-
公开(公告)号:US20240112881A1
公开(公告)日:2024-04-04
申请号:US18196499
申请日:2023-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jonghyeok PARK , Kwangrak KIM , Jiwoong KIM , Hyenok PARK , Jeonghyeon WANG , Myungjun LEE , Yunje CHO , Junghee CHO , Yun HWANG
IPC: H01J37/28 , G01B11/22 , H01J37/20 , H01J37/304 , H01J37/305
CPC classification number: H01J37/28 , G01B11/22 , H01J37/20 , H01J37/304 , H01J37/305 , H01J37/1472 , H01J2237/24578
Abstract: A substrate analysis system includes a load-lock module configured to load or unload a substrate on which a pattern layer is formed; a milling module configured to form a milling surface from which at least a portion of the pattern layer is removed; a depth measuring module configured to measure a milling depth of an analysis region formed on the milling surface; an imaging module configured to capture a two-dimensional image of the analysis region; and a control module controlling the substrate to circulate through the milling module, the depth measuring module, and the imaging module, when the milling depth is shallower than a set target depth, wherein the milling module adjusts a path of the ion beam so that the ion beam moves horizontally in the milling region according to a scanning profile received based on an intensity map of the ion beam.
-
公开(公告)号:US20240096586A1
公开(公告)日:2024-03-21
申请号:US17829230
申请日:2022-05-31
Applicant: KLA CORPORATION
Inventor: Xinrong JIANG , Christopher SEARS , Youfei JIANG , Sameet K. SHRIYAN , Jeong Ho LEE , Michael STEIGERWALD , Ralph NYFFENEGGER
IPC: H01J37/153 , H01J37/06 , H01J37/12 , H01J37/244 , H01J37/28
CPC classification number: H01J37/153 , H01J37/06 , H01J37/12 , H01J37/244 , H01J37/28 , H01J2237/0451 , H01J2237/04735 , H01J2237/103 , H01J2237/151 , H01J2237/152 , H01J2237/1532 , H01J2237/1536 , H01J2237/2448
Abstract: A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the 5 primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.
-
33.
公开(公告)号:US20240095897A1
公开(公告)日:2024-03-21
申请号:US18524603
申请日:2023-11-30
Applicant: FEI Company
Inventor: Remco Schoenmakers , Maurice Peemen , Pavel Potocek
CPC classification number: G06T7/0002 , G06V20/693 , H01J37/28 , G06T2207/10061 , G06T2207/20084
Abstract: The invention relates to a method implemented by a data processing apparatus, comprising the steps of receiving an image; providing a set-point for a desired image quality parameter of said image; and processing said image using an image analysis technique for determining a current image quality parameter of said image. In the method, the current image quality parameter is compared with said desired set-point. Based on said comparison, a modified image is generated by using an image modification technique. The generating comprises a step of deteriorating said image in terms of said image quality parameter in case said current image quality parameter exceeds said set-point. The modified image is then output and may be further analysed.
-
公开(公告)号:US11935721B2
公开(公告)日:2024-03-19
申请号:US17374494
申请日:2021-07-13
Applicant: Carl Zeiss MultiSEM GmbH
Inventor: Dirk Zeidler , Nico Kaemmer , Christian Crueger
CPC classification number: H01J37/28 , H01J37/265 , H01J2237/2602 , H01J2237/2803
Abstract: A system includes a multi-beam particle microscope for imaging a 3D sample layer by layer, and a computer system with a multi-tier architecture is disclosed. The multi-tier architecture can allow for an optimized image processing by gradually reducing the amount of parallel processing speed when data exchange between different processing systems and/or of data originating from different detection channels takes place. A method images a 3D sample layer by layer. A computer program product includes a program code for carrying out the method.
-
公开(公告)号:US20240085357A1
公开(公告)日:2024-03-14
申请号:US17941394
申请日:2022-09-09
Applicant: JEOL Ltd.
Inventor: Hideyuki Takahashi , Takaomi Yokoyama
IPC: G01N23/2252 , G06T11/00 , H01J37/244 , H01J37/28
CPC classification number: G01N23/2252 , G06T11/00 , H01J37/244 , H01J37/28 , G01N2223/079 , G01N2223/418 , G01N2223/507 , H01J2237/2445
Abstract: An electron beam accelerated using a first acceleration voltage is applied to respective positions on a sample to obtain spectra A at the respective positions, and an electron beam accelerated using a second acceleration voltage different from the first acceleration voltage is applied to the respective positions on the sample to obtain spectra B at the respective positions. Then, a spectral ratio A/B of the spectra is calculated at each of the positions to generate a waveform representing the spectral ratio A/B. The value of a spectral ratio A/B in an energy region of interest is extracted from each of the waveforms. The extracted values are mapped onto points corresponding to the respective positions on the sample, whereby a spectral map is generated. The spectral map is displayed.
-
公开(公告)号:US11929231B2
公开(公告)日:2024-03-12
申请号:US17725151
申请日:2022-04-20
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor: Akito Tanokuchi , Seiichiro Kanno , Kei Shibayama
CPC classification number: H01J37/20 , H01J37/28 , H01J2237/2007 , H01J2237/202
Abstract: A charged particle beam device suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. The charged particle beam device includes the electrostatic chuck mechanism; a stage (200) which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body (203) which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member (402) which supports the insulating body on the stage; a ring-shaped electrode (400) which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member (405) which supports the ring-shaped electrode.
-
37.
公开(公告)号:US20240079201A1
公开(公告)日:2024-03-07
申请号:US17767595
申请日:2019-10-10
Applicant: Hitachi High-Tech Corporation , National Institute of Advanced Industrial Science and Technology
Inventor: Michio HATANO , Mitsuhiro NAKAMURA , Toshihiko OGURA
IPC: H01J37/20
Abstract: A sample holder reliably holds a liquid or gel sample, and the yield of observation with a charged particle beam device is improved. A sample holder 101 includes a first member 102 that has a lid member 111 and a first chip 105 provided with a first window 123 where a laminated film including a first insulating thin film 104 is formed, and a second member 103 that has a base material 127 having a first bottom seal surface 203 and a second bottom seal surface 200, an electrode 108 disposed on the base material, and a second chip 107 provided with a second window 124 where a second insulating thin film 106 is formed and held on the second bottom seal surface via a second seal material 119 such that the second window faces the electrode, in which a region inside a first seal material is maintained airtightly from a region outside the first seal material by the first member and the second member being combined and the first seal material being crushed between the first bottom seal surface and an upper seal surface of the lid member.
-
公开(公告)号:US20240071717A1
公开(公告)日:2024-02-29
申请号:US17823669
申请日:2022-08-31
Applicant: FEI Company
Inventor: Pavel Potocek , Maurice Peemen , Remco Schoenmakers
CPC classification number: H01J37/265 , H01J37/28 , H01J2237/31745
Abstract: Disclosed herein are scientific instrument support systems, as well as related methods, computing devices, and computer-readable media. For example, in some embodiments, an example method may comprise receiving, by a first device located at a premises and from a second device located external to the premises, and via a network, configuration data for a charged particle microscope located at the premises. The method may comprise updating, by the first device and based on the configuration data, one or more configuration settings associated with the charged particle microscope. The method may comprise causing, based on the updated one or more configuration settings, one or more operations associated with the charged particle microscope to be performed.
-
公开(公告)号:US20240071713A1
公开(公告)日:2024-02-29
申请号:US18270707
申请日:2021-12-09
Applicant: ASML Netherlands B.V.
Inventor: Niels Johannes Maria BOSCH , Xu WANG , Peter Paul HEMPENIUS , Yongqiang WANG , Hans BUTLER , Youjin WANG , Jasper Hendrik GRASMAN , Jianzi SUI , Tianming CHEN , Aimin WU
IPC: H01J37/20
CPC classification number: H01J37/20 , H01J37/28 , H01J2237/20235
Abstract: There is provided a charged particle apparatus comprising: a particle beam generator, optics, a first and a second positioning device, both configured for positioning the substrate relative to the particle beam generator along its optical axis, and a controller configured for switching between a first operational mode and a second operational mode. The apparatus is configured, when operating in the first operational mode, for irradiating the substrate by the particle beam at a first landing energy of the particle beam and, when operating in the second operational mode, for irradiating the substrate at a second, different landing energy. When operating in the first operational mode, the second positioning device is configured to position the substrate relative to the particle beam generator at a first focus position of the particle beam and in the second operational mode, to position the substrate at a second, different focus position.
-
公开(公告)号:US20240071710A1
公开(公告)日:2024-02-29
申请号:US18350643
申请日:2023-07-11
Applicant: FemtoMetrix, Inc.
Inventor: Timothy M. Wong
IPC: H01J37/02 , H01J37/22 , H01J37/244 , H01J37/28
CPC classification number: H01J37/026 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0048
Abstract: A non-invasive semiconductor technique for measuring dielectric/semiconductor interface trap density can be performed by charging the dielectric by creating charges on the top surface of the dielectric layer over the wafer using Scanning Electron Microscope (SEM) charging. This charging can induce an accumulated, a depleted and/or an inverted semiconductor surface. The states of the semiconductor surface can subsequently be measured, identified, and/or quantified using Electric Field Induced Second Harmonic generation (EFISH). From the measured/acquired EFISH versus SEM charge curve, the interface state density (Dit) can be extracted. A large working distance provides the ability to create charge and measure the Second Harmonic Generation (SHG) at the same semiconductor surface spot without the needing to move the wafer.
-
-
-
-
-
-
-
-
-