Abstract:
A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.
Abstract:
A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.
Abstract:
A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.
Abstract:
Implementations described herein provide a magnetic ring which enables both lateral and azimuthal tuning of the plasma in a processing chamber. In one embodiment, the magnetic ring has a body. The body has a top surface and a bottom surface, and a plurality of magnets are disposed on the bottom surface of the body.
Abstract:
An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.
Abstract:
Described herein is a chamber component having a body comprising one or more aluminum alloy compositions. A surface of the chamber component has an aluminum alloy composition comprising aluminum (Al), wherein the Al is included in an amount of about 85 wt % to about 98 wt %, based on total weight of the alloy composition, and magnesium (Mg), wherein the Mg is included in an amount of about 1 wt % to about 5 wt %, based on total weight of the alloy composition. The aluminum alloy composition further includes one or more additional chemical elements that form an equiaxed grain structure of an aluminum matrix of the alloy composition.
Abstract:
Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.
Abstract:
Exemplary methods of manufacturing a semiconductor cover wafer may include sintering aluminum nitride particles into a substrate characterized by a thickness and characterized by a disc shape. The methods may include grinding a surface of the substrate to reduce the thickness to less than or about 2 mm. The methods may include polishing the surface of the substrate to reduce a roughness. The methods may include annealing the substrate at a temperature of greater than or about 800° C. for a time period of greater than or about 60 minutes.
Abstract:
Example structures, methods, and systems for additive manufacturing of components of source and gas delivery nozzle assembly are disclosed. One example structure includes a unitary gas distribution nozzle assembly that includes an upper electrode portion and a lower electrode portion joined by multiple joining structures, and one or more gas zone divider walls positioned between the upper electrode portion and the lower electrode portion. The unitary gas distribution nozzle assembly is of a single material. Each of the multiple joining structures is positioned between the upper electrode portion and the lower electrode portion. Each of the multiple joining structures is configured to transfer radio-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. The one or more gas zone divider walls are configured to separate a region between the upper electrode portion and the lower electrode portion into two or more plenum chambers.
Abstract:
Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.