公开(公告)号：US20100134313A1

公开(公告)日：2010-06-03

申请号：US12627893

申请日：2009-11-30

Applicant: Naofumi Aoki ,  Shoji Nishida

Inventor： Naofumi Aoki ,  Shoji Nishida

IPC: G08B5/00 ,  H01J1/00 ,  H01J61/94

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

Abstract: An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.

Abstract translation: 电子发射器件包括在导电元件上的导电元件和硼化镧层，并且还包括在导电元件和硼化镧层之间的氧化物层。 氧化物层可以含有镧元素。 硼化镧层可以覆盖有氧化镧层。

公开(公告)号：US20100048391A1

公开(公告)日：2010-02-25

申请号：US12196092

申请日：2008-08-21

Applicant: Yong Hyup Kim ,  Wal Jun Kim

Inventor： Yong Hyup Kim ,  Wal Jun Kim

IPC: B01J23/28 ,  C25D5/02 ,  B01J23/30 ,  B01J23/755 ,  B01J23/745 ,  B01J23/00

CPC classification number: B01J23/755 ,  B01J23/28 ,  B01J23/74 ,  B01J23/888 ,  B01J37/0225 ,  B01J37/348 ,  B05B5/0255 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  H01J1/3044 ,  H01J9/025 ,  Y10S977/722 ,  Y10S977/742

Abstract: Techniques for forming metal catalyst particles on a metal tip, and nanostructures on a metal tip are provided.

Abstract translation: 提供了在金属尖端上形成金属催化剂颗粒的技术，以及金属端头上的纳米结构。

公开(公告)号：US20100006447A1

公开(公告)日：2010-01-14

申请号：US12169041

申请日：2008-07-08

Applicant: Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

Inventor： Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

IPC: C25D5/34 ,  B05D3/00 ,  B05D1/32 ,  C23C16/06 ,  C23C14/56 ,  B05D3/06 ,  B05D3/14

CPC classification number: C25D5/48 ,  B81C1/00111 ,  B82Y15/00 ,  C25D7/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J27/26 ,  H01J37/073 ,  H01J37/08 ,  H01J2201/30411 ,  H01J2201/30415 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2237/0807

Abstract: A method of preparing an ultra sharp tip, in particular a single atom tip, is provided, comprising providing a tip having a shank, an apex, and a coating covering the shank and the apex; locally removing the coating from the apex by field evaporation; and partially or fully restoring the coating at the apex.

Abstract translation: 提供了制备超尖尖，特别是单个原子尖端的方法，其包括提供具有柄，尖端和覆盖柄和顶点的涂层的尖端; 通过场蒸发从顶点局部去除涂层; 并且部分地或完全地恢复顶点处的涂层。

公开(公告)号：US20080129177A1

公开(公告)日：2008-06-05

申请号：US11567095

申请日：2006-12-05

Applicant: Colin R. Wilson ,  Ji-Ung Lee

Inventor： Colin R. Wilson ,  Ji-Ung Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01L21/00 ,  H01J3/00

CPC classification number: H01J1/3044 ,  H01J35/065 ,  H01J2235/068

Abstract: The system and method provided herein for limiting the effects of arcing in field-type electron emitter arrays improves the robustness of such arrays. Field-type electron emitter arrays generally have a substrate, an insulator, and a gating electrode. By including a resistive substance in the gate of the emitter array, arcing events may be isolated to a single emitter such that the remaining emitters of an array can continue electron emission and/or the short circuit current of the arc can be limited.

Abstract translation: 本文提供的用于限制场型电子发射器阵列中的电弧效应的系统和方法提高了这种阵列的鲁棒性。 场型电子发射器阵列通常具有基板，绝缘体和选通电极。 通过将电阻物质包括在发射极阵列的栅极中，电弧事件可以被隔离到单个发射极，使得阵列的剩余发射极可以继续电子发射和/或可以限制电弧的短路电流。

公开(公告)号：US20080074031A1

公开(公告)日：2008-03-27

申请号：US11903772

申请日：2007-09-24

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01J63/04 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

Abstract: An exemplary field emission display includes a first substrate (21) and a second substrate (22) being at opposite sides of the field emission display, a metal layer (210) disposed on an inner surface of the first substrate, a transparent electrode (221) disposed on an inner surface of the second substrate and spaced apart from the metal layer, a fluorescent layer (223) disposed on the transparent electrode, and a poly-silicon layer (212) disposed on the metal layer. The poly-silicon layer defines a plurality of tips (218) pointing toward the fluorescent layer. A method for manufacturing a field emission display is also provided.

Abstract translation: 示例性场发射显示器包括位于场发射显示器的相对侧的第一衬底（21）和第二衬底（22），设置在第一衬底的内表面上的金属层（210），透明电极（221） ），设置在所述第二基板的内表面上并与所述金属层隔开，设置在所述透明电极上的荧光层（223）和设置在所述金属层上的多晶硅层（212）。 多晶硅层限定指向荧光层的多个尖端（218）。 还提供了一种用于制造场致发射显示器的方法。

公开(公告)号：US20080042144A1

公开(公告)日：2008-02-21

申请号：US11889389

申请日：2007-08-13

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01L29/15

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的基板和设置在基板上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US20080029700A1

公开(公告)日：2008-02-07

申请号：US11831989

申请日：2007-08-01

Applicant: TADASHI FUJIEDA ,  Makoto Okai ,  Kishio Hidaka ,  Mitsuo Hayashibara ,  Shunichi Watanabe

Inventor： TADASHI FUJIEDA ,  Makoto Okai ,  Kishio Hidaka ,  Mitsuo Hayashibara ,  Shunichi Watanabe

IPC: H01J37/073 ,  H01J37/26 ,  H01J37/30

CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/3174 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2201/30484 ,  H01J2201/30488 ,  H01J2201/30496 ,  H01J2237/06341 ,  H01J2237/26

Abstract: The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.

Abstract translation: 本发明的目的是使得能够容易地调整由其上安装有由纤维状碳材料构成的电子枪的场发射电子枪的电子束的光轴。 此外，还要获得能量扩散比电子枪窄的电子束。 此外，还提供安装在其上的高分辨率电子束施加装置的场致发射电子枪。 用于实现本发明的目的的手段在于，在场发射电子枪中包括具有带隙的材料的纤维状碳材料包括由纤维状碳材料构成的电子源和用于 支撑纤维状碳材料，用于场发射电子的提取器和用于加速电子的加速器。 此外，还将场致发射电子枪应用于各种电子束施加装置。

公开(公告)号：US07319288B2

公开(公告)日：2008-01-15

申请号：US10811442

申请日：2004-03-26

Applicant: Liang Liu ,  Shoushan Fan

Inventor： Liang Liu ,  Shoushan Fan

IPC: H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J9/025 ,  H01J2201/30469

Abstract: A carbon nanotube-based field emission device in accordance with the invention includes: a cathode electrode (50), a carbon nanotube array (40) formed perpendicularly on the cathode electrode, a barrier (20) and a gate electrode (60). The carbon nanotube array has a growth end (42) electrically contacting with the cathode electrode, and an opposite root end (44) for emitting electrons therefrom. The root end of the carbon nanotube array defines a substantially planar surface having a flatness of less than 1 micron.

Abstract translation: 根据本发明的基于碳纳米管的场发射器件包括：阴极电极（50），垂直于阴极电极形成的碳纳米管阵列（40），阻挡层（20）和栅电极（60）。 碳纳米管阵列具有与阴极电接触的生长端（42）和用于从其发射电子的相对根端（44）。 碳纳米管阵列的根端限定了具有小于1微米的平坦度的基本平坦的表面。

公开(公告)号：US07307377B2

公开(公告)日：2007-12-11

申请号：US10952477

申请日：2004-09-29

Applicant: Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

Inventor： Natsuo Tatsumi ,  Akihiko Namba ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC: H01J1/02

CPC classification number: H01J63/02 ,  H01J1/3044 ,  H01J1/308

Abstract: The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Abstract translation: 本发明涉及具有有效发射电子的结构的电子发射器件。 电子发射器件具有由n型金刚石构成的衬底和设置在衬底上的尖突起。 突起包括设置在基板侧的基座和设置在基座上并从其尖端发射电子的电子发射部分。 底座由n型钻石组成。 电子发射部分由p型金刚石构成。 从突起（电子发射部分）的尖端到基底和电子发射部分之间的界面的长度优选为100nm以下。

公开(公告)号：US07256535B2

公开(公告)日：2007-08-14

申请号：US10833803

申请日：2004-04-28

Applicant: Jimmy L. Davidson ,  Wang Poo Kang ,  David V. Kerns ,  Mickey Evans Howell

Inventor： Jimmy L. Davidson ,  Wang Poo Kang ,  David V. Kerns ,  Mickey Evans Howell

IPC: H01J1/30 ,  H01J1/304 ,  H01J1/46

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G01L9/0041 ,  G01L9/0047 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0828 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/022 ,  H01J31/127 ,  H01J2201/30407 ,  H01J2201/30457

Abstract: Diamond microtip field emitters are used in triode vacuum microelectronic devices, sensors and displays. Diamond triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract translation: 金刚石微尖端场发射器用于三极管真空微电子器件，传感器和显示器。 可以制造具有整体阳极和栅格结构的金刚石三极管器件。 在制造工艺中在发射体上形成超尖尖，其中金刚石以两步沉积顺序沉积到模腔中。 在沉积金刚石期间，仔细控制碳石墨含量以增强排放性能。 尖端或发射器通过后制造处理来进一步提高性能。