Abstract:
One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.
Abstract:
The electric charged particle beam microscope includes an electric charged particle source; a condenser lens converging electric charged particles emitted from the electric charged particle source on a specimen; a deflector scanning the converged electric charged particles over the specimen; a control unit of the deflector; a specimen stage on which the specimen is mounted; a detector detecting the electric charged particles; a computer forming an image from a control signal from the deflector and an output signal from the detector; and a display part connected with the computer. The control unit of the deflector can change the scan rate of the electric charged particles. A first rate scan image is obtained at a first rate and a second rate scan image is obtained at a second rate slower than the first rate.
Abstract:
A system comprises an electron beam directed toward a three-dimensional object with one tilting angle and at least two azimuth angles, a detector configured to receive a plurality of scanning electron microscope (SEM) images from the three-dimensional object and a processor configured to calculate a height and a sidewall edge of the three-dimensional object.
Abstract:
The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.
Abstract:
The present invention aims at providing a pattern dimension measuring device that realizes the measurement of a dimension of a pattern difficult to set up a measurement box, or between patterns away from each other with high precision. In order to achieve the above object, a pattern dimension measuring device is proposed which moves a field of view with reference to a first pattern formed on the specimen on the basis of predetermined first distance information, acquires a first image, executes template matching with the use of the first image and a matching template, and calculates a distance between a second pattern included in the first image and the first pattern on the basis of second distance information obtained by the template matching, and the first distance information.
Abstract:
A method and apparatus for performing a slice and view technique with a dual beam system. The feature of interest in an image of a sample is located by machine vision, and the area to be milled and imaged in a subsequent slice and view iteration is determined through analysis of data gathered by the machine vision at least in part. A determined milling area may be represented as a bounding box around a feature, which dimensions can be changed in accordance with the analysis step. The FIB is then adjusted accordingly to slice and mill a new face in the subsequent slice and view iteration, and the SEM images the new face. Because the present invention accurately locates the feature and determines an appropriate size of area to mill and image, efficiency is increased by preventing the unnecessary milling of substrate that does not contain the feature of interest.
Abstract:
A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.
Abstract:
A method for aligning a sample that is placed in the vacuum chamber so that the sample is oriented normal to the focused ion beam is disclosed. The locations of different spots on the sample surface are determined using a focusing routine. The locations of the different spots are used to create an image line or an image plane that determines the proper calibrations that are needed. The image line or image plane is then used to calibrate the sample stage so that the sample is aligned substantially normal to the focused ion beam.
Abstract:
A method comprises directing an electron beam toward a sidewall of a three-dimensional region of a semiconductor device with a tilting angle and a first azimuth angle, detecting a first projection distance of the sidewall through a detector placed over the semiconductor device, directing the electron beam toward the sidewall with the tilting angle and a second azimuth angle, detecting a second projection distance of the sidewall, calculating a height of the three-dimensional region using a first function, wherein the first function includes the first tilting angle, the first azimuth angle, the second azimuth angle and the projection distance of the sidewall and calculating a sidewall edge of the three-dimensional region using a second function, wherein the second function includes the first azimuth angle, the second azimuth angle and the projection distance of the sidewall.
Abstract:
A method of testing for photomask print errors includes dividing a photomask print into sub-regions and inspecting each sub-region with a different (e.g., electron) beam column, each sub-region aligned with a beam column axis during a calibration process. The different sub-regions may be inspected on different photomask prints on a wafer plane.