGNETIC FIELD 有权具有均匀磁场的电子束等离子体源的等离子体反应器公开(公告)号：US20140035458A1
公开(公告)日：2014-02-06
申请号：US13945200
申请日：2013-07-18
Applicant: Applied Materials, Inc.
Inventor： Ming-Feng Wu , Ajit Balakrishna , Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra
IPC: H01J37/32
CPC classification number: H01J37/32669 , H01J37/3233
Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.
Abstract translation: 电子束发生器的电子束约束电磁体与电子束轴线对准，每个电磁体被折叠以限定相对于所述主要部分以相应角度设置的主部分和一对成角度的翼部分，并且导体缠绕 围绕边缘。
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公开(公告)号：US11693053B2
公开(公告)日：2023-07-04
申请号：US17892441
申请日：2022-08-22
Applicant: Applied Materials, Inc.
Inventor： Tao Zhang , Upendra V. Ummethala , Ajit Balakrishna
IPC: G01D21/02 , G01F1/86 , G05B13/02 , G01F1/84 , G01R31/3177
CPC classification number: G01R31/3177 , G01D21/02 , G01F1/8436 , G01F1/86 , G05B13/025
Abstract: A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.
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公开(公告)号：US11486927B2
公开(公告)日：2022-11-01
申请号：US16838834
申请日：2020-04-02
Applicant: Applied Materials, Inc.
Inventor： Tao Zhang , Upendra V. Ummethala , Ajit Balakrishna
IPC: G01D21/02 , G05B13/02 , G01F1/84 , G01R31/3177 , G01F1/86
Abstract: A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.
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Patent Agency Ranking
公开(公告)号：US20220245307A1
公开(公告)日：2022-08-04
申请号：US17166965
申请日：2021-02-03
Applicant: Applied Materials, Inc.
Inventor： Prashanth Kothnur , Karthik Ramanathan , Ajit Balakrishna , Kartik Shah , Umesh Kelkar , Vishwas Pandey , Prasoon Shukla , Sushil Arun Samant
Abstract: Embodiments described herein include processes for generating a hybrid model for modeling processes in semiconductor processing equipment. In a particular embodiment, method of creating a hybrid machine learning model comprises identifying a first set of cases spanning a first range of process and/or hardware parameters, and running experiments in a lab for the first set of cases. The method may further comprise compiling experimental outputs from the experiments, and running physics based simulations for the first set of cases. In an embodiment, the method may further comprise compiling model outputs from the simulations, and correlating the model outputs with the experimental outputs with a machine learning algorithm to provide the hybrid machine learning model.
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公开(公告)号：US10910238B2
公开(公告)日：2021-02-02
申请号：US15703666
申请日：2017-09-13
Applicant: Applied Materials, Inc.
Inventor： Kaushik Alayavalli , Ajit Balakrishna , Sanjeev Baluja , Amit Kumar Bansal , Matthew James Busche , Juan Carlos Rocha-Alvarez , Swaminathan T. Srinivasan , Tejas Ulavi , Jianhua Zhou
IPC: H01L21/67 , H01L21/687
Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.
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公开(公告)号：US10546728B2
公开(公告)日：2020-01-28
申请号：US15199046
申请日：2016-06-30
Applicant: Applied Materials, Inc.
Inventor： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
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公开(公告)号：US10131994B2
公开(公告)日：2018-11-20
申请号：US13666245
申请日：2012-11-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger, Jr. , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
Abstract: A plasma reactor for processing a workpiece includes a reactor chamber having a ceiling and a sidewall and a workpiece support facing the ceiling and defining a processing region, and a pair of concentric independently excited RF coil antennas overlying the ceiling and a side RF coil concentric with the side wall and facing the side wall below the ceiling, and being excited independently.
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30.发明申请公开(公告)号：US20170350018A1
公开(公告)日：2017-12-07
申请号：US15685787
申请日：2017-08-24
Applicant: Applied Materials, Inc.
Inventor： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
CPC classification number: C23F1/08 , B01J12/002 , C23C14/28 , H01J37/321 , H01J37/3211 , H01J37/32733 , H01J37/32834 , H05H1/46
Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.
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