Abstract:
A method may include depositing a dielectric layer onto a substrate, removing portions of the dielectric layer to create a plurality of separated non-removed portions of the dielectric layer, depositing one or more passive electronic components into each of the plurality of separated non-removed portions, and curing the separated non-removed portions of the dielectric layer.
Abstract:
A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.
Abstract:
An embedded passive structure, its method of formation, and its integration onto a substrate during fabrication are disclosed. In one embodiment, the embedded passive structure is a thin film capacitor (TFC) formed using a thin film laminate that has been mounted onto a substrate. The TFC's capacitor dielectric and/or lower electrode layers are patterned in such a way as to reduce damage and improve cycle time. In one embodiment, the capacitor dielectric has a high dielectric constant and the substrate is an organic packaging substrate.
Abstract:
A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a pattern that is a mirror image of a pattern of the pre-patterned high-k dielectric film; disposing the template onto the support layer; providing a high-k precursor material inside the template openings; curing the high-k precursor material inside the template openings to yield a cured film; and removing the template from the support layer after curing to leave the cured film on the conductive film.
Abstract:
A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.
Abstract:
Apparatus comprising a multilayered reactive foil preform including alternating layers of first and second materials deposited on foils. The layers also include piezoelectric ceramic particles to provide an electrical stimulus when pressure is applied to activate an exothermic reaction between the first and second materials.
Abstract:
An embedded passive structure, its method of formation, and its integration onto a substrate during fabrication are disclosed. A method comprises providing a thin film capacitor laminate that comprises: a high-k ceramic dielectric film; a conductive film disposed on one side of the high-k ceramic dielectric film; and a first electrode layer including first conductive portions disposed on another side of the high-k ceramic dielectric film. The method further comprises providing through via openings in the high-k ceramic dielectric film using powder blasting; and patterning the conductive film to yield a intermediate second electrode layer including intermediate second conductive portions disposed on the one side of the high-k ceramic dielectric film.
Abstract:
A method of interconnecting and an interconnect is provided to connect a first component and a second component of an integrated circuit. The interconnect includes a plurality of Carbon Nanotubes (CNTs), which provide a conducting path between the first component and the second component. The interconnect further includes a passivation layer to fill the gaps between adjacent CNTs. A method of producing Anisotropic Conductive Film (ACF) and an ACF is provided. The ACF includes a plurality of CNTs, which provide a conducting path between a first side of the ACF and a second side of the ACF. The sides of the ACF can also include a conductive curable adhesive layer. In an embodiment, the conductive curable adhesive layer can incorporate a B-stage cross-linkable polymer and silver particles.
Abstract:
A method of fabricating an integrated circuit package, comprising prefabricating a film capacitor including forming a first conductive layer, depositing a dielectric layer on the first conductive layer, and depositing a second conductive layer on the dielectric layer; forming a substrate; and laminating the prefabricated film capacitor to the substrate.
Abstract:
A method of interconnecting and an interconnect is provided to connect a first component and a second component of an integrated circuit. The interconnect includes a plurality of Carbon Nanotubes (CNTs), which provide a conducting path between the first component and the second component. The interconnect further includes a passivation layer to fill the gaps between adjacent CNTs. A method of producing Anisotropic Conductive Film (ACF) and an ACF is provided. The ACF includes a plurality of CNTs, which provide a conducting path between a first side of the ACF and a second side of the ACF. The sides of the ACF can also include a conductive curable adhesive layer. In an embodiment, the conductive curable adhesive layer can incorporate a B-stage cross-linkable polymer and silver particles.