公开(公告)号：US20110315890A1

公开(公告)日：2011-12-29

申请号：US13226931

申请日：2011-09-07

Applicant: DIETER WINKLER ,  Thomas Jasinski

Inventor： DIETER WINKLER ,  Thomas Jasinski

IPC: H01J27/02 ,  B23P11/00

CPC classification number: F25D19/006 ,  F25B2500/13 ,  H01J27/26 ,  H01J37/08 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/061 ,  H01J2237/0807 ,  Y10T29/49826

Abstract: A gas field ion source is described for a charged particle beam device having a charged particle beam column. The gas field ion source includes an emitter unit, a cooling unit, and a thermal conductivity unit for thermal conductivity from the cooling unit to the emitter unit, wherein the thermal conductivity unit is adapted for reduction of vibration transfer from the cooling unit to the emitter unit.

Abstract translation: 对具有带电粒子束柱的带电粒子束装置描述了气体场离子源。 气体离子源包括发射器单元，冷却单元和用于从冷却单元到发射器单元的导热性的导热单元，其中导热单元适于减少从冷却单元到发射极的振动传递 单元。

公开(公告)号：US08071958B2

公开(公告)日：2011-12-06

申请号：US12268524

申请日：2008-11-11

Applicant: Thomas N. Horsky ,  Dale C. Jacobson

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: H01J49/10 ,  H01J49/14 ,  H01J27/02

CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract translation: 一种制造半导体器件的方法包括以下步骤：向离子化室提供含有多个掺杂剂原子的分子，将所述分子电离成掺杂剂簇离子，用电场提取和加速掺杂剂簇离子，选择 通过质量分析获得所需的簇离子，通过后分析离子光学器件改变簇离子的最终注入能量，以及将掺杂剂簇离子注入到半导体衬底中。 通常，掺杂剂分子含有n个掺杂剂原子，其中n是大于10的整数。这种方法可以将掺杂剂剂量率增加到n次注入电流，每个掺杂剂原子能量的等效量为簇注入能量的1 / n倍 ，同时减少每个掺杂剂原子的电荷乘以因子n。

公开(公告)号：US20110248179A1

公开(公告)日：2011-10-13

申请号：US13082983

申请日：2011-04-08

Applicant: Joseph M. Matesa, Jr. ,  Paul E. Fischione

Inventor： Joseph M. Matesa, Jr. ,  Paul E. Fischione

IPC: H01J3/20

CPC classification number: H01J37/08 ,  H01J27/04 ,  H01J37/3056 ,  H01J2237/061 ,  H01J2237/0815

Abstract: An ion source is disclosed which utilizes independently powered electrodes that are isolated with a series of insulators. The ion source comprises an anode electrode with a hollow interior, where the anode is disposed between a cathode and an anti-cathode. A magnet or electro-magnet imposes a magnetic field in an axial direction through the bore of the anode. Gas is introduced into the anode area at a controllable pressure. The ion source includes a first voltage differential between the anode and cathode for the production of plasma and a second voltage differential between the anode and the anti-cathode for extraction of ions from the plasma, forming an ion beam, which is preferably of a narrow diameter at low beam energy. In particular, the voltage differential between the anti-cathode and anode is adjusted to control the initial beam divergence of extracted ions. An optional focus electrode with an independent power supply further focuses the ion beam. A final electrode defines the output boundary of the ion source to provide un-perturbed drift of the ions into the vacuum chamber.

Abstract translation: 公开了一种离子源，其利用与一系列绝缘体隔离的独立供电的电极。 离子源包括具有中空内部的阳极电极，其中阳极设置在阴极和反阴极之间。 磁体或电磁铁通过阳极的孔沿轴向施加磁场。 气体以可控的压力被引入阳极区域。 离子源包括用于产生等离子体的阳极和阴极之间的第一电压差和用于从等离子体提取离子的阳极和反阴极之间的第二电压差，形成离子束，其优选地为窄 直径在低光束能量。 特别地，调整反阴极和阳极之间的电压差以控制提取的离子的初始光束发散。 具有独立电源的可选聚焦电极进一步聚焦离子束。 最终电极定义了离子源的输出边界，以提供离子到真空室中的无扰动漂移。

公开(公告)号：US20110226969A1

公开(公告)日：2011-09-22

申请号：US13102321

申请日：2011-05-06

Applicant: Thomas N. Horsky ,  Dale C. Jacobson

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: G21K5/00

CPC classification number: H01L21/26513 ,  H01J27/20 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/304 ,  H01L21/2658 ,  H01L21/3215 ,  H01L21/67213 ,  H01L21/823814 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/66575

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx−, where 10≦n≦100 and 0≦x≦n+4.

Abstract translation: 描述了离子注入装置和制造半导体器件的方法，其中注入离子化硼氢化物分子簇以形成P型晶体管结构。 例如，在互补金属氧化物半导体（CMOS）器件的制造中，植入簇以提供用于源极和漏极结构的P型掺杂以及对于多栅极; 这些掺杂步骤对于PMOS晶体管的形成至关重要。 分子簇离子具有化学形式BnHx +和BnHx-，其中10＆nlE; n＆nlE; 100和0＆nlE; x＆nlE; n + 4。

公开(公告)号：US07989784B2

公开(公告)日：2011-08-02

申请号：US12494270

申请日：2009-06-30

Applicant: Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

Inventor： Hilton Glavish ,  Geoffrey Ryding ,  Theodore H. Smick ,  Kenneth Harry Purser

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/20 ,  H01J2237/057 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/166 ,  H01J2237/2001 ,  H01J2237/2006 ,  H01J2237/201 ,  H01J2237/202

Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.

Abstract translation: 用于从硅晶片剥离硅的氢离子注入机使用大的扫描轮，围绕其周边承载50个以上的晶圆并围绕一个轴线旋转。 在一个实施例中，车轮的旋转轴线是固定的，并且带状的氢离子束被向下指向车轮的周缘。 带状束在轮上的晶片的整个径向宽度上延伸。 光束由离子源产生，提供具有至少100mm主横截面直径的抽出的带状束。 带状光束可以穿过将光束弯曲在色带平面中的90°弯曲磁体。 磁体在色带上提供强度校正，以补偿从轮轴的径向距离对晶片的一部分通过带状束的速度的依赖性。

公开(公告)号：US20110089333A1

公开(公告)日：2011-04-21

申请号：US12902391

申请日：2010-10-12

Applicant: Keith Ferrara ,  David Barkus ,  Adam Patkin ,  Rosario Mannino ,  Daniel Pentek ,  Frank DeLorenzo ,  Barton Rasmussen

Inventor： Keith Ferrara ,  David Barkus ,  Adam Patkin ,  Rosario Mannino ,  Daniel Pentek ,  Frank DeLorenzo ,  Barton Rasmussen

IPC: H01J3/14

CPC classification number: H01J49/068 ,  H01J3/38 ,  H01J27/022 ,  H01J49/067 ,  H01J49/10 ,  H01J49/26 ,  H01J2237/061

Abstract: Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly.

Abstract translation: 本文描述的某些实施例涉及可用于对准源壳体中的源组件的部件的装置。 在一些示例中，可以使用配置成通过相应对准特征耦合到壳体的终端镜头来将源组件保持在源壳体中以提供源组件。

公开(公告)号：US07812321B2

公开(公告)日：2010-10-12

申请号：US12137225

申请日：2008-06-11

Applicant: Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

Inventor： Peter Kurunczi ,  Rajesh Dorai ,  Costel Biloiu ,  Wilhelm Platow

IPC: H01J27/00 ,  H01J27/24 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J27/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/304

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定示例性实施例中，可以将技术实现为用于离子注入的装置，其包括以多种模式操作的离子源，使得第一模式是电弧放电模式，而第二模式是RF模式。

公开(公告)号：US20100155619A1

公开(公告)日：2010-06-24

申请号：US12340812

申请日：2008-12-22

Applicant: John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

Inventor： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

IPC: H01J27/00 ,  H01J27/02

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/061

Abstract: In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.

Abstract translation: 在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。

公开(公告)号：US20100148088A1

公开(公告)日：2010-06-17

申请号：US12708216

申请日：2010-02-18

Applicant: Svetlana Radovanov ,  Bon-Woong Koo ,  Frank Sinclair ,  Victor M. Benveniste

Inventor： Svetlana Radovanov ,  Bon-Woong Koo ,  Frank Sinclair ,  Victor M. Benveniste

IPC: H01J27/02

CPC classification number: H01J27/08 ,  H01J27/16 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/082

Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.

Abstract translation: 公开了提供多模离子源的技术。 在一个特定的示例性实施例中，可以将技术实现为用于离子注入的装置，该装置包括具有热阴极和高频等离子体发生器的离子源，其中离子源具有多种操作模式。

公开(公告)号：US20090314952A1

公开(公告)日：2009-12-24

申请号：US12374789

申请日：2007-07-26

Applicant: Jens Peters ,  Hans-Hinrich Sahling ,  Ingo Hansen

Inventor： Jens Peters ,  Hans-Hinrich Sahling ,  Ingo Hansen

IPC: H01J27/00

CPC classification number: H01J27/028 ,  H01J37/08 ,  H01J2237/0213 ,  H01J2237/061 ,  H01J2237/0817 ,  H01J2237/31701

Abstract: An ion source for generating negatively charged ions is presented and described, said ion source having a closure plate which is provided with an outlet opening and which has a wall which surrounds a combustion chamber, wherein the wall has a tubular section, which extends from the outlet opening and is formed from an insulating material, and has a rear wall, wherein the rear wall is arranged at the end of the tubular section which lies opposite the outlet opening and closes off the combustion chamber, having a coupling coil whose windings are arranged around the tubular section of the wall outside the combustion chamber, and having a filter field magnet. The problem of making available an ion source for generating negatively charged ions which has an increased yield and is also suitable for generating ions from substances which are only available in a gaseous form is solved by virtue of the fact that the rear wall is formed from an insulating material and has an inlet opening, and in that the filter field magnet is arranged on that side of the tubular section which faces away from the combustion chamber.

Abstract translation: 提出并描述了用于产生带负电荷的离子的离子源，所述离子源具有闭合板，所述闭合板设置有出口开口，所述闭合板具有包围燃烧室的壁，其中所述壁具有管状部分， 出口开口并由绝缘材料形成，并具有后壁，其中后壁布置在与出口开口相对的管状部分的端部处，并且封闭燃烧室，具有其绕组布置的耦合线圈 围绕燃烧室外部的壁的管状部分，并具有过滤器磁场。 提供产生带负电荷的离子源的离子源的问题是通过以下事实来解决的，即离子源具有增加的产量并且也适用于从只能以气体形式获得的物质产生离子的问题，由于后壁由 绝缘材料并具有入口开口，并且所述过滤器磁体被布置在所述管状部分背离所述燃烧室的一侧。