公开(公告)号：US20160071689A1

公开(公告)日：2016-03-10

申请号：US14844778

申请日：2015-09-03

Applicant: FEI Company

Inventor： Erwin Fernand de Jong ,  Sorin Lazar ,  Peter Christiaan Tiemeijer ,  Rudolf Geurink

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/20 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/226 ,  H01J37/05 ,  H01J37/09 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244 ,  H01J37/26 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/15 ,  H01J2237/2007 ,  H01J2237/24485 ,  H01J2237/24585 ,  H01J2237/2802

Abstract: A method of performing spectroscopy in a Transmission Charged-Particle Microscope comprising: a specimen holder; a source, for producing a beam of charged particles; an illuminator, for directing said beam so as to irradiate the specimen; an imaging system, for directing a flux of charged particles transmitted through the specimen onto a spectroscopic apparatus comprising a dispersing device for dispersing said flux into an energy-resolved array of spectral sub-beams, the method comprising: using an adjustable aperture device to admit a first portion of said array to a detector, while blocking a second portion of said array; providing; using a radiation sensor in said flux upstream of said aperture device to perform localized radiation sensing in a selected region of said second portion of the array, simultaneous with detection of said first portion by said detector; using a sensing result from said sensor to adjust a detection result from said detector.

Abstract translation: 一种在透射带电粒子显微镜中进行光谱的方法，包括：样品架; 用于产生带电粒子束的源; 照明器，用于引导所述光束以照射所述样本; 一种成像系统，用于将通过样本传输的带电粒子的通量引导到分光装置上，该分光装置包括用于将所述通量分散到光谱子束的能量分辨阵列中的分散装置，所述方法包括：使用可调节孔径装置来允许 所述阵列的第一部分到达检测器，同时阻挡所述阵列的第二部分; 提供; 在所述孔设备上游的所述通量中使用辐射传感器，以在阵列的所述第二部分的选定区域中进行局部辐射感测，同时由所述检测器检测所述第一部分; 使用来自所述传感器的感测结果来调整来自所述检测器的检测结果。

公开(公告)号：US20140261173A1

公开(公告)日：2014-09-18

申请号：US14217064

申请日：2014-03-17

Applicant: GLENN LANE FAMILY LIMITED LIABILITY LIMITED PARTNERSHIP

Inventor： GLENN E. LANE

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/3007 ,  C23C14/48 ,  C23C14/54 ,  H01J37/08 ,  H01J37/09 ,  H01J37/3171 ,  H01J49/062 ,  H01J49/26 ,  H01J2237/0213 ,  H01J2237/04 ,  H01J2237/0455 ,  H01J2237/152 ,  H01J2237/31701 ,  H01L21/265

Abstract: Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ions species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (“CPC”) superconductor, or boson energy transmission system.

Abstract translation: 本发明的实施例涉及可用于离子注入系统中的质量分辨孔径，该离子注入系统在离子束中基于质量比（和/或质量与电荷比）不理想地选择性地排除离子种类 部件。 本发明的实施例涉及一种质量分辨孔径，该质量分辨孔径被分段，可调节和/或呈现出将撞击孔的迎面而来的离子物质的曲面。 本发明的实施例还涉及通过封闭等离子体通道（“CPC”）超导体或玻色子能量传输系统对带电粒子的流过滤。

公开(公告)号：US08766185B2

公开(公告)日：2014-07-01

申请号：US12688095

申请日：2010-01-15

Applicant: Tomokazu Shimakura ,  Masaki Hasegawa

Inventor： Tomokazu Shimakura ,  Masaki Hasegawa

IPC: G01N23/225 ,  H01J37/02 ,  H01J37/20 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/04 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/153 ,  H01J2237/1536 ,  H01J2237/2008

Abstract: The charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.

Abstract translation: 带电粒子束装置具有无限旋转的样品台和用于校正样品周边部分的电场失真的电场控制电极。 通过在旋转台的旋转中心处与保持器接收器接触的延迟电极将电压施加到无限可旋转的样品台上的样品。 通过向电场控制电极施加电压来改变电场控制电极上的等电位面，并且在此之后校正样品边缘处的等电位面，使得可以将样品观察到其边缘。

公开(公告)号：US08669517B2

公开(公告)日：2014-03-11

申请号：US13474186

申请日：2012-05-17

Applicant: William O. Hamby ,  Joseph Valinski

Inventor： William O. Hamby ,  Joseph Valinski

IPC: H01J37/30 ,  H01J49/00

CPC classification number: H01J37/3171 ,  H01J37/023 ,  H01J37/05 ,  H01J49/30 ,  H01J2237/0455 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/24514

Abstract: A method and apparatus is provided for reducing unwanted isotopes of an ion implantation species from an ion beamline. The apparatus herein disclosed is a mass analysis variable exit aperture that selectively reduces the size of an exit aperture as seen by an ion beam. In one embodiment, the variable mass analysis exit aperture is located within a mass analyzer at a position upstream of a resolving aperture and effectively limits the size of an exit aperture so as to allow passage of desired implantation isotope(s) while blocking the passage of unwanted implantation isotopes. In one particular embodiment, the mass analysis variable exit aperture has a mechanical drive mechanism that enables a blocking structure to be moved into the path of an ion beam in a graduated fashion as guided by a control unit that operates based upon one or more characteristics of the ion beam.

Abstract translation: 提供了一种用于从离子束线减少离子注入物质的不想要的同位素的方法和装置。 本文公开的装置是质量分析可变出口孔，其选择性地减小出口孔的尺寸，如离子束所见。 在一个实施例中，可变质量分析出口孔位于质量分析器内的分辨孔径上游的位置处，并且有效地限制出口孔的尺寸，以允许期望的注入同位素通过，同时阻止 不想要的植入同位素。 在一个具体实施例中，质量分析可变出口孔具有机械驱动机构，其使阻挡结构能够以分级方式移动到离子束的路径中，该控制单元基于一个或多个 离子束。

公开(公告)号：US08609305B2

公开(公告)日：2013-12-17

申请号：US13443440

申请日：2012-04-10

Applicant: Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

Inventor： Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

IPC: G03F1/78 ,  G03F1/80

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F1/80 ,  H01J37/3026 ,  H01J2237/0455 ,  H01J2237/31764 ,  H01J2237/31776

Abstract: In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Abstract translation: 在形成掩模版和电子束曝光系统的方法中，将第一电子束照射到具有遮光层和感光层的坯料掩模版的第一区域上，以形成第一射出图案。 具有大于第一电子束的横截面面积的第二电子束被照射到坯料掩模版的第二区域上。 感光层被显影以分别在第一和第二区域形成第一和第二掩模图案。 使用第一和第二掩模图案作为蚀刻掩模蚀刻掉遮光层，从而形成包括第一区域中的第一图案和第二区域中的第二图案的母体图案。 因此，第二电子束的放大减少了空白掩模版的扫描时间，从而缩短了处理时间。

公开(公告)号：US08563951B2

公开(公告)日：2013-10-22

申请号：US13419761

申请日：2012-03-14

Applicant: Jin Choi ,  Jin-Ha Jeong ,  Vladimir Urazaev ,  Hea-Yun Lee

Inventor： Jin Choi ,  Jin-Ha Jeong ,  Vladimir Urazaev ,  Hea-Yun Lee

IPC: G21K5/04

CPC classification number: G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/30472 ,  H01J2237/31776

Abstract: Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Abstract translation: 曝光系统包括光束发生器，其被配置成沿着第一和第二光束整形器照射源光束的待曝光物体的方向上的光源射束。 设置在光束发生器附近的第一光束整形器具有其中定位成穿过从光束发生器接收的源光束的第一孔。 第二光束整形器靠近第一光束整形器设置。 第二光束整形器包括其中具有第二孔的板，其被定位成接收穿过第一光束整形器的第一孔的源光束。 第二光束整形器还包括机械耦合到第一致动器的第一致动器和第一移位屏幕。

公开(公告)号：US08298432B2

公开(公告)日：2012-10-30

申请号：US11864489

申请日：2007-09-28

Applicant: Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: G01L21/30

CPC classification number: C23C14/545 ,  C23C14/221 ,  C23C16/513 ,  C23C16/52 ,  H01J37/09 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/0453 ,  H01J2237/0455 ,  H01J2237/0812

Abstract: A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括根据一组光束特性建立气体簇离子束（GCIB），并测量衬底的测量数据。 此后，该方法包括在衬底上的一个或多个位置处确定测量数据的至少一个空间梯度，并根据确定的至少一个空间梯度调整GCIB的一组光束属性中的至少一个光束特性。 使用测量数据和调整的束特性组合，计算衬底的校正数据。 在计算之后，根据校正数据将调整后的GCIB应用于衬底。

公开(公告)号：US08293126B2

公开(公告)日：2012-10-23

申请号：US11864461

申请日：2007-09-28

Applicant: Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCrimmon ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: G01L21/30

CPC classification number: H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/0451 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/0812 ,  H01J2237/20228 ,  H01J2237/2485 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括获取衬底的度量数据，以及计算用于调整衬底上度量数据的第一区域的校正数据。 此后，建立了用于处理高梯度区域的第一气体簇离子束（GCIB），并且根据校正数据将第一GCIB施加到衬底。 该方法还包括可选地在应用第一GCIB之后获取第二计量数据，以及计算第二校正数据，用于调整测量数据的第二区域，或第二测量数据或二者在衬底上。 此后，建立了用于处理第二区域的第二气体簇离子束（GCIB），并且根据第二校正数据将第二GCIB施加到衬底。

公开(公告)号：US20110155929A1

公开(公告)日：2011-06-30

申请号：US12647152

申请日：2009-12-24

Applicant: Neil J. Bassom ,  Leo V. Klos ,  Joseph C. Olson

Inventor： Neil J. Bassom ,  Leo V. Klos ,  Joseph C. Olson

IPC: G21K5/04 ,  G21K1/00

CPC classification number: G21K5/04 ,  G21K1/043 ,  G21K1/046 ,  H01J37/09 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542

Abstract: An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the ribbon beam. The ion beam blocking array includes a drive motor, an axle connected to the drive motor and a plurality of profile wheels disposed along the axle where each of the profile wheels is configured to rotate when the axle rotates. Each of the profile wheels is disposed across a width of the ribbon beam and has a position corresponding to a location along the width of the beam.

Abstract translation: 一种离子束阻挡阵列，被配置成提供用于通过阻挡穿过带束束的一个或多个位置处的束电流来调节离子带束束的束电流分布的机械装置。 离子束阻挡阵列包括驱动电动机，连接到驱动电动机的轴和沿车轴设置的多个轮廓轮，其中每个轮廓轮构造成在轴转动时旋转。 每个轮廓轮横跨带状束的宽度设置，并且具有对应于沿梁的宽度的位置的位置。

公开(公告)号：US20110114838A1

公开(公告)日：2011-05-19

申请号：US12634444

申请日：2009-12-09

Applicant: Liqun HAN ,  Marian MANKOS ,  Xinrong JIANG ,  Rex RUNYON ,  John GREENE

Inventor： Liqun HAN ,  Marian MANKOS ,  Xinrong JIANG ,  Rex RUNYON ,  John GREENE

IPC: G01N23/00

CPC classification number: H01J37/09 ,  G01B15/00 ,  H01J37/28 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/2817 ,  H01L22/12

Abstract: One embodiment relates to an electron-beam apparatus for defect inspection and/or review of substrates or for measuring critical dimensions of features on substrates. The apparatus includes an electron gun and an electron column. The electron gun includes an electron source configured to generate electrons for an electron beam and an adjustable beam-limiting aperture which is configured to select and use one aperture size from a range of aperture sizes. Another embodiment relates to providing an electron beam in an apparatus. Advantageously, the disclosed apparatus and methods reduce spot blur while maintaining a high beam current so as to obtain both high sensitivity and high throughput.

Abstract translation: 一个实施例涉及一种用于缺陷检查和/或检查基板或用于测量基板上的特征的关键尺寸的电子束装置。 该装置包括电子枪和电子柱。 电子枪包括被配置为产生用于电子束的电子的电子源和可调节的光束限制孔，其被配置为从一定范围的孔径尺寸中选择和使用一个孔径尺寸。 另一实施例涉及在装置中提供电子束。 有利地，所公开的装置和方法在保持高光束电流的同时减少斑点模糊，以便获得高灵敏度和高吞吐量。