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    LOW-STRESS DOPED ULTRANANOCRYSTALLINE DIAMOND
    45.
    发明申请
    LOW-STRESS DOPED ULTRANANOCRYSTALLINE DIAMOND 有权
    低应力超声波超声波钻石

    公开(公告)号：US20160101974A1

    公开(公告)日：2016-04-14

    申请号：US14283098

    申请日：2014-05-20

    Applicant: UChicago Argonne, LLC

    Inventor： Anirudha V. Sumant ,  Federico Buja ,  Willem Merlijn van Spengen

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0024 ,  B81B3/0075 ,  B81C1/0038 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/0171 ,  B81C2201/0176 ,  C23C14/16

    Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

    Abstract translation: 纳米/微机电系统（MEMS）中的纳米晶金刚石涂层显示出应力。 掺杂的纳米金刚石涂层表现出增加的应力。 碳化物形成金属涂层减少了面内应力。 此外，没有任何金属涂层，简单地生长厚度在3-4微米范围内的UNCD或NCD也显着降低了面内应力。 这种涂层可用于MEMS应用。

    MICRO-SENSOR BODY AND METHOD FOR MANUFACTURING THE SAME, AS WELL AS MICRO-SENSOR
    46.
    发明申请
    MICRO-SENSOR BODY AND METHOD FOR MANUFACTURING THE SAME, AS WELL AS MICRO-SENSOR 有权
    微传感器体及其制造方法，作为微传感器

    公开(公告)号：US20160052775A1

    公开(公告)日：2016-02-25

    申请号：US14778721

    申请日：2014-04-30

    Applicant: XIAMEN HOPERGY PHOTOVOLTAIC TECHNOLOGY CO., LTD

    Inventor： Chunyan Ji ,  Tian Yang

    IPC: B81B3/00 ,  C23C14/14 ,  G01F1/56 ,  B81C1/00 ,  G01J1/42 ,  C23C14/34 ,  C23C14/06

    CPC classification number: B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0127 ,  B81C1/00142 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C14/0605 ,  C23C14/0617 ,  C23C14/14 ,  C23C14/34 ,  F24S25/30 ,  F24S25/636 ,  F24S2025/016 ,  F24S2025/801 ,  F24S2025/807 ,  G01F1/56 ,  G01J1/42 ,  H02S20/00 ,  Y02E10/47 ,  Y02E10/50

    Abstract: The present disclosure relates to the field of sensor manufacturing technology, particularly discloses a method for manufacturing a micro-sensor body, comprising the steps of S1: applying a wet colloidal material on a substrate to form a colloidal layer, and covering a layer of one-dimensional nanowire film on the surface of the colloidal layer to form a sensor embryo; S2: drying the colloidal layer of the sensor embryo to an extent that the colloidal layer cracks into a plurality of colloidal islands, a portion of the one-dimensional nanowire film contracting into a contraction diaphragm adhered to the surface of the colloidal islands while the other portion of the one-dimensional nanowire film being stretched into a connection structure connected between the adjacent contraction diaphragms. By the method for manufacturing a micro-sensor body of the present disclosure, the contraction diaphragms and connection structures formed by stretching the one-dimensional nanowire film are connected stably, which enhances the stability of the sensor devices; and the cracking manner renders it easy to obtain a large-scale of sensor bodies with connection structure arrays in stable suspension.

    Abstract translation: 本发明涉及传感器制造技术领域，特别是公开了一种微传感器体的制造方法，其特征在于，包括以下步骤：S1将湿胶体材料涂布于基板上，形成胶体层，并覆盖一层 胶体层表面的三维纳米线膜形成传感器胚胎; S2：将传感器胚胎的胶体层干燥到胶体层裂解成多个胶体岛的程度，一部分纳米线膜的一部分收缩到收缩膜中，粘附到胶体岛的表面，而另一个 一维纳米线膜的一部分被拉伸成连接在相邻收缩膜片之间的连接结构。 通过本公开的微传感器体的制造方法，通过拉伸一维纳米线膜而形成的收缩膜片和连接结构稳定连接，提高了传感器装置的稳定性; 并且裂解方式使得容易获得具有稳定悬浮的连接结构阵列的大规模传感器体。

    Microelectromechanical systems having trench isolated contacts, and methods for fabricating same
    50.
    发明授权
    Microelectromechanical systems having trench isolated contacts, and methods for fabricating same 有权
    具有沟槽隔离触点的微机电系统及其制造方法

    公开(公告)号：US07352040B2

    公开(公告)日：2008-04-01

    申请号：US11078253

    申请日：2005-03-11

    Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

    IPC: H01L29/84

    CPC classification number: B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

    Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

    Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

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