公开(公告)号：US20030230986A1

公开(公告)日：2003-12-18

申请号：US10170512

申请日：2002-06-12

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H05B031/26

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump;. Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US06534775B1

公开(公告)日：2003-03-18

申请号：US09654380

申请日：2000-09-01

Applicant: Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

Inventor： Eric R. Harrington ,  Victor M. Benveniste ,  Michael A. Graf ,  Robert D. Rathmell

IPC: H01J3730

CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/3002 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/31705

Abstract: A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.

Abstract translation: 用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。 夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。 下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。

公开(公告)号：US6025602A

公开(公告)日：2000-02-15

申请号：US66180

申请日：1998-04-23

Applicant: Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

Inventor： Peter H. Rose ,  Julian G. Blake ,  Adam A. Brailove ,  Zhongmin Yang ,  Richard F. McRay ,  Barbara J. Hughey

IPC: H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/677 ,  H01L21/683 ,  H01J37/20

CPC classification number: H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.

Abstract translation: 一种快速有效地处理大量工件的离子注入系统，如平板显示器。 离子注入系统包括安装离子源的高真空处理室，单个工件平移台和负载锁。 安装在处理室内的单个工件处理组件都将工件从装载锁上移除，并通过由离子源产生的离子束在植入期间支撑工件。 处理室与负载锁组件选择性地流体连通，负载锁组件又与工件加载或终端机械地集成。 另外，工件处理组件包括用于在植入期间沿线性扫描方向平移工件的平移台或元件。 该线性扫描方向沿着与植入系统的水平纵向轴线横向或正交的路径延伸。 根据一个实践，扫描方向和纵向轴线之间形成小于或等于约85度的角度。

公开(公告)号：US20240331973A1

公开(公告)日：2024-10-03

申请号：US18611098

申请日：2024-03-20

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Yuya UCHIDA ,  Hiroaki KAI

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/31705

Abstract: An ion beam irradiation method includes irradiating, with an ion beam having a first irradiation energy, a rear member located behind an irradiation position in a state in which a target is retracted from the irradiation position, collecting particles generated by irradiating the rear member with the ion beam having the first irradiation energy by conveying a collecting member in a transport direction in front of the rear member, and irradiating, with an ion beam having a second irradiation energy, the target at the irradiation position.

公开(公告)号：US12080510B2

公开(公告)日：2024-09-03

申请号：US18378421

申请日：2023-10-10

Applicant: mi2-factory GmbH

Inventor： Florian Krippendorf ,  Constantin Csato

IPC: H01J37/05 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/002 ,  H01J2237/047 ,  H01J2237/057 ,  H01J2237/31705 ,  H01J2237/3171

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

公开(公告)号：US11699570B1

公开(公告)日：2023-07-11

申请号：US17665970

申请日：2022-02-07

Applicant: Applied Materials, Inc.

Inventor： Supakit Charnvanichborikarn ,  Wei Zou ,  Hans-Joachim L. Gossmann ,  Qintao Zhang ,  Aseem Kumar Srivastava ,  William Robert Bogiages, Jr. ,  Wei Zhao

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/31705

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

公开(公告)号：US20170040141A1

公开(公告)日：2017-02-09

申请号：US14817893

申请日：2015-08-04

Applicant: Axcelis Technologies, Inc.

Inventor： Armin Huseinovic ,  Joseph Ferrara ,  Brian Terry

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/683 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/185 ,  H01J37/3171 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/31705 ,  H01L21/26593 ,  H01L21/67109 ,  H01L21/67213 ,  H01L21/6831

Abstract: An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. An isolation chamber is coupled to the process chamber with a pre-implant cooling environment defined therein. An isolation gate valve selectively isolates the pre-implant cooling environment from the process environment wherein the isolation chamber comprises a pre-implant cooling workpiece support for supporting and cooling the workpiece. The isolation gate valve is the only access path for the workpiece to enter and exit the isolation chamber. A pressurized gas selectively pressurizes the pre-implant cooling environment to a pre-implant cooling pressure that is greater than the process pressure for expeditious cooling of the workpiece. A workpiece transfer arm transfer the workpiece between the load lock chamber, isolation chamber, and chuck. A controller controls the workpiece transfer arm selectively cools the workpiece to a pre-implant cooling temperature in the isolation chamber at the pre-implant cooling pressure via a control of the isolation gate valve, pre-implant cooling workpiece support, and pressurized gas source.

Abstract translation: 离子注入系统具有处理室，其具有工艺环境，以及离子注入装置，被配置为将离子注入到由处理室内的卡盘支撑的工件中。 加载锁定室将工艺（真空）环境与大气环境隔离，其中负载锁定工件支撑件支撑其中的工件。 隔离室通过在其中限定的植入前冷却环境耦合到处理室。 隔离闸阀选择性地将植入前冷却环境与过程环境隔离，其中隔离室包括用于支撑和冷却工件的植入物前冷却工件支撑件。 隔离闸阀是工件进出隔离室的唯一进入路径。 加压气体选择性地将植入物前冷却环境加压到大于工艺压力的植入前冷却压力，以便于快速冷却工件。 工件传送臂在加载锁定室，隔离室和卡盘之间传送工件。 控制器控制工件传送臂通过隔离闸阀，预植入物冷却工件支撑件和加压气体源的控制，以预植入物冷却压力选择性地将工件冷却至隔离室中的植入前冷却温度。

公开(公告)号：US09318298B2

公开(公告)日：2016-04-19

申请号：US14536946

申请日：2014-11-10

Applicant: Sumitomo Heavy Industries Ion Technology Co., Ltd.

Inventor： Masateru Sato

IPC: G21K5/00 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.

Abstract translation: 离子发生器具有：至少部分由含碳材料组成的电弧室; 将热电子发射到电弧室中的热电子发射体; 以及将源气体和复合气体引入电弧室的气体导入器。 被引入电弧室的源气体含有卤化物气体，导入电弧室的化合物气体含有具有碳原子和氢原子的化合物。

公开(公告)号：US09236216B2

公开(公告)日：2016-01-12

申请号：US13566013

申请日：2012-08-03

Applicant: William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

Inventor： William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

IPC: H01J37/18 ,  H01L21/677 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01J37/18 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/204 ,  H01J2237/31705 ,  H01L21/02002 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/67766

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract translation: 离子注入系统向位于冷却卡盘上的处理室的真空环境中的工件提供离子。 处理室内的预冷站具有构造成将工件冷却到第一温度的冷冻工件支撑件，并且处理室内的后加热站具有被配置为将工件加热到第二温度的加热工件支撑件。 第一温度低于处理温度，第二温度大于外部温度。 工件传送臂还被构造成在卡盘，加载锁定室，预冷站和后加热站之间的两个或更多个之间同时传送两个或更多个工件。

公开(公告)号：US20150132929A1

公开(公告)日：2015-05-14

申请号：US14397953

申请日：2013-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Horigome ,  Hirokazu Ueda ,  Masahiro Oka ,  Masahiro Yamazaki ,  Takenao Nemoto

IPC: H01L21/223 ,  H01L21/22 ,  H01J37/32

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/31705 ,  H01J2237/3365 ,  H01L21/2225

Abstract: Provided is a method for injecting a dopant into a substrate to be processed. A method in one embodiment of the present invention includes: (a) a step for preparing, in a processing container, a substrate to be processed; and (b) a step for injecting a dopant into the substrate by supplying a doping gas containing AsH3, an inert gas, and H2 gas to the inside of the processing container, and applying plasma excitation energy to the inside of the processing container. In the step of injecting the dopant, the ratio of hydrogen partial pressure to the gas total pressure in the processing container is set within the range of 0.0015-0.003.

Abstract translation: 提供了将掺杂剂注入待处理的基板中的方法。 本发明的一个实施方案中的方法包括：（a）在处理容器中制备待处理的基材的步骤; 和（b）通过向处理容器的内部供给含有AsH 3，惰性气体和H 2气体的掺杂气体，并向处理容器的内部施加等离子体激发能量，将掺杂剂注入基板的工序。 在注入掺杂剂的步骤中，处理容器中的氢分压与气体总压的比例设定在0.0015-0.003的范围内。