公开(公告)号：US07863581B2

公开(公告)日：2011-01-04

申请号：US12135464

申请日：2008-06-09

Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J27/028 ,  H01J27/26 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31749

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract translation: 一种用于产生负离子的装置，包括涂覆有离子液体室温熔融盐的发射体，位于发射极下游的电极，相对于电极向发射极施加电压的电源。 电源足以产生稳定的高亮度的负离子束，该束具有在光束中最小的色差和球面像差。 静电透镜和偏转器用于聚焦并将光束引导到目标。

公开(公告)号：US07767977B1

公开(公告)日：2010-08-03

申请号：US12417929

申请日：2009-04-03

Applicant: Ludovic Godet ,  Svetlana Radovanov ,  Timothy J. Miller

Inventor： Ludovic Godet ,  Svetlana Radovanov ,  Timothy J. Miller

IPC: H01J49/10 ,  H01J37/08 ,  H01J23/06

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J2237/0451 ,  H01J2237/0453 ,  H01J2237/0456 ,  H01J2237/065 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/31 ,  H01J2237/31701 ,  Y10S438/961

Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Abstract translation: 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。

公开(公告)号：US07700931B2

公开(公告)日：2010-04-20

申请号：US11674262

申请日：2007-02-13

Applicant: Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

Inventor： Hiroyasu Shichi ,  Satoshi Tomimatsu ,  Noriyuki Kaneoka ,  Kaoru Umemura ,  Koji Ishiguro

IPC: G21K5/10 ,  H01J37/08 ,  A61N5/00 ,  G21G5/00 ,  G21K7/00 ,  G01N23/00

CPC classification number: H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage. The ion beam processing apparatus is structured so that a segment drawn by projecting the axis, along which the ion beam is drawn out of the ion source, on a plane perpendicular to the ion beam irradiation axis can be at least substantially parallel to a segment drawn by projecting the tilting axis of the second sample stage on the plane perpendicular to the ion beam irradiation axis.

Abstract translation: 本发明提供了一种离子束处理技术，用于提高使用离子束处理样品的一部分的精度，而不需要比常规所需的处理时间长的处理时间，并且缩短了分离微测试件所需的时间，而没有 打破样品或准备分离所需的时间。 离子束处理装置被构造成使得离子束从离子源拉出的轴和离子束照射到安装在第一样品台上的样品的离子束照射轴将以一定角度相遇 。 此外，离子束处理装置具有通过旋转第二样品台而使离子束照射到样品上的照射角度的倾斜能力，通过进行离子束处理从样品中提取试验片 围绕第二样品台的倾斜轴安装。 离子束处理装置被构造成使得通过将离子束从离子源拉出的轴在垂直于离子束照射轴线的平面上突出的拉伸而绘制的区段可以至少基本上平行于拉伸的区段 通过将第二样品台的倾斜轴投影在垂直于离子束照射轴的平面上。

公开(公告)号：US07687784B2

公开(公告)日：2010-03-30

申请号：US12126312

申请日：2008-05-23

Applicant: Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

Inventor： Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

IPC: H01J7/24 ,  H01J27/02 ,  H01J49/10

CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/08 ,  H01J2237/24585

Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Abstract translation: 注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。 因此，浅离子注入的植入效率因此增加。

公开(公告)号：US20100047519A1

公开(公告)日：2010-02-25

申请号：US12523956

申请日：2008-01-22

Applicant: Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

Inventor： Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

IPC: C01B31/06 ,  C30B33/12

CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

Abstract: The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.

Abstract translation: 本发明涉及一种制造金刚石表面的方法，包括以下步骤：提供原始金刚石表面，使原始金刚石表面进行等离子体蚀刻以从原始表面去除至少2nm的材料并产生等离子体蚀刻表面， 蚀刻表面的蚀刻表面的最大深度被去除的位置处的等离子体蚀刻表面的粗糙度Rq满足以下条件中的至少一个：等离子体蚀刻表面的Rq小于原件的Rq的粗糙度的1.5倍 等离子体蚀刻表面的表面或Rq小于1nm。

公开(公告)号：US20100012491A1

公开(公告)日：2010-01-21

申请号：US12523949

申请日：2008-01-22

Applicant: Geoffrey Alan Scarsbrook

Inventor： Geoffrey Alan Scarsbrook

IPC: G01N27/30 ,  C25B11/04 ,  B05D5/12

CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

Abstract: The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.

Abstract translation: 本发明涉及金刚石材料，其包括在所述第一表面上具有第一表面和硼掺杂单晶金刚石导电层的硼掺杂单晶金刚石基底层，其中导电层中硼的分布比分布 硼在基底层中。

公开(公告)号：US20090314962A1

公开(公告)日：2009-12-24

申请号：US12143144

申请日：2008-06-20

Applicant: Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

Inventor： Rajesh DORAI ,  Peter F. Kurunczi ,  Alexander S. Perel ,  Wilhelm P. Platow

IPC: H01J37/08 ,  G02B5/00

CPC classification number: H01J37/3171 ,  H01J37/04 ,  H01J37/08 ,  H01J37/09 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An electrode assembly for use with an ion source chamber or as part of an ion implanter processing system to provide a uniform ion beam profile. The electrode assembly includes an electrode having an extraction slot with length L aligned with an aperture of the ion source chamber for extracting an ion beam. The electrode includes a plurality of segments partitioned within the length of the extraction slot where each of the segments is configured to be displaced in at least one direction with respect to the ion beam. A plurality of actuators are connected to the plurality of electrode segments for displacing one or more of the segments. By displacing at least one of the plurality of electrode segments, the current density of a portion of the ion beam corresponding to the position of the segment within the extraction slot is modified to provide a uniform current density beam profile associated with the extracted ion beam.

Abstract translation: 一种与离子源室一起使用或作为离子注入机处理系统的一部分以提供均匀离子束分布的电极组件。 电极组件包括具有长度为L的提取槽的电极，其与用于提取离子束的离子源室的孔径对准。 电极包括在提取槽的长度内分隔的多个段，其中每个段被配置为相对于离子束在至少一个方向上移位。 多个致动器连接到多个电极段，用于移动一个或多个段。 通过移位多个电极段中的至少一个，修改与提取槽内的段的位置相对应的一部分离子束的电流密度，以提供与提取的离子束相关联的均匀的电流密度波束轮廓。

公开(公告)号：US07566887B2

公开(公告)日：2009-07-28

申请号：US11648979

申请日：2007-01-03

Applicant: Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

Inventor： Yongzhang Huang ,  Que Weiguo ,  Zhang Jincheng

IPC: G21K5/00

CPC classification number: H01J37/248 ,  H01J37/045 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/0432 ,  H01J2237/08

Abstract: The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种束控制电路和方法，用于通过降低离子束的占空比来最小化离子注入系统中的颗粒污染。 在一个实施例中，光束控制电路包括与电源和离子注入系统的离子源部分串联连接的高电压开关，其中开关可操作以中断或重新建立电源和电源之间的连接 离子源包括用于等离子体生产的电极。 光束控制电路还包括开关控制器，其可操作以通过在离子注入开始之前控制开关闭合并且在完成植入之后或在不需要光束的其他时间来控制离子束的占空因数， 从而最大程度地减少波束占空比和颗粒污染。 光束控制技术可以应用于晶片掺杂注入和占空因数降低。 高压开关的保护电路可以吸收反应性元件的能量并夹紧任何过电压。

公开(公告)号：US20090032724A1

公开(公告)日：2009-02-05

申请号：US12135464

申请日：2008-06-09

Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

IPC: H01J3/18

CPC classification number: H01J37/08 ,  H01J27/028 ,  H01J27/26 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31749

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract translation: 一种用于产生负离子的装置，包括涂覆有离子液体室温熔融盐的发射体，位于发射极下游的电极，相对于电极向发射极施加电压的电源。 电源足以产生稳定的高亮度的负离子束，该束具有在光束中最小的色差和球面像差。 静电透镜和偏转器用于聚焦并将光束引导到目标。

公开(公告)号：US20080305598A1

公开(公告)日：2008-12-11

申请号：US11759768

申请日：2007-06-07

Applicant: Thomas N. Horsky ,  Dale C. Jacobson

Inventor： Thomas N. Horsky ,  Dale C. Jacobson

IPC: H01L21/26 ,  H01L21/336

CPC classification number: H01L21/26513 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/082 ,  H01L21/26566 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+and are formed from carborane cluster molecules of the form C2B10H12 ,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

Abstract translation: 描述了离子注入装置和制造半导体器件的方法，其中将离子化的碳硼烷簇离子注入到半导体衬底中以进行衬底的掺杂。 碳硼烷簇离子具有C2B10Hx +，C2B8Hx +和C4B18Hx +的化学形式，并由C2B10H12，C2B8H10和C4B18H22形式的碳硼烷簇分子形成。这种碳硼烷分子簇的使用在较低的注入能量下导致较高的掺杂浓度，以提供高剂量低 能量植入物。 根据本发明的一个方面，碳硼烷簇分子可以通过直接电子轰击电离或通过等离子体离子化。