公开(公告)号：US09878899B2

公开(公告)日：2018-01-30

申请号：US14873243

申请日：2015-10-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Lee-Chuan Tseng ,  Chang-Ming Wu ,  Shih-Chang Liu ,  Yuan-Chih Hsieh

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/001 ,  B81C1/0092 ,  B81C1/00936 ,  B81C1/00944 ,  B81C1/00952 ,  B81C1/0096 ,  B81C1/00984 ,  B81C1/00992 ,  B81C2201/0132 ,  B81C2201/056

Abstract: The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.

公开(公告)号：US20170197825A1

公开(公告)日：2017-07-13

申请号：US15468682

申请日：2017-03-24

Applicant: MEMS DRIVE, INC.

Inventor： Roman Gutierrez ,  Tony Tang ,  Xiaolei Liu ,  Matthew Ng ,  Guiqin Wang

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B2201/033 ,  B81C1/00619 ,  B81C99/0095 ,  B81C2201/0132 ,  B81C2201/056

Abstract: A simplified MEMS fabrication process and MEMS device is provided that allows for cheaper and lighter-weight MEMS devices to be fabricated. The process comprises etching a plurality of holes or other feature patterns into a MEMS device, and then etching away the underlying wafer such that, after the etching process, the MEMS device is the required thickness and the individual die are separated, avoiding the extra steps of wafer thinning and die dicing. By etching trenches into the substrate wafer and filling them with a MEMS base material, sophisticated taller MEMS devices with larger force may be made.

公开(公告)号：US20170113925A1

公开(公告)日：2017-04-27

申请号：US15297662

申请日：2016-10-19

Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives

Inventor： Patrice REY

IPC: B81C1/00

CPC classification number: B81C1/0023 ,  B81C1/00333 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/0126 ,  B81C2201/014 ,  B81C2201/056 ,  B81C2203/01 ,  B81C2203/0792

Abstract: Method for encapsulation of a microelectronic component, including making of a portion of sacrificial material on a front face of a first substrate in which the component is intended to be made, then making of a cover encapsulating the portion of sacrificial material, then making of the component by etching the first substrate from its back face, such that part of the component is arranged to face the portion of sacrificial material and such that the portion of sacrificial material is accessible from a back face of the component, then elimination of the portion of sacrificial material by etching from the back face of the component, then securing of the back face of the component to a second substrate.

公开(公告)号：US20160355397A1

公开(公告)日：2016-12-08

申请号：US15243031

申请日：2016-08-22

Applicant: Semiconductor Manufacturing International Corporation

Inventor： Emmanuel P. Quevy ,  Louis Nervegna ,  Jeremy R. Hui

IPC: B81C1/00 ,  G01N27/22

CPC classification number: B81C1/00246 ,  B81B3/0021 ,  B81B7/007 ,  B81B7/0077 ,  B81B7/008 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00333 ,  B81C1/0038 ,  B81C2201/0105 ,  B81C2201/056 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0172 ,  B81C2203/019 ,  B81C2203/0735 ,  G01N27/223 ,  G01N27/227

Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.

Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。

公开(公告)号：US20150183635A1

公开(公告)日：2015-07-02

申请号：US14141875

申请日：2013-12-27

Applicant: Kyu Oh Lee ,  Sasha N. OSTER ,  Feras EID ,  Sarah HANEY

Inventor： Kyu Oh Lee ,  Sasha N. OSTER ,  Feras EID ,  Sarah HANEY

IPC: B81B7/00 ,  B81C1/00

CPC classification number: G05D16/2026 ,  B81B3/0027 ,  B81B7/007 ,  B81B7/008 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/094 ,  B81C1/00158 ,  B81C1/00238 ,  B81C1/00246 ,  B81C1/00333 ,  B81C1/00547 ,  B81C2201/056 ,  B81C2203/0172 ,  B81C2203/0714 ,  B81C2203/0792

Abstract: The integration of pressure or inertial sensors into an integrated circuit fabrication and packaging flow is described. In one example, a diaphragm is formed by depositing a metal over a first dielectric layer. A second dielectric layer is formed over the diaphragm. A metal mesh layer is formed over the second dielectric. The first dielectric layer is etched under the diaphragm to form a cavity. The cavity is lined with a sealing layer. The cavity is covered to form a chamber adjoining the diaphragm, and the cover is sealed against the cavity.

Abstract translation: 描述了将压力或惯性传感器集成到集成电路制造和封装流程中。 在一个示例中，通过在第一介电层上沉积金属来形成隔膜。 在隔膜上形成第二电介质层。 在第二电介质上形成金属网层。 第一介电层在隔膜下蚀刻形成空腔。 空腔内衬密封层。 空腔被覆盖以形成邻近隔膜的室，并且盖被密封抵靠空腔。

公开(公告)号：US20140339659A1

公开(公告)日：2014-11-20

申请号：US14452756

申请日：2014-08-06

Applicant: Renesas Electronics Corporation

Inventor： Koichi Arai

IPC: B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/00 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00896 ,  B81C3/00 ,  B81C2201/056 ,  G01L9/0042 ,  G01L19/06 ,  H01L29/84 ,  H01L2224/13 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor integrated circuit device having an MEMS element over a single semiconductor chip, the movable part of the MEMS element is fixed before the formation of a rewiring. After formation of the rewiring, the wafer is diced. Then, the movable part of the MEMS element is released by etching the wafer.

Abstract translation: 在制造在单个半导体芯片上具有MEMS元件的半导体集成电路器件的方法中，MEMS元件的可移动部件在形成重新布线之前被固定。 在重新布线形成之后，晶片被切割。 然后，通过蚀刻晶片来释放MEMS元件的可移动部分。

公开(公告)号：US20090152655A1

公开(公告)日：2009-06-18

申请号：US12280669

申请日：2007-02-23

Applicant: Richard Ian Laming ,  Anthony Traynor

Inventor： Richard Ian Laming ,  Anthony Traynor

IPC: H01L27/00 ,  H01L21/00

CPC classification number: B81C1/00158 ,  B81B3/0027 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C1/00904 ,  B81C2201/056 ,  G01L9/0073 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04

Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11); depositing a first electrode (15) that is operably coupled with the electronic circuit (11); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

Abstract translation: 在基板（10）上制造微机电系统（MEMS）装置的方法包括以下步骤：处理基板（10）以制造电子电路（11）; 沉积与电子电路（11）可操作地耦合的第一电极（15）; 沉积膜（16），使得其机械耦合到第一电极（15）; 施加牺牲层（50）; 沉积与电子电路（11）可操作地耦合的结构层（18）和第二电极（17），使得牺牲层（50）设置在膜（16）和结构层（18）之间，以便 形成初步结构; 分离衬底（10）; 以及去除所述牺牲层以形成MEMS结构，其中在去除所述牺牲层（50）的步骤之前执行对所述衬底（10）进行单分割的步骤。

公开(公告)号：US07172978B2

公开(公告)日：2007-02-06

申请号：US10895477

申请日：2004-07-21

Applicant: Hang Liao ,  Timothy Mellander ,  Mike Groh

Inventor： Hang Liao ,  Timothy Mellander ,  Mike Groh

IPC: H01L21/31 ,  H01L21/469

CPC classification number: B81C1/00801 ,  B81C2201/0197 ,  B81C2201/053 ,  B81C2201/056

Abstract: A method of depositing polymer thin films on a MEMS device having a wafer stack includes depositing one or more protection films on a polymer thin film layer on the wafer stack, fabricating the MEMS device, and removing the one or more protection films.

Abstract translation: 在具有晶片堆叠的MEMS器件上沉积聚合物薄膜的方法包括在晶片叠层上的聚合物薄膜层上沉积一个或多个保护膜，制造MEMS器件，以及去除一个或多个保护膜。

公开(公告)号：US20060014312A1

公开(公告)日：2006-01-19

申请号：US11229968

申请日：2005-09-19

Applicant: Joshua Malone

Inventor： Joshua Malone

IPC: H01L21/00

CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

公开(公告)号：US06956283B1

公开(公告)日：2005-10-18

申请号：US10606525

申请日：2003-06-26

Applicant: Kenneth A. Peterson

Inventor： Kenneth A. Peterson

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/56 ,  H01L23/02 ,  H01L23/31 ,  H01L23/40 ,  H01L23/48 ,  H01L23/49 ,  H01L23/52

CPC classification number: B81C1/00801 ,  B81B7/0025 ,  B81B2207/115 ,  B81C1/00333 ,  B81C2201/053 ,  B81C2201/056 ,  H01L21/56 ,  H01L23/3121 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49175 ,  H01L2224/8192 ,  H01L2224/85203 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/06 ,  H01L2924/00

Abstract: The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a “package first, release later” manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.

Abstract translation: 本发明涉及通过“封装第一，后续释放”制造方案中的一个或多个释放或激活步骤来保护MEMS或微传感器器件的方法：该制造方法允许引线键合，其它互连，封装材料，线，接合垫 ，以及芯片上的其他结构，以防止在释放蚀刻或其他包装步骤期间的物理，化学或电学损伤。 器件上的金属结构（例如金，铝，铜）也可以保护免受电流攻击，因为它们不受HF或含HCL的溶液的接触。