公开(公告)号：US20160155602A1

公开(公告)日：2016-06-02

申请号：US14901506

申请日：2014-07-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsushi KAMINO ,  Hisayuki TAKASU ,  Hirobumi MUTO

IPC: H01J37/08 ,  H01J37/305 ,  H01J37/20 ,  H01J37/16 ,  H01J37/18

CPC classification number: H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/006 ,  H01J2237/06 ,  H01J2237/08 ,  H01J2237/182 ,  H01J2237/1825 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/31749

Abstract: This ion milling device is provided with a vacuum chamber (105), an exhaust device (101) for evacuating the interior of the vacuum chamber, a sample stage (103) for supporting a sample (102) to be irradiated inside the vacuum chamber, a heater (107) for heating the interior of the vacuum chamber, a gas source (106) for introducing into the vacuum chamber a gas serving as a heating medium, and a controller (110) for controlling the gas source, the controller controlling the gas source so that the vacuum chamber internal pressure is in a predetermined state during heating by the heater. This enables the control in a short time of the temperature for suppressing condensation, or the like, occurring at atmospheric release after cooling and ion milling a sample.

Abstract translation: 该离子研磨装置设置有真空室（105），用于抽空真空室内部的排气装置（101），用于支撑在真空室内照射的样品（102）的样品台（103） 用于加热真空室内部的加热器（107），用于将作为加热介质的气体引入真空室的气源（106），以及用于控制气源的控制器（110），控制器 气体源，使得真空室内部压力在加热器加热期间处于预定状态。 这使得能够在短时间内控制在冷却和离子研磨样品之后在大气释放下发生的冷凝等的抑制。

公开(公告)号：US09263298B2

公开(公告)日：2016-02-16

申请号：US12919293

申请日：2009-02-26

Applicant: Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

Inventor： Naoki Matsumoto ,  Kazuto Takai ,  Reika Ko ,  Nobuyuki Okayama

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/32137 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

Abstract translation: 等离子体蚀刻装置11包括在其上保持半导体衬底W的安装台; 第一加热器18a，其加热保持在安装台14上的半导体基板W的中心区域; 第二加热器18b，其加热保持在安装台14上的半导体基板W的中心区域周围的边缘区域; 向保持在安装台14上的半导体基板W的中心区域供给等离子体处理用反应气体的反应气体供给部13; 以及控制单元20，其在控制第一加热器18a和第二加热器18b的同时对半导体基板W进行等离子体蚀刻处理，以将保持在安装台14上的处理对象基板W的中心区域和边缘区域加热到不同 温度。

公开(公告)号：US09248207B1

公开(公告)日：2016-02-02

申请号：US14495580

申请日：2014-09-24

Applicant: Hitachi High-Technologies Korea Co., Ltd.

Inventor： Heyoung Cheol Heyoung

IPC: H01J37/00 ,  A61L2/14 ,  H01J37/10 ,  H01J37/26

CPC classification number: A61L2/14 ,  H01J37/16 ,  H01J37/261 ,  H01J2237/022 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/2065

Abstract: The present invention relates to an electron microscope plasma cleaner for cleaning an electron microscope by using plasma, the cleaner including a vacuum chamber in which the sample is disposed; an electron gun for producing the electron beam and outputting the produced electron beam to the sample; an electron lens for magnifying the electron beam transmitting the sample and projecting the electron beam onto a fluorescent screen; a radio frequency controller for producing a first signal having radio frequency within a given range; and a plasma head for producing the plasma, receiving the first signal from the radio frequency controller, producing activated oxygen radicals and ions by using the plasma and the first signal, and supplying the activated oxygen radicals and ions to the interior of the vacuum chamber.

Abstract translation: 本发明涉及一种通过使用等离子体清洗电子显微镜的电子显微镜等离子体清洁器，该清洁器包括设置有样品的真空室; 用于产生电子束并将产生的电子束输出到样品的电子枪; 用于放大透射样品的电子束并将电子束投射到荧光屏上的电子透镜; 射频控制器，用于产生具有在给定范围内的射频的第一信号; 以及用于产生等离子体的等离子体头，从射频控制器接收第一信号，通过使用等离子体和第一信号产生活化的氧自由基和离子，并将活化的氧自由基和离子供应到真空室的内部。

公开(公告)号：US09062905B2

公开(公告)日：2015-06-23

申请号：US12653059

申请日：2009-12-07

Applicant: Jens Hoehne ,  Matthias Buehler

Inventor： Jens Hoehne ,  Matthias Buehler

IPC: F25D19/00 ,  F17C3/08 ,  H01J37/20 ,  G01Q30/10 ,  G01Q70/02 ,  G01Q70/04 ,  G03F7/20 ,  G01N21/01

CPC classification number: F25D19/00 ,  F17C3/085 ,  F25B2500/13 ,  G01N21/01 ,  G01Q30/10 ,  G01Q70/02 ,  G01Q70/04 ,  G03F7/70808 ,  H01J37/20 ,  H01J2237/2001

Abstract: A low temperature device has a low temperature container with an investigational opening. A material sample to that is to be examiner is mounted on a sample-holding device in the low temperature container. A sample that is fastened to the sample holding device can be cooled to the desired temperature using a cooling device, such as a pulse tube cooler, with a cold head that is inside the low temperature container. The sample holder is disposed in the low temperature container in such a way that the sample can be seen through the investigational opening. Because the investigational opening is flexible and not rigidly connected to the low temperature container, vibrations produced by the mechanical cooling device are prevented from being transferred to the investigational opening. Thus, a vibration-sensitive investigating and manipulating device can be coupled to the investigational opening without vibrations being transferred to the investigating and manipulating device.

Abstract translation: 低温装置具有低温容器，具有调查开口。 将要检查的材料样品安装在低温容器中的样品保持装置上。 固定在样品保持装置上的样品可以使用诸如脉冲管冷却器的冷却装置冷却到期望的温度，其中冷头位于低温容器内部。 样品保持器以这样的方式设置在低温容器中，使得可以通过调查开口来观察样品。 由于研究开口是柔性的并且不与低温容器刚性连接，所以防止机械冷却装置产生的振动被转移到调查开口。 因此，振动敏感的调查和操纵装置可以耦合到调查开口，而不会将振动传递到调查和操纵装置。

公开(公告)号：US20150144263A1

公开(公告)日：2015-05-28

申请号：US14613219

申请日：2015-02-03

Applicant: Martin RIKER ,  Wei W. WANG

Inventor： Martin RIKER ,  Wei W. WANG

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32871 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/2001 ,  H01J2237/335 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67207 ,  Y10T29/49826

Abstract: A substrate heating pedestal for a process chamber for processing substrates is described. The pedestal comprises an annular plate comprising a surface having an array of recesses. A plurality of ceramic balls are each positioned in a recess on the surface of the annular plate to define a substrate receiving surface. A heating element is embedded in the annular plate.

Abstract translation: 描述了用于处理基板的处理室的基板加热基座。 基座包括环形板，其包括具有凹槽阵列的表面。 多个陶瓷球各自定位在环形板的表面上的凹部中以限定基板接收表面。 加热元件嵌入环形板中。

公开(公告)号：US09010202B2

公开(公告)日：2015-04-21

申请号：US13560647

申请日：2012-07-27

Applicant: Halina Stabacinskiene ,  Jeffrey J. Gronsky ,  Christine M. Thomas ,  Pushkarraj V. Deshmukh ,  Alan C. Robins ,  Paul E. Fischione

Inventor： Halina Stabacinskiene ,  Jeffrey J. Gronsky ,  Christine M. Thomas ,  Pushkarraj V. Deshmukh ,  Alan C. Robins ,  Paul E. Fischione

IPC: B01L3/00 ,  G01N21/00 ,  G01N23/20 ,  H01J37/20 ,  H01J37/26 ,  B01L7/00

CPC classification number: G01N23/20033 ,  B01L7/50 ,  G01N2223/612 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/0216 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/204

Abstract: An improved cryogenic specimen holder for imaging and analysis facilitates imaging at very high tilt angles with a large field of view. A retractable specimen holder tip protects the specimen during transport. An optimized Dewar design is positioned at a fixed, tilted angle with respect to the axis of the holder, providing a means of continuously cooling the specimen irrespective of the high tilt angle and amount of liquid nitrogen present in the vessel. The Dewar neck design reduces entrapment of nitrogen gas bubbles and its shape prevents the spilling of liquid nitrogen at high tilt angles. The specimen holder has a retractable tip that completely encapsulates the specimen within a shielded environment internal to the specimen holder body. The cooling and specimen transfer mechanisms reduce thermal drift and the detrimental effects of vibrations generated by both the evaporation of liquid nitrogen present in the Dewar and other environmental effects.

Abstract translation: 用于成像和分析的改进的低温试样保持器便于在具有大视场的非常高的倾斜角下进行成像。 可伸缩的样品架头在运输过程中保护样品。 优化的杜瓦设计相对于保持器的轴线定位成固定的倾斜角度，提供连续冷却样品的手段，而不管存在于容器中的高的倾斜角和液氮量。 杜瓦瓶颈设计减少了氮气气泡的夹带，其形状可以防止液氮在高倾角下溢出。 样品架具有可收缩的尖端，其将样品完全包封在样品保持体内部的屏蔽环境内。 冷却和样品转移机制降低了热漂移和由杜瓦瓶中存在的液氮蒸发和其他环境影响产生的振动的不利影响。

公开(公告)号：US08963052B2

公开(公告)日：2015-02-24

申请号：US12436443

申请日：2009-05-06

Applicant: Neil Benjamin ,  Robert Steger

Inventor： Neil Benjamin ,  Robert Steger

IPC: H05B3/68 ,  H01L21/302 ,  C23C16/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。 加热器和平坦支架的组合温度变化率每秒至少1℃。

公开(公告)号：US08906161B2

公开(公告)日：2014-12-09

申请号：US12458096

申请日：2009-06-30

Applicant: Katsuhisa Kasanami ,  Toshimitsu Miyata ,  Mitsunori Ishisaka

Inventor： Katsuhisa Kasanami ,  Toshimitsu Miyata ,  Mitsunori Ishisaka

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/67103 ,  H01J37/32082 ,  H01J2237/2001 ,  Y10T279/23

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract translation: 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。

公开(公告)号：US08853648B2

公开(公告)日：2014-10-07

申请号：US13264933

申请日：2010-04-07

Applicant: Yasuhira Nagakubo ,  Toshiaki Tanigaki ,  Katsuji Ito

Inventor： Yasuhira Nagakubo ,  Toshiaki Tanigaki ,  Katsuji Ito

IPC: H01J37/20 ,  G01N1/28

CPC classification number: H01J37/20 ,  G01N1/286 ,  H01J2237/2001 ,  H01J2237/20214 ,  H01J2237/2065 ,  H01J2237/2802 ,  H01J2237/30466 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A sample holder for efficiently performing the processing or observation of a sample by means of charged particles while cooling. Particularly, disclosed is a sample holder whereby the processing or observation of a material which may be affected by the influence of heat damage can be performed in a state in which the material is cooled, and furthermore, the influence due to a sample processing method using charged particles can be reduced by cooling. The sample holder is provided with a sample stage capable of fixing a sample piece extracted from a sample by ion beam irradiation, and a rotation mechanism for rotating the sample stage in a desired direction, which can be attached to an ion beam device and a transmission electron microscope device, and which has a movable heat transfer material for thermally connecting the sample stage and a cooling source, and an isolation material for thermally isolating the sample stage and the heat transfer material from the outside. According to the sample holder, the processing or observation of a sample by means of charged particle beams can be performed while efficiently cooling.

Abstract translation: 用于在冷却期间通过带电粒子有效地进行样品的处理或观察的样品保持器。 特别地，公开了一种样品保持器，其可以在材料被冷却的状态下进行可能受热损伤影响的材料的加工或观察，此外，由于使用样品处理方法的影响 可以通过冷却来减少带电粒子。 样品架设有能够通过离子束照射固定从样品提取的样品片的样品台，以及用于沿所需方向旋转样品台的旋转机构，其可以附着到离子束装置和透射 电子显微镜装置，其具有用于热连接样品台和冷却源的可移动热传递材料，以及用于将样品台和传热材料从外部热隔离的隔离材料。 根据样品保持器，可以在有效地冷却的同时进行通过带电粒子束的样品的加工或观察。

公开(公告)号：US08757873B2

公开(公告)日：2014-06-24

申请号：US13304181

申请日：2011-11-23

Applicant: Stephanus Hubertus Leonardus van den Boom ,  Pleun Dona ,  Laurens Franz Taemsz Kwakman ,  Uwe Luecken ,  Hervé-William Rémigy ,  Hendrik Nicolaas Slingerland ,  Martin Verheijen ,  Gerbert Jeroen van de Water

Inventor： Stephanus Hubertus Leonardus van den Boom ,  Pleun Dona ,  Laurens Franz Taemsz Kwakman ,  Uwe Luecken ,  Hervé-William Rémigy ,  Hendrik Nicolaas Slingerland ,  Martin Verheijen ,  Gerbert Jeroen van de Water

IPC: G01K1/00 ,  G01K13/12 ,  G01K11/00 ,  G01K11/20 ,  G01K5/68 ,  H01J37/20 ,  H01J37/26

CPC classification number: G01K5/68 ,  G01K11/20 ,  H01J37/20 ,  H01J37/26 ,  H01J2237/2001 ,  H01J2237/24585

Abstract: A method of determining the temperature of a sample carrier in a charged particle-optical apparatus, characterized in that the method comprises the observation of the sample carrier with a beam of charged particles, the observation giving information about the temperature of the sample carrier. The invention is based on the insight that a charged particle optical apparatus, such as a TEM, STEM, SEM or FIB, can be used to observe temperature related changes of a sample carrier. The changes may be mechanical changes (e.g. of a bimetal), crystallographic changes (e.g. of a perovskite), and luminescent changes (in intensity or decay time). In a preferred embodiment the sample carrier shows two bimetals, showing metals with different thermal expansion coefficients, bending in opposite directions. The distance between the two bimetals is used as a thermometer.

Abstract translation: 一种确定带电粒子光学装置中的样品载体的温度的方法，其特征在于，所述方法包括用带电粒子束观察样品载体，所述观察给出关于样品载体的温度的信息。 本发明基于如下观点：带电粒子光学装置如TEM，STEM，SEM或FIB可用于观察样品载体的温度相关变化。 这些改变可以是机械变化（例如双金属），晶体学变化（例如钙钛矿）和发光变化（强度或衰变时间）。 在优选实施例中，样品载体显示两个双金属，显示具有不同热膨胀系数的金属，在相反方向上弯曲。 两个双金属片之间的距离用作温度计。