公开(公告)号：US20180222746A1

公开(公告)日：2018-08-09

申请号：US15941465

申请日：2018-03-30

Applicant: Kionix, Inc.

Inventor： Scott G. Adams ,  Charles W. Blackmer

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/532 ,  H01L21/768 ,  H01L21/306 ,  H01L23/48

CPC classification number: B81B7/007 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  H01L21/30604 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5329

Abstract: Disclosed is a method of forming an interconnect in a substrate having a first surface and a second surface. The method includes forming an insulating structure abutting the first surface and defining a closed loop around a via in the substrate and forming an insulating region abutting the second surface such that the insulating region contacts the insulating structure and separates the via from a bulk region of the substrate. Forming the insulating structure includes etching the substrate beginning from the first surface to form a trench, filling the trench to form a seam portion, and converting a first portion of the substrate to a first solid portion to form the closed loop.

公开(公告)号：US10011480B2

公开(公告)日：2018-07-03

申请号：US15403424

申请日：2017-01-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US10005661B2

公开(公告)日：2018-06-26

申请号：US15215182

申请日：2016-07-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: H01H1/10 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US09961450B2

公开(公告)日：2018-05-01

申请号：US15246561

申请日：2016-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Weng-Yi Chen ,  En-Chan Chen ,  Shih-Wei Li ,  Guo-Chih Wei

IPC: H01L29/84 ,  H04R17/02 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00 ,  H04R19/00

CPC classification number: H04R17/025 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/06 ,  H04R7/04 ,  H04R7/20 ,  H04R17/02 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003

Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.

公开(公告)号：US09902610B2

公开(公告)日：2018-02-27

申请号：US15155448

申请日：2016-05-16

Applicant: Foresee Technology Corp..

Inventor： Chien-Chan Chen ,  Yi-Der Liang ,  Shiao-Yi Lin ,  Cheng-Kuang Yang

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00 ,  H04R19/00 ,  H04R19/04

CPC classification number: B81B3/0054 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/0714 ,  B81C2203/0735 ,  H04R19/005 ,  H04R19/04

Abstract: A support pillar is formed under a movable film for support. The support pillar includes a plurality of first metal micropillars, a base metal connection pillar layer and a first oxide encapsulation layer. The first metal micropillars are formed under the movable film and conductively connected to the movable film via metal connection. The base metal connection pillar layer is formed under the first metal micropillars and conductively connected to the first metal micropillars. The first oxide encapsulation layer fully or partially encapsulates the first metal micropillars to insulate the first metal micropillars from air, and shape the support pillar into a column shape.

公开(公告)号：US20180050903A1

公开(公告)日：2018-02-22

申请号：US15787023

申请日：2017-10-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09890036B2

公开(公告)日：2018-02-13

申请号：US15429636

申请日：2017-02-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: H01L21/00 ,  H01L21/31 ,  H01L21/469 ,  B81B7/00 ,  B81C1/00 ,  G02B26/08 ,  G02B6/42 ,  G02B26/00 ,  B82Y30/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

公开(公告)号：US09878904B1

公开(公告)日：2018-01-30

申请号：US15333810

申请日：2016-10-25

Applicant: Rosemount Aerospace Inc.

Inventor： David P. Potasek

IPC: B81C3/00 ,  B81B3/00

CPC classification number: B81C3/001 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0172 ,  G01L9/0042 ,  G01L19/148

Abstract: A MEMS device with electronics integration places integrated circuit components on a topping wafer of a sensing die to conserve space, minimize errors and reduce cost of the device as a whole. The topping wafer is bonded to a sensing wafer and secured in a housing.

公开(公告)号：US09764944B2

公开(公告)日：2017-09-19

申请号：US14840434

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H01H51/22 ,  B81B3/00 ,  H01L41/113 ,  B81C1/00 ,  H01H57/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09715107B2

公开(公告)日：2017-07-25

申请号：US14599507

申请日：2015-01-18

Applicant: APPLE INC.

Inventor： Yuval Gerson ,  Naftali Chayat ,  Noel Axelrod ,  Alexander Shpunt

IPC: G02B26/10 ,  G01S17/10 ,  G01S17/42 ,  G01S7/481 ,  G02B26/08 ,  B81C1/00 ,  G01S17/89

CPC classification number: G02B26/101 ,  B81B2201/04 ,  B81C1/0015 ,  B81C2201/013 ,  G01S7/4817 ,  G01S17/10 ,  G01S17/42 ,  G01S17/89 ,  G02B26/085

Abstract: A scanning device includes a substrate, which is etched to define an array of two or more parallel rotating members and a gimbal surrounding the rotating members. First hinges connect the gimbal to the substrate and defining a first axis of rotation, about which the gimbal rotates relative to the substrate. Second hinges connect the rotating members to the support and defining respective second, mutually-parallel axes of rotation of the rotating members relative to the support, which are not parallel to the first axis.