公开(公告)号：US20160059380A1

公开(公告)日：2016-03-03

申请号：US14832767

申请日：2015-08-21

Applicant: EBARA CORPORATION

Inventor： Kuniaki YAMAGUCHI ,  Itsuki KOBATA ,  Toshio MIZUNO ,  Mitsuru MIYAZAKI ,  Naoki TOYOMURA ,  Takuya INOUE

IPC: B24B53/017 ,  B08B3/12 ,  B08B3/10 ,  B08B3/02 ,  H01L21/306 ,  B08B1/00

CPC classification number: B24B53/017 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67046 ,  H01L21/67051

Abstract: An embodiment of the present invention provides a buff process module. The buff process module includes: a buff table on which a processing target object is mounted; a buff head that holds a buff pad for applying a predetermined process to the processing target object; a buff arm that supports and swings the buff head; a dresser for dressing the buff pad; and a cleaning mechanism that is disposed between the buff table and the dresser and is for cleaning the buff pad.

Abstract translation: 本发明的实施例提供了一种buff处理模块。 抛光处理模块包括：抛光台，其上安装有加工对象物体; 保持用于将预定处理应用于处理目标对象的抛光垫的抛光头; 一个支撑和摆动buff头的抛光臂; 用于打磨抛光垫的梳妆台; 以及清洁机构，其布置在抛光台和修整器之间并且用于清洁抛光垫。

公开(公告)号：US20240399526A1

公开(公告)日：2024-12-05

申请号：US18670447

申请日：2024-05-21

Applicant: EBARA CORPORATION

Inventor： Yuichi KATO ,  Itsuki KOBATA ,  Nobuyuki TAKADA ,  Shingo TOGASHI ,  Hiroaki NISHIDA

IPC: B24B37/005 ,  B24B37/11

Abstract: A polishing head capable of accurately controlling a thickness profile of a wafer is disclosed. The polishing head includes a plurality of pressure actuators, an actuator operation controller, an actuator support portion, and an clastic holder. The actuator operation controller is mounted on a head main body.

公开(公告)号：US20210283746A1

公开(公告)日：2021-09-16

申请号：US17193049

申请日：2021-03-05

Applicant: EBARA CORPORATION

Inventor： Takuya MORIURA ,  Hiroshi SOTOZAKI ,  Tadakazu SONE ,  Masayoshi ITO ,  Itsuki KOBATA ,  Hisanori MATSUO ,  Tetsuya TERADA

IPC: B24B57/02 ,  B24B37/04

Abstract: There is provided an apparatus for polishing, comprising a table configured to support a polishing pad; a polishing head configured to hold a substrate; and a polishing solution supply device configured to supply a polishing solution between the polishing pad and the substrate. The polishing solution supply device comprises a plurality of polishing solution supply ports arrayed in a direction intersecting with a rotating direction of the polishing pad in a state that the polishing solution supply device is placed on an upstream side in rotation of the polishing pad relative to the substrate. The polishing solution supply device supplies the polishing solution, such that the polishing solution supplied from the plurality of polishing solution supply ports has a predetermined flow rate distribution.

公开(公告)号：US20200269383A1

公开(公告)日：2020-08-27

申请号：US16495010

申请日：2018-01-10

Applicant: Ebara Corporation

Inventor： Hozumi YASUDA ,  Itsuki KOBATA ,  Nobuyuki TAKAHASHI ,  Suguru SAKUGAWA

IPC: B24B53/017 ,  B24B37/005 ,  B24B53/12

Abstract: Provided is a polishing device for appropriately retaining a polishing member in an appropriate state in polishing. The polishing device for partially polishing a substrate includes a polishing member having a processing surface which comes into contact with the substrate and which is smaller than the substrate, a conditioning member for performing conditioning on the polishing member, a first pressing mechanism for pressing the conditioning member against the polishing member in polishing the substrate, and a control unit for controlling an operation of the polishing device. The control unit is configured to control the first pressing mechanism when the substrate is partially polished by the polishing member.

公开(公告)号：US20180286717A1

公开(公告)日：2018-10-04

申请号：US15935922

申请日：2018-03-26

Applicant: EBARA CORPORATION

Inventor： Katsuhide WATANABE ,  Itsuki KOBATA

IPC: H01L21/67

Abstract: Provided is a substrate processing apparatus for making a catalyst and a substrate close to each other or be in contact with each other in the presence of processing liquid to etch a processing target area of the substrate, the substrate processing apparatus including a substrate holder for holding a substrate, and a catalyst holder for holding a catalyst, wherein the catalyst holder comprises a base plate having high rigidity, a piezoelectric element arranged to be adjacent to the base plate, a catalyst holding base having high rigidity arranged to be adjacent to the piezoelectric element, and a catalyst held by the catalyst holding base, and wherein the substrate processing apparatus further comprises a control device for controlling a driving voltage to be applied to the piezoelectric element.

公开(公告)号：US20180001438A1

公开(公告)日：2018-01-04

申请号：US15636343

申请日：2017-06-28

Applicant: EBARA CORPORATION

Inventor： Suguru SAKUGAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI ,  Zhongxin WEN ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Itsuki KOBATA ,  Tomohiko TAKEUCHI

IPC: B24B37/005 ,  H01L21/306 ,  B24B37/10

CPC classification number: B24B37/005 ,  B24B37/10 ,  H01L21/30625

Abstract: According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface.

公开(公告)号：US20170047237A1

公开(公告)日：2017-02-16

申请号：US15305088

申请日：2015-04-17

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Keita YAGI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI

IPC: H01L21/677 ,  H01L21/3105 ,  B24B37/20 ,  H01L21/67 ,  H01L21/683 ,  H01L21/306 ,  H01L21/321

Abstract: An object of the present invention is to improve a substrate processing apparatus using the CARE method.The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Abstract translation: 本发明提供了一种用于在处理液体存在下使基板和催化剂彼此接触来研磨基板的加工对象区域的基板处理装置。 基板处理装置包括：基板保持单元，其被构造成保持基板;催化剂保持单元，其构造成保持催化剂;以及驱动单元，被配置为使所述基板保持单元和所述催化剂保持单元相对于所述处理对象区域移动 的基底和催化剂保持彼此接触。 催化剂小于底物。

公开(公告)号：US20160325399A1

公开(公告)日：2016-11-10

申请号：US15215343

申请日：2016-07-20

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Yoichi KOBAYASHI ,  Katsutoshi ONO ,  Masaki KINOSHITA ,  Toshifumi KIMBA

IPC: B24B37/26 ,  H01L21/66 ,  B24B49/12 ,  B24B37/013 ,  B24B37/04 ,  B24B37/10 ,  H01L21/3105 ,  B24B37/005

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

公开(公告)号：US20240087963A1

公开(公告)日：2024-03-14

申请号：US18505194

申请日：2023-11-09

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/015 ,  B24B37/04 ,  H01L21/321

CPC classification number: H01L22/12 ,  B24B37/005 ,  B24B37/0056 ,  B24B37/015 ,  B24B37/044 ,  H01L21/3212

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

公开(公告)号：US20230038445A1

公开(公告)日：2023-02-09

申请号：US17878840

申请日：2022-08-01

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Yosuke HIMORI

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.