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    Particle-optical projection system
    71.
    发明申请
    Particle-optical projection system 审中-公开
    粒子投影系统

    公开(公告)号：US20050201246A1

    公开(公告)日：2005-09-15

    申请号：US11080578

    申请日：2005-03-15

    Applicant: Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

    Inventor： Herbert Buschbeck ,  Gertraud Lammer ,  Alfred Chalupka ,  Robert Nowak ,  Elmar Platzgummer ,  Gerhard Stengl

    IPC: H01L21/027 ,  G03F7/20 ,  G11B7/09 ,  H01J37/02 ,  H01J37/147 ,  H01J37/15 ,  H01J37/20 ,  H01J37/21 ,  H01J37/304 ,  H01J37/317

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/21 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/10 ,  H01J2237/216 ,  H01J2237/30455

    Abstract: In a particle-optical projection system (32) a pattern (B) is imaged onto a target (tp) by means of energetic electrically charged particles. The pattern is represented in a patterned beam (pb) of said charged particles emerging from the object plane through at least one cross-over (c); it is imaged into an image (S) with a given size and distortion. To compensate for the Z-deviation of the image (S) position from the actual positioning of the target (tp) (Z denotes an axial coordinate substantially parallel to the optical axis cx), without changing the size of the image (S), the system comprises a position detection means (ZD) for measuring the Z-position of several locations of the target (tp), a control means (33) for calculating modifications (cr) of selected lens parameters of the final particle-optical lens (L2) and controlling said lens parameters according to said modifications.

    Abstract translation: 在粒子光学投影系统（32）中，通过能量带电粒子将图案（B）成像到目标（tp）上。 所述图案通过至少一个交叉（c）从所述物体平面出射的所述带电粒子的图案化束（pb）中表示; 它被成像为具有给定大小和失真的图像（S）。 为了补偿图像（S）位置与目标的实际定位（tp）（Z表示基本上平行于光轴cx的轴向坐标）的Z偏差，而不改变图像（S）的尺寸， 该系统包括用于测量目标（tp）的若干位置的Z位置的位置检测装置（ZD），用于计算最终粒子光学透镜的选定透镜参数的修改（cr）的控制装置（33） L 2），并根据所述修改来控制所述透镜参数。

    Spot grid array electron imaging system
    73.
    发明申请
    Spot grid array electron imaging system 有权
    点阵阵列电子成像系统

    公开(公告)号：US20030085353A1

    公开(公告)日：2003-05-08

    申请号：US09986137

    申请日：2001-11-07

    Inventor： Gilad Almogy ,  Oren Reches

    IPC: H01J037/28

    CPC classification number: H01J37/28 ,  H01J2237/024 ,  H01J2237/0635 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/2817

    Abstract: A high data-rate electron beam spot-grid array imaging system is provided that overcomes the low resolution and severe linearity requirements of prior art systems. Embodiments include an imaging system comprising an electron beam generator for simultaneously irradiating an array of spots spaced apart from each other on a surface of an object to be imaged, and a detector for collecting backscattered and/or secondary electrons emitted as a result of the interaction of the spots with the surface of the object to form an image of the irradiated portions of the object surface. A mechanical system moves the substrate in a direction which is nearly parallel to an axis of the array of spots such that as the substrate is moved across the spot array in the scan direction (the y-direction) the spots trace a path which leaves no gaps in the mechanical cross-scan direction (the x-direction). A compensator, such as a servo or a movable mirror, compensates for mechanical inaccuracies in the moving stage, thereby increasing imaging accuracy. In other embodiments, multiple detectors placed at different angles to the substrate collect electrons to provide multiple perspective imaging of the substrate surface.

    Abstract translation: 提供了高数据速率电子束点阵阵列成像系统，其克服了现有技术系统的低分辨率和严格的线性要求。 实施例包括一种成像系统，包括电子束发生器，用于同时照射待成像物体的表面上彼此间隔开的点阵列，以及用于收集由于相互作用而发射的反向散射和/或二次电子的检测器 具有物体表面的斑点以形成物体表面的照射部分的图像。 机械系统使基板沿着几乎平行于点阵列的轴线的方向移动，使得当基板在扫描方向（y方向）上移动穿过光点阵列时，斑点追踪不留下的路径 机械横向扫描方向（x方向）的间隙。 诸如伺服或可移动镜的补偿器补偿了移动台中的机械不准确度，从而提高了成像精度。 在其他实施例中，以与衬底不同的角度放置的多个检测器收集电子以提供衬底表面的多个透视成像。

    Apparatus to decelrate and control ion beams to improve the total quality of ion implantation
    74.
    发明申请
    Apparatus to decelrate and control ion beams to improve the total quality of ion implantation 有权
    减少和控制离子束的装置，以提高离子注入的总质量

    公开(公告)号：US20030066976A1

    公开(公告)日：2003-04-10

    申请号：US10299443

    申请日：2002-11-19

    Inventor： Jiong Chen ,  Zhmin Wan ,  Qing Qian

    IPC: H01J037/317

    CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/24405 ,  H01J2237/24528

    Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

    Abstract translation: 在本发明中公开了一种离子注入方法。 所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。 该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转 离子束返回到原始离子束路径，用于植入目标晶片。

    Fabrication method for semiconductor devices and transparent mask for charged particle beam
    75.
    发明授权
    Fabrication method for semiconductor devices and transparent mask for charged particle beam 失效
    半导体器件的制造方法和带电粒子束的透明掩模

    公开(公告)号：US5036209A

    公开(公告)日：1991-07-30

    申请号：US424733

    申请日：1989-10-20

    Applicant: Toyotaka Kataoka ,  Kiichi Sakamoto

    Inventor： Toyotaka Kataoka ,  Kiichi Sakamoto

    IPC: G03F1/00 ,  G03F1/20 ,  G03F7/20 ,  H01J37/09 ,  H01J37/317

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F7/2047 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/15 ,  H01J2237/31776

    Abstract: A charged particle beam exposure apparatus includes a charged particle beam generator, a deflector device for deflecting the charged particle beam electromagnetically to individually illuminate small areas of a pattern forming region formed on a transparent mask, apparatus for moving the transparent mask mechanically, and the various components required for reducing the charged particle beam pattern through the mask and projecting the same onto a semiconductor device substrate to be exposed. A semiconductor device is fabricated using such apparatus by moving the mask mechanically to position a pattern forming region at a predetermined exposure position. The pattern forming region includes a plurality of small areas which can be individually selected by deflecting the charged particle beam when the pattern forming region is positioned at the exposure position. Each individual area is of a size such that the entirety thereof is exposed when the beam is deflected onto such area.

    Abstract translation: 在带电粒子束曝光装置中，包括用于产生带电粒子束（20）的装置（21-23），用于电磁地偏转带电粒子束（20）的偏转装置（24）并照射多个 构成形成在透明掩模（26）上的多个聚集隔板（27）的一个聚集隔板（27）的小隔板（28）; 用于机械地移动透明掩模（26）的掩模移动装置和用于减小通过掩模（26）图案化的带电粒子束（20）的减少曝光装置（30-34），并将其暴露于半导体器件（35）上 ），制造半导体器件（35）的方法包括以下步骤：通过掩模移动装置将多个聚集隔板（27）中的一个聚集隔板（27）移动到预定位置; 通过所述偏转装置（24）从所述移动的聚集隔板（27）的所述多个小隔板（28）中选择一个小隔板（28）; 并且通过所述还原曝光装置（30-34）减小所选择的小分区（28）并将其暴露在所述半导体器件（35）上。

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