Plasma chamber with tandem processing regions

    公开(公告)号:US10381200B2

    公开(公告)日:2019-08-13

    申请号:US15453868

    申请日:2017-03-08

    Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

    In-situ semiconductor processing chamber temperature apparatus

    公开(公告)号:US12183605B2

    公开(公告)日:2024-12-31

    申请号:US17477750

    申请日:2021-09-17

    Abstract: Methods and systems for in-situ temperature control are provided. The method includes delivering a temperature-sensing disc into a processing region of a processing chamber without breaking vacuum. The temperature-sensing disc includes one or more cameras configured to perform IR-based imaging. The method further includes measuring a temperature of at least one region of at least one chamber surface in the processing region of the processing chamber by imaging the at least one surface using the temperature-sensing disc. The method further includes comparing the measured temperature to a desired temperature to determine a temperature difference. The method further includes adjusting a temperature of the at least one chamber surface to compensate for the temperature difference.

    CCP GAS DELIVERY NOZZLE
    49.
    发明公开

    公开(公告)号:US20240339301A1

    公开(公告)日:2024-10-10

    申请号:US18206847

    申请日:2023-06-07

    Abstract: Example structures, methods, and systems for additive manufacturing of components of source and gas delivery nozzle assembly are disclosed. One example structure includes a unitary gas distribution nozzle assembly that includes an upper electrode portion and a lower electrode portion joined by multiple joining structures, and one or more gas zone divider walls positioned between the upper electrode portion and the lower electrode portion. The unitary gas distribution nozzle assembly is of a single material. Each of the multiple joining structures is positioned between the upper electrode portion and the lower electrode portion. Each of the multiple joining structures is configured to transfer radio-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. The one or more gas zone divider walls are configured to separate a region between the upper electrode portion and the lower electrode portion into two or more plenum chambers.

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