Abstract:
An electron gun having an electron source emitting electrons includes: an acceleration electrode which accelerates the electrons; an extraction electrode which has a spherical concave surface having the center on an optical axis and facing the electron emission surface, and which extracts an electron from the electron emission surface; and a suppressor electrode which suppresses electron emission from a side surface of the electron source. In the electron gun, an electric field is applied to the electron emission surface while the electron source is kept at a low temperature in such an extent that sublimation of a material of the electron source would not be caused, to cause the electron source to emit a thermal field emission electron.
Abstract:
An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.
Abstract:
An electron beam source comprises a source surface illuminated with a photon beam of adjustable intensity. The photon beam assists emission of electrons from the source surface due to a photo effect. An electric extraction field further assists in electron emission. Further, a heater is provided for further assisting in electron emission by a thermionic effect. An electron beam current is measured, and the intensity of the photon beam is adjusted based on the measured electron beam current.
Abstract:
An electron source has an anode and a cathode that is capable of being negatively biased relative to the anode, the cathode having an electron emitting portion and a cathode axis. An electromagnetic radiation source is adapted to generate an electromagnetic radiation beam to heat the cathode. A lens is adapted to direct the electromagnetic radiation beam onto the cathode, the lens having a lens axis that forms an acute angle with, or is substantially parallel to, the cathode axis of the electron emitting portion.
Abstract:
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.
Abstract:
The invention which relates to a device for the generating of electron beams with a vacuum chamber, in which a massive cathode (10) is arranged with a wire cathode (14) arranged above and a aperture anode (17) below the massive cathode (10) and whom below the aperture anode (17) focusing and/or deflecting magnet arrangements are provided which direct an electron beam (23) emitted by the massive cathode (10) and accelerated by the aperture anode (17) to a processing location (22), has the basic task to make the power of such devices variable over a large range using simple mechanical means. According to the invention the task is solved by arranging the aperture anode (17) rigidly and the massive cathode (10) and the wire cathode (14) axially movable within the vacuum chamber (1). For the movements of the massive cathode (10) and the wire cathode (14) contact means are provided which follow their movements and lead to the outside of the vacuum chamber (1). In addition for the axial movement of the massive cathode (10) a motion means is provided connected with the cathode (Figure).
Abstract:
The electron source of an electron beam apparatus comprises a cathode wire which is to be heated by a laser beam and which is to be displaced in the wire direction. This cathode wire has a thickness of from 10 to 30 microns. By applying a field strength of 105 to 106 KV/m to the heated wire tip and by controlling the laser intensity and the wire feed during operation by a signal derived from the emission of the wire tip, a tip is produced on the wire end having a curvature radius of approximately 1 micron. At a temperature just below the melting temperature of the wire a stable temperature field emission having a current density of up to better than 104 A/cm2 is thus realized.