SEMICONDUCTOR DEVICE MOUNTING STRUCTURE, BACKLIGHT DEVICE, AND MOUNTING SUBSTRATE
    25.
    发明申请
    SEMICONDUCTOR DEVICE MOUNTING STRUCTURE, BACKLIGHT DEVICE, AND MOUNTING SUBSTRATE 审中-公开
    半导体器件安装结构,背光装置和安装基板

    公开(公告)号:US20150342045A1

    公开(公告)日:2015-11-26

    申请号:US14718094

    申请日:2015-05-21

    Abstract: A semiconductor device mounting structure includes a semiconductor device and a mounting substrate. The semiconductor device includes a first external connection terminal and a device-side mounting insulating region. The first external connection terminal is provided at a first end and has a metal region on a semiconductor mounting surface of the semiconductor device. The device-side mounting insulating region is defined by the metal region on the semiconductor mounting surface. The semiconductor mounting surface faces a substrate mounting surface. The mounting substrate has on the substrate mounting surface a land pattern made of an electrically conductive material to be electrically connected to the first external connection terminal. The land pattern is provided in a first shape to surround the device-side mounting insulating region and includes a land-side insulating region which has a second shape to correspond to a periphery of the device-side mounting insulating region.

    Abstract translation: 半导体器件安装结构包括半导体器件和安装基板。 半导体器件包括第一外部连接端子和器件侧安装绝缘区域。 第一外部连接端子设置在第一端,并且在半导体器件的半导体安装表面上具有金属区域。 器件侧安装绝缘区域由半导体安装表面上的金属区域限定。 半导体安装表面面向基板安装表面。 安装基板在基板安装表面上具有由导电材料制成的焊盘图案,以电连接到第一外部连接端子。 所述焊盘图案设置成围绕所述器件侧安装绝缘区域的第一形状,并且包括具有与所述器件侧安装绝缘区域的周边相对应的第二形状的焊盘侧绝缘区域。

    Electrical connector, electrical connection system and lithographic apparatus
    26.
    发明授权
    Electrical connector, electrical connection system and lithographic apparatus 有权
    电气连接器,电气连接系统和光刻设备

    公开(公告)号:US09165814B2

    公开(公告)日:2015-10-20

    申请号:US14242156

    申请日:2014-04-01

    Abstract: An electrical connector comprises a high voltage pad and a high voltage plate. When connected to another electrical connector, the two plates, which are at the same voltage as the pads, form a region of high voltage in which the field is low. The pads are positioned in that region. An electrostatic clamp of an EUV lithographic apparatus may have such a pad and plate, for connecting to the electrical connector. By placing the interconnection in a low field region, triple points (points of contact between a conductor, a solid insulator and a gas) may be present in that region.

    Abstract translation: 电连接器包括高压焊盘和高压板。 当连接到另一个电连接器时,与焊盘处于相同电压的两个板形成场中低电压的区域。 垫位于该区域。 EUV光刻设备的静电夹具可以具有用于连接到电连接器的垫和板。 通过将互连置于低场区域中,可以在该区域中存在三个点(导体,固体绝缘体和气体之间的接触点)。

    Multi-layer micro-wire substrate structure
    27.
    发明授权
    Multi-layer micro-wire substrate structure 有权
    多层微线基板结构

    公开(公告)号:US09107316B2

    公开(公告)日:2015-08-11

    申请号:US14023740

    申请日:2013-09-11

    Abstract: A multi-layer micro-wire structure includes a substrate having a substrate edge. A first layer is formed over the substrate extending to a first layer edge. One or more first micro-channels are imprinted in the first layer, at least one imprinted first micro-channel having a micro-wire forming at least a portion of an exposed first connection pad in the first layer. A second layer is formed over the first layer extending to a second layer edge. One or more second micro-channels are imprinted in the second layer, at least one imprinted second micro-channel having a micro-wire forming at least a portion of an exposed second connection pad in the second layer. The second-layer edge is farther from the substrate edge than the first-layer edge for at least a portion of the second-layer edge so that the first connection pads are exposed through the second layer.

    Abstract translation: 多层微线结构包括具有基板边缘的基板。 第一层形成在延伸到第一层边缘的衬底上。 一个或多个第一微通道被印在第一层中,至少一个压印的第一微通道具有在第一层中形成暴露的第一连接焊盘的至少一部分的微线。 在延伸到第二层边缘的第一层上形成第二层。 一个或多个第二微通道被印在第二层中,至少一个压印的第二微通道具有在第二层中形成暴露的第二连接焊盘的至少一部分的微线。 对于第二层边缘的至少一部分,第二层边缘比第一层边缘离基板边缘更远,使得第一连接焊盘通过第二层曝光。

    WIRING SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING WIRING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    28.
    发明申请
    WIRING SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING WIRING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    配线基板,半导体器件,制造接线基板的方法及制造半导体器件的方法

    公开(公告)号:US20150223330A1

    公开(公告)日:2015-08-06

    申请号:US14561540

    申请日:2014-12-05

    Abstract: A wiring substrate includes a first multi-layer wiring layer having a stacked via structure including a first electrode pad, a second multi-layer wiring layer rinsing a non-stacked via structure including a second electrode pad. The second electrode pad is formed on an uppercut first insulating layer. The first electrode pad is formed on a second insulating layer which is located to a position lower by one layer than the first insulating layer, and the first electrode pad is arranged in an opening portion of the first insulating layer such that the upper face and the side face of the first electrode pad are exposed.

    Abstract translation: 布线基板包括具有层叠通孔结构的第一多层布线层,包括第一电极焊盘,漂洗包括第二电极焊盘的非堆叠通孔结构的第二多层布线层。 第二电极焊盘形成在上切第一绝缘层上。 第一电极焊盘形成在位于比第一绝缘层低一层的位置的第二绝缘层上,第一电极焊盘设置在第一绝缘层的开口部分中,使得上表面和 露出第一电极焊盘的侧面。

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