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公开(公告)号：US20180291226A1
公开(公告)日：2018-10-11
申请号：US15764420
申请日：2015-09-30
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Xue-hua Chen , Moses M. David , Zai-Ming Qiu , Garry W. Lachmansingh , William B. Kolb , Sonja S. Mackey , Xiaohai Sheng , Naiyong Jing , Richard J. Pokorny , Christopher S. Lyons , Yongjie Li
IPC: C09D133/00 , B05D1/26 , B05D3/06 , C23C16/22 , C09D4/00
Abstract: Multilayer barrier films and methods of making the films are provided. The films include a smooth layer and a barrier layer directly disposed on the smooth layer. In some cases, the smooth layer includes a thiol-ene material as a polymeric matrix material. In some cases, the films have a sandwich structure of barrier layer/smooth layer/substrate/smooth layer/barrier layer.
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公开(公告)号：US10011735B2
公开(公告)日：2018-07-03
申请号：US14419324
申请日：2013-03-01
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Thomas P. Klun , Alan K. Nachtigal , Joseph C. Spagnola , Mark A. Roehrig , Jennifer K. Schnobrich , Guy D. Joly , Christopher S. Lyons
IPC: H01L51/00 , C09D143/04 , C07F7/18 , H01L51/52 , H01L51/44 , H01L51/10 , B05D3/06 , B32B27/30 , C08J7/04 , C09D133/14 , B05D1/00 , B05D3/10 , C08K3/34 , C09D135/02 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , C08F130/08 , C09J133/14
CPC classification number: C09D143/04 , B05D1/60 , B05D3/067 , B05D3/068 , B05D3/101 , B32B27/308 , B32B2250/04 , B32B2307/7242 , B32B2307/7244 , C07F7/1804 , C08F130/08 , C08J7/045 , C08J2333/12 , C08K3/34 , C09D133/14 , C09D135/02 , C09J133/14 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , H01L51/004 , H01L51/107 , H01L51/448 , H01L51/5253 , Y10T428/1064 , Y10T428/31507 , Y10T428/31551 , Y10T428/31609 , Y10T428/31663
Abstract: Diurethane (meth)acrylate-silane precursor compounds prepared by reacting a primary or secondary aminosilane with a cyclic carbonate to yield a hydroxylalkylene-carbamoylalkylene-alkoxysilanes (referred to as a “hydroxylcarbamoylsilane”), which is reacted with a (meth)acrylated material having isocyanate functionality, either neat or in solvent, and optionally with a catalyst, such as a tin compound. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one diurethane (meth)acrylate-silane precursor compound. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the diurethane (meth)acrylate-silane and their use in composite films and electronic devices are described.
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公开(公告)号：US20180169697A1
公开(公告)日：2018-06-21
申请号：US15735293
申请日：2016-06-09
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Christopher A. Merton , Ta-Hua Yu , Christopher S. Lyons , Kam Poi Chia , Brent Beamer , Cedric Bedoya , Paul T. Engen , Amy Preszler Prince
CPC classification number: B05D1/60 , B05D3/144 , B32B15/08 , B32B15/085 , B32B15/09 , B32B15/20 , B32B27/08 , B32B27/14 , B32B27/28 , B32B27/281 , B32B27/285 , B32B27/286 , B32B27/30 , B32B27/302 , B32B27/304 , B32B27/306 , B32B27/308 , B32B27/32 , B32B27/327 , B32B27/36 , B32B27/365 , B32B2250/05 , B32B2250/20 , B32B2255/10 , B32B2255/20 , B32B2255/205 , B32B2255/24 , B32B2255/26 , B32B2255/28 , B32B2307/00 , B32B2307/20 , B32B2307/202 , B32B2307/21 , B32B2307/212 , B32B2307/304 , B32B2307/3065 , B32B2307/31 , B32B2307/412 , B32B2307/414 , B32B2307/7246 , B32B2607/00 , C23C14/081 , C23C14/205 , C23C14/34 , E04B1/803 , Y02A30/242 , Y02B80/12
Abstract: There is provided a barrier film having a substrate, a low thermal conductivity organic layer and an inorganic stack. The inorganic stack will include a low thermal conductivity non-metallic inorganic material layer and a high thermal conductivity metallic material layer.
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公开(公告)号：US20180141080A1
公开(公告)日：2018-05-24
申请号：US15570179
申请日：2016-06-22
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Seth M. Kirk , Jayshree Seth , Christopher S. Lyons , Brandon R. Pietz
IPC: B05D1/00 , B05D1/32 , B05D3/14 , B05D5/00 , B05D7/04 , B32B3/10 , B32B3/26 , B32B7/04 , B32B7/06 , B32B7/12 , B32B27/30
CPC classification number: B05D1/60 , B05D1/32 , B05D3/067 , B05D3/144 , B05D3/147 , B05D5/00 , B05D5/02 , B05D7/04 , B05D2320/00 , B05D2401/33 , B05D2502/00 , B32B3/10 , B32B3/263 , B32B7/05 , B32B7/06 , B32B7/12 , B32B27/308
Abstract: Discontinuous coatings and methods of forming such coatings including transiting a substrate through a vaporization area, providing a reactant vapor comprising at least one vaporized monomer or oligomer to the vaporization area, and chemically reacting the at least one vaporized monomer or oligomer to form a discontinuous layer on the substrate, optionally wherein chemically reacting further includes polymerization. The discontinuous layer may be a patterned, semi-patterned, or random discontinuous layer.
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35.发明授权公开(公告)号：US09790396B2
公开(公告)日：2017-10-17
申请号：US14416303
申请日：2013-03-01
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Thomas P. Klun , Alan K. Nachtigal , Joseph C. Spagnola , Mark A. Roehrig , Jennifer K. Schnobrich , Guy D. Joly , Christopher S. Lyons
IPC: C09D143/04 , C07F7/18 , H01L51/00 , H01L51/52 , H01L51/44 , H01L51/10 , B05D3/06 , B32B27/30 , C08J7/04 , C09D133/14 , B05D1/00 , B05D3/10 , C08K3/34 , C09D135/02 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , C08F130/08 , C09J133/14
CPC classification number: C09D143/04 , B05D1/60 , B05D3/067 , B05D3/068 , B05D3/101 , B32B27/308 , B32B2250/04 , B32B2307/7242 , B32B2307/7244 , C07F7/1804 , C08F130/08 , C08J7/045 , C08J2333/12 , C08K3/34 , C09D133/14 , C09D135/02 , C09J133/14 , C23C14/08 , C23C14/34 , C23C16/40 , C23C16/44 , H01L51/004 , H01L51/107 , H01L51/448 , H01L51/5253 , Y10T428/1064 , Y10T428/31507 , Y10T428/31551 , Y10T428/31609 , Y10T428/31663
Abstract: Urethane (multi)-(meth)acrylate (multi)-silane compositions, and articles including a (co)polymer reaction product of at least one urethane (multi)-(meth)acrylate (multi)-silane precursor compound. The disclosure also articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urethane (multi) (meth)acrylate (multi)-silane precursor compound. The substrate may be a (co)polymeric film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making urethane (multi)-(meth)acrylate (multi)-silane precursor compounds and their use in composite multilayer barrier films are also described. Methods of using such barrier films in articles selected from a solid state lighting device, a display device, and combinations thereof, are also described.
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Patent Agency Ranking
公开(公告)号：US20150294793A1
公开(公告)日：2015-10-15
申请号：US14646637
申请日：2013-11-21
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Dipankar Ghosh , Christopher S. Lyons , Robin E. Gorrell , Stephen P. Maki
CPC classification number: H01G4/33 , H01G4/20 , H01G4/206 , H01L28/56 , H05K1/036 , H05K1/0393 , H05K1/162 , H05K3/022 , H05K2201/0179 , H05K2201/0195 , H05K2203/1366
Abstract: A multilayer dielectric film including a first dielectric layer made from a material having a first breakdown field strength and a second dielectric layer disposed on the first dielectric layer made from a material having a different breakdown filed strength. A multilayer film including a first electrically conductive layer, the first dielectric layer disposed on the first electrically conductive layer, the second dielectric layer disposed on the first dielectric layer, and a second electrically conductive layer disposed on the second dielectric layer is also disclosed. The first electrically conductive layer can have at least one of an average surface roughness of at least ten nanometers, a thickness of at least ten micrometers, or an average visible light transmission of up to ten percent. The first dielectric layer may be a polymer and typically has a lower dielectric constant than the second dielectric layer, which may be ceramic.
Abstract translation: 一种多层电介质膜，包括由具有第一击穿场强的材料制成的第一电介质层和设置在具有不同击穿场强的材料制成的第一电介质层上的第二电介质层。 还公开了一种多层膜，其包括第一导电层，设置在第一导电层上的第一介电层，设置在第一介电层上的第二介电层和设置在第二介电层上的第二导电层。 第一导电层可以具有至少10纳米的平均表面粗糙度，至少10微米的厚度或高达10％的平均可见光透射率中的至少一个。 第一介电层可以是聚合物，并且通常具有比可以是陶瓷的第二介电层更低的介电常数。
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公开(公告)号：US12263656B2
公开(公告)日：2025-04-01
申请号：US17250995
申请日：2019-11-08
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Henrik B. van Lengerich , Karl K. Stensvad , Edwin L Kusilek , Matthew S. Stay , Caleb T. Nelson , Christopher S. Lyons , Moses M. David , Jeffrey L. Solomon , Martin B. Wolk , Nicholas C. Erickson , James Zhu , James M. Nelson
Abstract: Materials and methods useful in forming nano-scale features on substrates, and articles such as optical films incorporating such nano-scale patterned substrates.
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38.发明授权公开(公告)号：US12157941B2
公开(公告)日：2024-12-03
申请号：US18559484
申请日：2022-03-09
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Sean M. Sweetnam , Stephen P. Maki , Timothy J. Hebrink , Daniel M. Pierpont , Mark D. Weigel , David J. Rowe , Brandon R. Pietz , Christopher S. Lyons , Kevin D. Hagen
Abstract: Barrier films including a (co)polymeric substrate, at least one dyad on the substrate, each dyad made of a (co)polymer layer and an oxide layer overlaying the (co)polymer layer, and an outer (co)polymer layer overlaying the dyads. Optionally, at least one outer oxide layer overlays the outer (co)polymer layer. The barrier films transmit visible light and transmits, at an incident light angle of at least one of 0°, 30°, 45°, 60°, or 75°, at most 70 percent of incident ultraviolet light at a wavelength range from at least 100 nanometers to 400 nanometers or in a wavelength range from at least 100 nm to 350 nm. The barrier films exhibit atomic oxygen degradation of less than 1×10−20 mg/atom. The barrier films may be applied to decorative objects or electronic devices, (e.g., light receiving or emitting devices, in a satellite or aircraft. Methods of making the barrier films also are disclosed.
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39.发明公开公开(公告)号：US20240043989A1
公开(公告)日：2024-02-08
申请号：US18259214
申请日：2021-12-28
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Matthew R.D. Smith , David J. Tarnowski , Myungchan Kang , Caleb T. Nelson , Henrik B. van Lengerich , Christopher S. Lyons , Jeffrey L. Solomon , Bing Hao , Karl K. Stensvad
CPC classification number: C23C14/5873 , C23C14/046 , C23C14/205
Abstract: Metallic nanohole (23) arrays on nanowells (22) with a controlled depth and methods of making and using the same are provided. A mesh pattern of metallic layer (8) having an array of nanoholes is provided on an array of nanowells, aligned with the openings of the respective nanowells. The aspect ratios (D:W) of the nanowells are controlled to control the deposition of metal into the nanowells.
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公开(公告)号：US20240004282A1
公开(公告)日：2024-01-04
申请号：US18255695
申请日：2021-12-15
Applicant: 3M INNOVATIVE PROPERTIES COMPANY
Inventor： Martin B. Wolk , Robert L. Brott , Kevin W. Gotrik , Christopher S. Lyons , Caleb T. Nelson , Vadim Savvateev , James M. Nelson , Craig R. Schardt , Jeffrey L. Solomon , Karl K. Stensvad , Steven D. Theiss
CPC classification number: G03F1/20 , G03F7/094 , G03F7/36 , G02B6/02085
Abstract: A structured film for forming a pattern on a substrate includes a polymeric support layer, an adhesive layer, an etch resist layer disposed between the polymeric support layer and the adhesive layer, a structured resin layer disposed between the polymeric support layer and the etch resist layer, and one or more unstructured layers disposed between the etch resist layer and the adhesive layer. The structured resin layer has a structured major surface including a plurality of engineered structures. The etch resist layer at least partially fills spaces between adjacent engineered structures to substantially planarize the structured major surface. Methods of using the structured film to form a pattern on a substrate are described.
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