SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240189856A1

    公开(公告)日:2024-06-13

    申请号:US18282025

    申请日:2022-03-01

    CPC classification number: B05C9/14 B05C15/00 B05D3/02 B05D3/0466

    Abstract: A substrate processing apparatus that forms a friction reducing film on a rear surface of a substrate includes a processing container configured to accommodate the substrate and to define a hermetically-sealed processing space, a heating element configured to heat the rear surface of the substrate inside the processing container, a supplier configured to supply a material forming the friction reducing film toward the rear surface of the substrate inside the processing container, a first gas supplier configured to supply an inert gas to a peripheral edge of the substrate from a space above the substrate, a second gas supplier configured to supply the inert gas closer to a center of the substrate than the first gas supplier from a space above the substrate inside the processing, and an exhauster configured to exhaust an atmosphere of the processing space from a periphery or a space below the substrate.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230241644A1

    公开(公告)日:2023-08-03

    申请号:US18161888

    申请日:2023-01-31

    CPC classification number: B05D3/0466 C09K13/00

    Abstract: A substrate processing apparatus includes a processing bath, a first lid member, an outer bath, a processing liquid introduction unit, a first gas supply unit, and a second gas supply unit. The processing bath stores a processing liquid in which a substrate is immersed. The first lid member covers an upper opening of the processing bath. The outer bath is provided outside of the processing bath and a processing liquid overflowing out of the processing liquid from the processing bath flows into the outer bath. The processing liquid introduction unit is able to introduce the processing liquid stored in the outer bath into the processing bath. The first gas supply unit supplies a first inert gas to the processing liquid stored in the processing bath. The second gas supply unit supplies a second inert gas into the outer bath.

    OMNIPHOBIC SURFACE
    24.
    发明申请
    OMNIPHOBIC SURFACE 审中-公开

    公开(公告)号:US20180161810A1

    公开(公告)日:2018-06-14

    申请号:US15526241

    申请日:2015-11-12

    Applicant: AMF GmbH

    Inventor: Karsten Reihs

    CPC classification number: B05D5/08 B05D1/185 B05D3/0466 C23C14/165 C23C14/34

    Abstract: The invention relates to a structured surface with omniphobic properties, a method for producing said surface and the use thereof. When liquids are contacted with the structured surface the surface tension of the liquid is significantly increased. The omniphobic surface has a contact angle of >90° with respect to low-energy liquids such as squalene, as well as with respect to higher energy liquids such as water.

    COATING METHOD, COMPUTER STORAGE MEDIUM AND COATING APPARATUS
    26.
    发明申请
    COATING METHOD, COMPUTER STORAGE MEDIUM AND COATING APPARATUS 审中-公开
    涂料方法,计算机储存介质和涂料装置

    公开(公告)号:US20160167079A1

    公开(公告)日:2016-06-16

    申请号:US14963802

    申请日:2015-12-09

    Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

    Abstract translation: 提供了一种涂布方法,其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤:向晶片供给涂布溶液的溶剂,以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度(时间t1-t2)旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速(时刻t4-t5)的第二转速旋转晶片,使涂布液在晶片上扩散。 溶剂的供给继续进行,直到涂布液与溶剂的液膜接触(时刻t0-t3)为止。

    Method of Shaping a Surface Coating on a Razor Blade
    27.
    发明申请
    Method of Shaping a Surface Coating on a Razor Blade 有权
    在剃刀刀片上形成表面涂层的方法

    公开(公告)号:US20160096282A1

    公开(公告)日:2016-04-07

    申请号:US14875955

    申请日:2015-10-06

    Abstract: A method for shaping a coating on a razor blade, and a razor blade produced using the aforesaid method, are provided. The method includes the steps of a) providing a razor blade having a tip end defined by at least one tip surface and a cutting edge; b) applying a surface coating having a first thickness on at least one tip surface; and c) shaping the surface coating on the at least one tip surface to have a second thickness using a fluid stream, which second thickness is less than the first thickness.

    Abstract translation: 提供了一种在剃刀刀片上形成涂层的方法,以及使用上述方法制造的剃刀刀片。 该方法包括以下步骤:a)提供具有由至少一个尖端表面和切割刃限定的尖端的剃刀刀片; b)在至少一个尖端表面上施加具有第一厚度的表面涂层; 以及c)使所述至少一个尖端表面上的表面涂层成形,以具有使用流体流的第二厚度,该第二厚度小于第一厚度。

    LIQUID APPLICATION SYSTEM
    28.
    发明申请
    LIQUID APPLICATION SYSTEM 审中-公开
    液体应用系统

    公开(公告)号:US20160052008A1

    公开(公告)日:2016-02-25

    申请号:US14782501

    申请日:2014-04-04

    Abstract: It is provided in a liquid application system for applying liquid to a material cake transported on a conveyor device having a liquid application device, that the conveyor device comprises a porous section on which the material cake lies or which the material cake contacts and which is permeable for a liquid to be applied, that the liquid application device comprises an application device via which the liquid to be applied can be applied to the side of the porous section of the conveyor device facing away from the material cake, and that the liquid application device comprises an overpressure chamber having a first overpressure relative to the environment by which the porous section of the conveyor device passes, wherein the applied liquid can be transported via the first overpressure through the porous section of the conveyor device or held via the first overpressure to the porous section.

    Abstract translation: 它设置在用于将液体施加到在具有液体施加装置的传送装置上运送的材料饼的液体施加系统中,所述输送装置包括多孔部分,所述材料饼在所述多孔部分上或所述材料饼接触并且是可透过的 对于要施加的液体,液体施加装置包括施加装置,通过该施加装置将待施加的液体施加到输送装置的远离料饼的多孔部分的一侧,并且液体施加装置 包括超压室,其相对于输送装置的多孔部分通过的环境具有第一超压,其中所施加的液体可以经由第一过压通过输送装置的多孔部分运送或经由第一过压保持至 多孔段。

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