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    LIGHT EMITTING DIODE
    23.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160329461A1

    公开(公告)日：2016-11-10

    申请号：US15135573

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/10 ,  H01L33/62 ,  H01L33/24 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

    Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

    Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。

    LIGHT EMITTING DIODE
    24.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160247974A1

    公开(公告)日：2016-08-25

    申请号：US15045279

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

    IPC: H01L33/46 ,  H01L33/06 ,  H01L33/38 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12

    CPC classification number: H01L33/46 ,  H01L33/38

    Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

    Abstract translation: 包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极和布拉格反射器结构的发光二极管。 发光层被配置为发射光束并且位于第一类型半导体层和第二类型半导体层之间。 光束在发光波长范围内具有峰值波长。 第一型半导体层，发光层和第二类型半导体层位于布拉格反射器结构的同一侧。 至少覆盖0.8X〜1.8Xnm的反射波长范围内，布拉格反射体结构的反射率大于或等于95％，X是发光波长范围的峰值波长。

    LIGHT-EMITTING DIODE CHIP
    25.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：US20160247972A1

    公开(公告)日：2016-08-25

    申请号：US15045263

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang

    IPC: H01L33/38 ,  H01L33/06 ,  H01L33/40 ,  H01L33/14

    CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/20 ,  H01L2933/0016

    Abstract: A light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion.

    Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一掺杂半导体层，第二掺杂半导体层和位于第一和第二掺杂半导体层之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层设置在第二掺杂半导体层上，电流阻挡层包括主体和从主体延伸的延伸部分。 电流扩展层覆盖电流阻挡层。 第二电极经由电流扩展层与第二掺杂半导体层电连接，其中第二电极包括接合焊盘和从焊盘延伸的指状部分，焊盘位于主体上方， 手指部分位于延伸部分的上方，并且手指部分的部分区域不与延伸部分重叠。

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