公开(公告)号：US08680565B2

公开(公告)日：2014-03-25

申请号：US13707292

申请日：2012-12-06

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo ,  Po-Jen Su

IPC: H01L33/38 ,  H01L33/24

CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382

Abstract: A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

Abstract translation: 揭示了发光二极管（LED）。 LED包括基板，第一掺杂层，发光层，第二类型掺杂层，多个第一凹槽，第二凹槽，绝缘层，第一触点和第二触点。 LED的特征在于，第二凹槽连接到每个第一凹槽的一端并且穿透第二类型掺杂层和发光层以暴露第一掺杂层的一部分。 第一接触和第一掺杂层之间的接触面积增加。 因此，LED在高电流密度下工作而不会积热。 此外，发光面积不降低，发光效率不受影响。 LED在封装衬底上翻转以形成倒装芯片LED封装。

公开(公告)号：US20160190390A1

公开(公告)日：2016-06-30

申请号：US15064578

申请日：2016-03-08

Applicant: Genesis Photonics Inc.

Inventor： Yun-Li Li ,  Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/58

Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.

公开(公告)号：US20160049555A1

公开(公告)日：2016-02-18

申请号：US14918580

申请日：2015-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

公开(公告)号：US09153743B2

公开(公告)日：2015-10-06

申请号：US13835367

申请日：2013-03-15

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hung Lin ,  Yu-Yun Lo ,  Cheng-Yen Chen ,  Yu-Hung Lai

IPC: H01L33/36 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0095 ,  H01L2933/0025

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。

公开(公告)号：US20150188014A1

公开(公告)日：2015-07-02

申请号：US14535333

申请日：2014-11-07

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/42 ,  H01L33/44

CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

公开(公告)号：US20150102378A1

公开(公告)日：2015-04-16

申请号：US14513218

申请日：2014-10-14

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Kuan-Yung Liao ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/58 ,  H01L33/52 ,  H01L33/60 ,  H01L33/50

CPC classification number: H01L33/58 ,  H01L33/50 ,  H01L33/52 ,  H01L33/60

Abstract: A light-emitting diode package structure includes a package carrier, a light guiding component and a light emitting unit. The light guiding component is disposed on the package carrier. The light emitting unit is disposed on an upper surface of light guiding component relatively distant from the package carrier. A horizontal projection area of the light guiding component is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding component and emits from the upper surface of the light guiding component. An included angle existing between the light beam and a normal direction of the upper surface ranges from 0 degree to 75 degrees.

Abstract translation: 发光二极管封装结构包括封装载体，导光部件和发光单元。 导光部件设置在封装载体上。 发光单元设置在相对远离封装载体的导光部件的上表面上。 导光部件的水平投影面积大于发光部件的水平投影面积。 发光单元适于发射光束，并且光束的一部分进入导光部件并从导光部件的上表面发射。 存在于光束与上表面的法线方向之间的夹角为0度〜75度。