公开(公告)号：US20180027337A1

公开(公告)日：2018-01-25

申请号：US15246561

申请日：2016-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Weng-Yi Chen ,  En-Chan Chen ,  Shih-Wei Li ,  Guo-Chih Wei

IPC: H04R17/02 ,  H04R19/00 ,  H04R31/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: H04R17/025 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/06 ,  H04R7/04 ,  H04R7/20 ,  H04R17/02 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003

Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.

公开(公告)号：US09869598B1

公开(公告)日：2018-01-16

申请号：US15192311

申请日：2016-06-24

Applicant: Honeywell International Inc.

Inventor： Richard Wade ,  Alistair David Bradley

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: G01L9/0055 ,  B81B3/0021 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2203/0109 ,  G01L1/16 ,  G01L1/18

Abstract: Disclosed herein are force sensors which include a sense die assembly and methods for manufacturing the sense die assembly and the force sensor. The disclosed sense die assembly, force sensor, and methods utilize wafer-level retention to hold an actuation element in a cavity of the sense die.

公开(公告)号：US09862595B2

公开(公告)日：2018-01-09

申请号：US15023057

申请日：2014-12-04

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Errong Jing

IPC: H01L21/30 ,  H01L21/46 ,  B81C1/00

CPC classification number: B81C1/00142 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/013

Abstract: A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.

公开(公告)号：US20170311088A1

公开(公告)日：2017-10-26

申请号：US15497366

申请日：2017-04-26

Applicant: DONGBU HITEK CO., LTD.

Inventor： Jong Won SUN ,  Han Choon LEE

IPC: H04R19/04 ,  B81B7/00 ,  H04R19/00 ,  B81C1/00 ,  H04R31/00 ,  H04R7/18

CPC classification number: H04R19/04 ,  B81B7/0061 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/013 ,  H04R7/18 ,  H04R19/005 ,  H04R31/003 ,  H04R2201/003

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and an anchor extending from a circumference of the diaphragm to be connected with an end portion of the diaphragm. The diaphragm is spaced apart from the substrate and the back plate to covers the cavity, and the diaphragm senses an acoustic pressure to generate a displacement. The anchor extends from a circumference of the diaphragm to be connected with an end portion of the diaphragm, and is connected with the substrate to support the diaphragm. Thus, the MEMS microphone can prevent a portion of an insulation layer located around the anchor from remaining and can prevent a buckling phenomenon of the diaphragm from occurring.

公开(公告)号：US09796577B2

公开(公告)日：2017-10-24

申请号：US14778721

申请日：2015-04-15

Applicant: Boe Technology Group Co., Ltd.

Inventor： Chunyan Ji ,  Tian Yang

IPC: B81B3/00 ,  B81C1/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  F24J2/52

CPC classification number: B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

Abstract: The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.

公开(公告)号：US09783411B1

公开(公告)日：2017-10-10

申请号：US15349607

申请日：2016-11-11

Applicant: Rosemount Aerospace Inc.

Inventor： David P. Potasek ,  Sean Houlihan

IPC: H01L29/49 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0086 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00269 ,  B81C2201/013 ,  G01L9/0073

Abstract: A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.

公开(公告)号：US09782773B2

公开(公告)日：2017-10-10

申请号：US14950320

申请日：2015-11-24

Applicant: International Business Machines Corporation

Inventor： Yann A. Astier ,  Markus Brink ,  Michael F. Lofaro ,  Joshua T. Smith

IPC: H01L21/311 ,  B01L3/00 ,  B81C1/00 ,  B24B37/04 ,  G01N27/447 ,  G01N33/487 ,  G01N30/74 ,  G01N30/60 ,  G01N30/88

CPC classification number: B01L3/502707 ,  B01L3/502753 ,  B01L3/502761 ,  B01L2200/0652 ,  B01L2200/12 ,  B01L2300/0681 ,  B01L2300/0858 ,  B01L2300/0887 ,  B01L2300/0896 ,  B24B37/042 ,  B81C1/00087 ,  B81C2201/0104 ,  B81C2201/013 ,  G01N27/44791 ,  G01N30/6039 ,  G01N30/74 ,  G01N33/48721 ,  G01N2030/885

Abstract: A technique relates to a nanogap array. A substrate has been anisotropically etched with trenches that have tapered sidewalls. A sacrificial layer is on bottoms and the tapered sidewalls of the trenches. A filling material is formed on top of the sacrificial layer in the trenches. Nanogaps are formed where at least a portion of the sacrificial layer has been removed from the tapered sidewalls of the trenches while the sacrificial layer remains on the bottoms of the trenches. Each of the nanogaps is formed between one tapered sidewall of the substrate and a corresponding tapered sidewall of the filling material. The one tapered sidewall of the substrate opposes the corresponding tapered sidewall. A capping layer is disposed on top of the substrate and the filling material, such that the nanogaps are covered but not filled in.

公开(公告)号：US20170276931A1

公开(公告)日：2017-09-28

申请号：US15622111

申请日：2017-06-14

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Naftali Chayat ,  Noel Axelrod ,  Alexander Shpunt

IPC: G02B26/10 ,  B81C1/00 ,  G01S17/10 ,  G01S17/42 ,  G01S7/481 ,  G02B26/08 ,  G01S17/89

CPC classification number: G02B26/101 ,  B81B2201/04 ,  B81C1/0015 ,  B81C2201/013 ,  G01S7/4817 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/085

Abstract: A scanning device includes a substrate, which is etched to define an array of two or more parallel rotating members and a gimbal surrounding the rotating members. First hinges connect the gimbal to the substrate and defining a first axis of rotation, about which the gimbal rotates relative to the substrate. Second hinges connect the rotating members to the support and defining respective second, mutually-parallel axes of rotation of the rotating members relative to the support, which are not parallel to the first axis.

公开(公告)号：US20170275153A1

公开(公告)日：2017-09-28

申请号：US15080356

申请日：2016-03-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Ming Chen ,  Ping-Yin Liu ,  Chung-Yi Yu ,  Yeur-Luen Tu

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/052 ,  B81C1/00269 ,  B81C1/00357 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/036 ,  H01L24/03 ,  H01L24/09 ,  H01L2224/02163 ,  H01L2224/05082 ,  H01L2224/05109 ,  H01L2224/05117 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/1461

Abstract: An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

公开(公告)号：US20170235124A1

公开(公告)日：2017-08-17

申请号：US15583355

申请日：2017-05-01

Applicant: InPhenix, Inc.

Inventor： Mohammad Kamal ,  Tongning Li ,  David Eu ,  Qinian Qi

IPC: G02B26/00 ,  B81C1/00 ,  G02B1/11 ,  G02B1/12 ,  H01S3/08 ,  H01S3/105

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.