Method of etching variable depth features in a crystalline substrate
    71.
    发明申请
    Method of etching variable depth features in a crystalline substrate 失效
    在晶体衬底中蚀刻可变深度特征的方法

    公开(公告)号:US20040053505A1

    公开(公告)日:2004-03-18

    申请号:US10247467

    申请日:2002-09-18

    Abstract: Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.

    Abstract translation: 本文公开了一种在晶体衬底(例如单晶硅衬底)中对不同深度蚀刻特征的易于且良好集成的方法。 该方法利用专门的掩蔽过程并利用高选择性蚀刻工艺。 该方法提供了一个互连的,可变深度的储层和通道的系统。 用于蚀刻通道的等离子体可以设计成提供约200nm或更小的侧壁粗糙度。 所得结构可用于各种MEMS应用,包括用于半导体应用的生物医学MEMS和MEMS。

    Package structure and method for manufacturing the same

    公开(公告)号:US11970388B2

    公开(公告)日:2024-04-30

    申请号:US17550607

    申请日:2021-12-14

    Inventor: Jin-Neng Wu

    Abstract: A package structure and its manufacturing method are provided. The package structure includes a substrate with a recess, and a first MEMS chip, a first intermediate chip, a second MEMS chip and a first capping plate sequentially formed on the substrate. The lower surface of the first MEMS chip has a first sensor or a microactuator. The upper surface of the second MEMS chip has a second sensor or a microactuator. The first intermediate chip has a through-substrate via, and includes a signal conversion unit, a logic operation unit, a control unit, or a combination thereof. The package structure includes at least one of the first sensor and the second sensor.

    MEMS GAS SENSOR, ARRAY THEREOF AND PREPARATION METHOD THEREFOR

    公开(公告)号:US20230204554A1

    公开(公告)日:2023-06-29

    申请号:US17913095

    申请日:2020-07-10

    CPC classification number: G01N33/0031 B81B7/04 G01N33/0073 B81B2201/0214

    Abstract: A MEMS gas sensor (A), array thereof, and preparation method therefor. The MEMS gas sensor comprises a first substrate (A2) provided with a first cavity (A1), and N gas detection assemblies (A3) provided at an opening of A1, each A3 comprises: a supporting arm (A31) and a gas detection part (A32) provided on the A31; the A32 comprises a strip-shaped heating electrode part (A321), an insulating layer (A322), a strip-shaped detection electrode part (A323), and a gas-sensitive material part (A324) that are stacked sequentially; the A323 comprises a first detection electrode part (A323-1) and a second detection electrode part (A323-2) with a first opening (A325) therebetween; the A324 is provided at the A325; a first end of the A324 is connected to the A323-1, a second end of the A324 is connected to the A323-2; strip-shaped heating electrode parts in each A3 are connected sequentially to form a heater (A8).

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