公开(公告)号：US11854772B2

公开(公告)日：2023-12-26

申请号：US17311149

申请日：2019-11-26

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Masaki Hirayama

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32568 ,  H01J2237/20235

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

公开(公告)号：US11854767B2

公开(公告)日：2023-12-26

申请号：US17220094

申请日：2021-04-01

Applicant: Tokyo Electron Limited

Inventor： Masanori Sato

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32082 ,  H01J37/32449 ,  H01L21/6833 ,  H01J2237/24578

Abstract: A measuring method includes placing a substrate on an electrostatic chuck disposed inside a chamber, attracting the substrate onto the electrostatic chuck, generating plasma inside the chamber, detecting an amount of light reflected at the substrate by light emission of the plasma, and calculating a natural frequency of the substrate based on the amount of light.

公开(公告)号：US11842897B2

公开(公告)日：2023-12-12

申请号：US16593757

申请日：2019-10-04

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/033 ,  H01L21/683 ,  H01L21/311 ,  H01L21/027 ,  H01L21/67 ,  H01J37/32 ,  C23C16/509 ,  C23C16/27

CPC classification number: H01L21/0337 ,  C23C16/272 ,  C23C16/509 ,  H01J37/32724 ,  H01L21/0332 ,  H01L21/6833 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32834 ,  H01J2237/1825 ,  H01J2237/24585 ,  H01J2237/3321 ,  H01L21/0273 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/67248

Abstract: Embodiments of the present disclosure generally relate to deposition of high transparency, high-density carbon films for patterning applications. In one embodiment, a method of forming a carbon film on a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a process chamber having a substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a temperature of about −10° C. to about 20° C. and a chamber pressure of about 0.5 mTorr to about 10 Torr, and generating a plasma by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film containing about 60% or greater hybridized sp3 atoms on the substrate, wherein the first RF bias is provided at a power of about 1800 Watts to about 2200 Watts and at a frequency of about 40 MHz to about 162 MHz.

公开(公告)号：US20230386805A1

公开(公告)日：2023-11-30

申请号：US18231165

申请日：2023-08-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming Che CHEN ,  Wei-Chen LIAO

IPC: H01J37/32 ,  C23C16/44 ,  B08B7/00 ,  C23C16/455

CPC classification number: H01J37/32862 ,  H01J37/32082 ,  C23C16/4405 ,  B08B7/0071 ,  C23C16/45536

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

公开(公告)号：US20230352309A1

公开(公告)日：2023-11-02

申请号：US17732662

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Company

Inventor： Ping-Hsun Lin ,  Hung-Yi Tsai ,  Hao-Ping Cheng ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: H01L21/3065 ,  H01J37/32 ,  H05H1/24 ,  H01J37/22 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32477 ,  H05H1/24 ,  H01J37/22 ,  H01L21/308 ,  H01J2237/334 ,  H01J37/32082 ,  H05H2245/40

Abstract: Methods for plasma stability in a plasma treatment tool are disclosed. A laser is positioned within a plasma treatment chamber within a skin depth of the electromagnetic field generated therein. The laser can be synchronized with the electrical triggering signals that generate the electromagnetic field. This scheme provides a stable and efficient method of plasma ignition.

公开(公告)号：US20230343551A1

公开(公告)日：2023-10-26

申请号：US18137779

申请日：2023-04-21

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada

IPC: C23C16/36 ,  C23C16/40 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/042 ,  C23C16/345 ,  C23C16/36 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/505 ,  H01J2237/0203 ,  H01J2237/332

Abstract: Provided is a substrate processing method in which a liner layer is formed on the photo resist underlayer, followed by forming SiO2 patterning layer thereon. According to the embodiment, the liner layer is formed by providing a silicon-containing layer, followed by inert gas activated by providing a high frequency RF power and a low frequency RF power together simultaneously. Thus, a loss of photo resist underlayer may be minimized within the range that does not affect the device performance and the wet etch properties and the width between fine patterns may be kept constant while the thickness of the liner layer is thin.

公开(公告)号：US20230335376A1

公开(公告)日：2023-10-19

申请号：US17723722

申请日：2022-04-19

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Fernando SILVEIRA ,  Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Imad YOUSIF

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/06375 ,  H01J2237/2007

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

公开(公告)号：US20230326723A1

公开(公告)日：2023-10-12

申请号：US18130429

申请日：2023-04-04

Applicant: TES CO., LTD

Inventor： Jae-Woo KIM ,  Sang-Woo CHO

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32522 ,  H01J2237/024 ,  H01J2237/334 ,  H01J2237/335

Abstract: The present invention relates to a hybrid chamber, and more specifically, to a hybrid chamber capable of performing both a gas phase etching (GPE) process for removing oxide from a substrate and a radical dry cleaning (RDC) process for removing nitride from the substrate in one chamber.

公开(公告)号：US20230326717A1

公开(公告)日：2023-10-12

申请号：US18201358

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299 ,  H01L21/31116 ,  H01L21/6831

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20230313364A1

公开(公告)日：2023-10-05

申请号：US17737361

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Kevin KASHEFI ,  Xiaodong Wang ,  Suhas Bangalore Umesh ,  Zheng Ju ,  Jiajie Cen

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/32

CPC classification number: C23C14/3407 ,  C23C14/3485 ,  H01J37/3405 ,  C23C14/345 ,  C23C14/35 ,  C23C14/50 ,  H01J37/3458 ,  H01J37/32082

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.