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    METHODS FOR HIGH PRECISION ETCHING OF SUBSTRATES
    41.
    发明申请
    METHODS FOR HIGH PRECISION ETCHING OF SUBSTRATES 有权
    高精度蚀刻基板的方法

    公开(公告)号：US20160013063A1

    公开(公告)日：2016-01-14

    申请号：US14790891

    申请日：2015-07-02

    Applicant: Tokyo Electron Limited

    Inventor： Alok Ranjan ,  Mingmei Wang ,  Peter L. G. Ventzek

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/32136 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32192 ,  H01J37/32816 ,  H01L21/30655 ,  H01L21/31116

    Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.

    Abstract translation: 本公开涉及等离子体处理系统和用于微电子基板的高精度蚀刻的方法。 该系统可以包括微波和射频（RF）电源的组合，其可以产生等离子体条件以去除单层。 该系统可以产生第一等离子体以在微电子衬底的表面上形成薄的吸附层。 当系统转变到第二等离子体时，可以去除吸附层。 第一和第二等离子体之间的差异可以包括靠近衬底的离子能。 例如，第一等离子体可以具有小于20eV的离子能量，并且第二等离子体可具有大于20eV的离子能。

    METHOD AND SYSTEM FOR GRAPHENE FORMATION
    42.
    发明申请
    METHOD AND SYSTEM FOR GRAPHENE FORMATION 审中-公开
    用于石墨形成的方法和系统

    公开(公告)号：US20150368111A1

    公开(公告)日：2015-12-24

    申请号：US14838202

    申请日：2015-08-27

    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： David A. Boyd

    IPC: C01B31/04 ,  H01J37/32 ,  C23C16/52

    CPC classification number: C23C16/26 ,  B01J19/088 ,  B01J19/22 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/0245 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32816 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/1606 ,  H01L29/32

    Abstract: A system for graphene production includes a plurality of gas sources, a plurality of mass flow controllers, and a processing chamber. The system also includes a plasma source operable, a vacuum pump, a processor, and a non-transitory computer-readable storage medium including a plurality of computer-readable instructions. The plurality of instructions include instructions that cause the data processor to subject a substrate to a reduced pressure environment, to provide a carrier gas and a carbon source, and to expose at least a portion of the substrate to the carrier gas and the carbon source. The plurality of instructions also include instructions that cause the data processor to perform a surface treatment process on the at least a portion of the substrate and to convert a portion of the carbon source to graphene disposed on the at least a portion of the substrate.

    Abstract translation: 石墨烯生产系统包括多个气源，多个质量流量控制器和处理室。 该系统还包括可操作的等离子体源，真空泵，处理器和包括多个计算机可读指令的非暂时计算机可读存储介质。 多个指令包括使数据处理器使基板经历减压环境，提供载气和碳源，以及将至少一部分基板暴露于载气和碳源的指令。 多个指令还包括使得数据处理器对基板的至少一部分执行表面处理处理并将碳源的一部分转换成设置在基板的至少一部分上的石墨烯的指令。

    UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF
    43.
    发明申请
    UNITIZED CONFINEMENT RING ARRANGEMENTS AND METHODS THEREOF 审中-公开
    UNITIZED CONFINEMENT RING ARRANGEM AND METHODS WITHFORE

    公开(公告)号：US20150325414A1

    公开(公告)日：2015-11-12

    申请号：US14802972

    申请日：2015-07-17

    Applicant: Lam Research Corporation

    Inventor： Rajinder Dhindsa ,  Rajaramanan Kalyanaraman ,  Sathyanarayanan Mani ,  Gautam Bhattacharyya

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J2237/334

    Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

    Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 所述装置还包括至少一个柱塞，所述至少一个柱塞构造成用于沿垂直方向移动所述单位化限制环装置，以调节第一气体传导路径和第二气体导电路径中的至少一个，以执行所述压力控制，其中所述第一气体导电路径 形成在上部电极和单元化的限制环装置之间，并且第二气体导电路径形成在下部电极和单个组合环形装置之间。

    CLEANING APPARATUS AND PROCESS FOR CLEANING ELECTRONIC COMPONENTS
    45.
    发明申请
    CLEANING APPARATUS AND PROCESS FOR CLEANING ELECTRONIC COMPONENTS 审中-公开
    清洁装置和清洁电子元件的过程

    公开(公告)号：US20150258585A1

    公开(公告)日：2015-09-17

    申请号：US14214869

    申请日：2014-03-15

    Applicant: DONG GUAN COWELL OPTIC ELECTRONICS LIMITED

    Inventor： Gun Woo PARK

    IPC: B08B7/00 ,  H01J37/32

    CPC classification number: H01J37/32899 ,  H01J37/32816 ,  H01J37/32825 ,  H01J37/32862 ,  H01J37/32871 ,  H05H2240/10

    Abstract: Cleaning apparatuses for cleaning electronic components such as camera modules and electronics substrates are provided. The cleaning apparatuses have a plurality of processing zones and one or more conveyors for conveying an electronic component to each processing zone sequentially such that the electronic component is processed in-line by the processing zones. In one aspect, plasma is applied to the electronic component at atmospheric pressure at one of the processing zones. In another aspect, there is a plurality of separately controlled conveyors, and the electronic component is processed at each processing zone over a respective processing time, with at least one of the processing times being different to the other processing times.

    Abstract translation: 提供了用于清洁诸如照相机模块和电子基板的电子部件的清洁装置。 清洁装置具有多个处理区域和一个或多个输送机，用于将电子部件顺序地传送到每个处理区域，使得电子部件通过处理区域在线处理。 在一个方面，等离子体在大气压力下在一个处理区域施加到电子部件。 在另一方面，存在多个单独控制的输送机，并且在相应的处理时间内在每个处理区域处理电子部件，其中至少一个处理时间不同于其他处理时间。

    Plasma processing apparatus and plasma processing method
    46.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08951385B2

    公开(公告)日：2015-02-10

    申请号：US13864317

    申请日：2013-04-17

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Kenji Maeda ,  Ken Yoshioka ,  Hiromichi Kawasaki ,  Takahiro Shimomura

    IPC: H01L21/306 ,  H01L21/67 ,  H01L21/02 ,  C23C16/507 ,  H01J37/32

    CPC classification number: H01J37/3211 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32816 ,  H01L21/02 ,  H01L21/02041 ,  H01L21/02104 ,  H01L21/30 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67069

    Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

    Abstract translation: 提供了一种等离子体处理装置，其具有可抽真空的真空容器，处理室设置在真空容器的内部，并且具有内部空间，其中产生用于处理待处理样品的等离子体，其中放置样品，用于将等离子体产生的气体供应到 处理室，用于在处理室内抽真空的真空抽气单元，设置在真空容器外部的螺旋谐振线圈构成的螺旋谐振器和设置在线圈外部的电接地屏蔽，RF频率可变频率供给给定范围内的RF电力 谐振线圈和频率匹配装置，其能够调整RF电源的频率，以便使反射的RF功率最小化。 谐振线圈具有设定为给定频率的一个波长的整数倍的电长度。 螺旋谐振线圈使用可变电容器件将馈电点连接到地电位。

    HYBRID PLASMA REACTOR
    48.
    发明申请
    HYBRID PLASMA REACTOR 审中-公开
    混合等离子体反应器

    公开(公告)号：US20130307414A1

    公开(公告)日：2013-11-21

    申请号：US13673513

    申请日：2012-11-09

    Applicant: Dae-Kyu CHOI

    Inventor： Dae-Kyu CHOI

    IPC: H01J37/32

    CPC classification number: H01J37/32816 ,  H01J37/321

    Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

    Abstract translation: 混合等离子体反应器包括具有等离子体放电空间的反应器主体，气体入口和气体出口; 混合等离子体源，包括感应耦合到等离子体放电空间中形成的等离子体的感应天线和耦合到等离子体并缠绕在磁芯中的初级绕组线圈变压器; 以及用于向感应天线和初级绕组线圈提供等离子体产生功率的交替开关电源。 混合等离子体反应器使用电感耦合等离子体源和变压器耦合的等离子体源诱导等离子体放电，使得其具有从低压区域到高压区域的宽操作区域。

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