System for electron beam detection
    71.
    发明授权

    公开(公告)号:US09778186B2

    公开(公告)日:2017-10-03

    申请号:US14686308

    申请日:2015-04-14

    Abstract: An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly.

    CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD
    73.
    发明申请
    CHARGED PARTICLE BEAM DRAWING APPARATUS AND CHARGED PARTICLE BEAM DRAWING METHOD 有权
    充电颗粒光束绘图装置和充电颗粒光束绘图方法

    公开(公告)号:US20160343535A1

    公开(公告)日:2016-11-24

    申请号:US15070679

    申请日:2016-03-15

    Inventor: Hideki MATSUI

    Abstract: In one embodiment, a charged particle beam drawing apparatus deflects a charged particle beam with a deflector to draw a pattern. The apparatus includes a storage unit that stores an approximate formula indicating a correspondence relationship between a settling time for a DAC amplifier that controls the deflector, and a position shift amount, from a design position, of a drawn position of each evaluation pattern drawn on a first substrate while the settling time and an amount of deflection by the deflector are changed, a shot position correction unit that creates a correction formula indicating a relationship between an amount of deflection and a shot position shift amount at the settling time, from the approximate formula and the settling time for the DAC amplifier based on an amount of deflection of a shot, obtains a position correction amount by using the amount of deflection of the shot and the correction formula, and corrects a shot position defined by the shot data based on the position correction amount, and a drawing unit that performs drawing by using the shot data with a corrected shot position.

    Abstract translation: 在一个实施例中,带电粒子束描绘装置使带电粒子束偏转导流板以绘制图案。 该装置包括:存储单元,存储表示在控制偏转器的DAC放大器的建立时间之间的对应关系的近似式,以及从设计位置到绘制在每个评估图案的绘制位置的位置偏移量 第一基板,同时改变了偏转器的稳定时间和偏转量;拍摄位置校正单元,从近似公式产生指示偏转量与拍摄位置偏移量之间的关系的校正公式, 并且基于射击偏转量的DAC放大器的建立时间,通过使用镜头的偏转量和校正公式来获得位置校正量,并且基于镜头数据来校正由镜头数据定义的镜头位置 位置校正量,以及通过使用具有校正的拍摄位置的拍摄数据进行绘制的绘图单元。

    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM
    74.
    发明申请
    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM 审中-公开
    使用离子束处理基板的装置和方法

    公开(公告)号:US20160189925A1

    公开(公告)日:2016-06-30

    申请号:US15062692

    申请日:2016-03-07

    Abstract: A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.

    Abstract translation: 一种用计算机程序编码的计算机可读记录介质,用于执行使用离子束蚀刻装置蚀刻布置在基板保持器上的基板的离子蚀刻方法。 计算机程序包括具有执行第一步骤的命令的递减控制程序; 以及具有执行第二步骤的指令的增量控制程序。

    Customizing a particle-beam writer using a convolution kernel
    75.
    发明授权
    Customizing a particle-beam writer using a convolution kernel 有权
    使用卷积内核自定义粒子束写入器

    公开(公告)号:US09373482B2

    公开(公告)日:2016-06-21

    申请号:US14795547

    申请日:2015-07-09

    Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

    Abstract translation: 计算曝光图案,其用于在带电粒子多光束处理装置中的目标上曝光期望图案,以便匹配可能具有不同类型的参考写入工具:期望的图案被提供为适当的图形表示 用于参考工具,如光栅图形,在目标上的图像区域上。 使用卷积核,其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案,所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

    Electron beam writing apparatus, and method for adjusting convergence half angle of electron beam
    76.
    发明授权
    Electron beam writing apparatus, and method for adjusting convergence half angle of electron beam 有权
    电子束写入装置,以及用于调整电子束的会聚半角的方法

    公开(公告)号:US09336980B2

    公开(公告)日:2016-05-10

    申请号:US14663971

    申请日:2015-03-20

    Inventor: Haruyuki Nomura

    Abstract: An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.

    Abstract translation: 电子束写入装置包括与电子枪系统相对于光轴方向布置在下游侧的发射电子束的电子枪系统,高度调节单元,以可变地调节电子枪的高度位置 系统,电子透镜,相对于光轴方向布置在与高度调节单元相比的下游侧,以使电子束会聚;透镜控制单元,用于控制电子枪的每个可变调节和改变的高度位置 系统,使电子束在预定位置形成交叉的电子透镜,以及与电子透镜相对于光轴方向配置在下游侧的物镜,以聚焦通过电子的电子束 镜片。

    Multi charged particle beam writing apparatus
    77.
    发明授权
    Multi charged particle beam writing apparatus 有权
    多带电粒子束写入装置

    公开(公告)号:US09299535B2

    公开(公告)日:2016-03-29

    申请号:US14638786

    申请日:2015-03-04

    Abstract: A multi charged particle beam writing apparatus includes an aperture member to form multiple beams, a blanking plate in which there are arranged a plurality of blankers to respectively perform blanking deflection for a corresponding beam in the multiple beams having passed through a plurality of openings of the aperture member, a blanking aperture member to block each beam having been deflected to be in OFF state by at least one of the plurality of blankers, a first grating lens, using the aperture member as gratings, to correct spherical aberration of the charged particle beam, and a correction lens configured to correct high order spherical aberration produced by the first grating lens.

    Abstract translation: 多带电粒子束写入装置包括形成多个光束的孔径构件,其中布置有多个遮挡件,以分别对通过多个光束的多个光束的多个光束中的相应光束执行消隐偏转 孔径构件,用于阻挡已经被多个遮挡件中的至少一个偏转到处于关闭状态的每个光束的消隐孔径构件,使用孔径构件作为光栅的第一光栅透镜,以校正带电粒子束的球面像差 以及配置为校正由第一光栅透镜产生的高阶球面像差的校正透镜。

    MULTI CHARGED PARTICLE BEAM WRITING METHOD, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS
    78.
    发明申请
    MULTI CHARGED PARTICLE BEAM WRITING METHOD, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS 有权
    多电荷粒子束写入方法和多重粒子束写入装置

    公开(公告)号:US20150340196A1

    公开(公告)日:2015-11-26

    申请号:US14699216

    申请日:2015-04-29

    Abstract: A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.

    Abstract translation: 多带电粒子束写入方法包括:除了用于跟踪控制的光束偏转之外,通过执行多带电粒子束的另一束偏转,将每个相应光束的写入位置移位到下一个写入位置,同时继续光束偏转 最大写入时间后的跟踪控制已过; 在相应的写入时间期间,将每个对应的波束处于“接通”状态,并将其发送到已经被移位的每个相应波束的下一个写入位置,同时继续跟踪控制; 并且返回跟踪位置,使得下一个跟踪开始位置是跟踪控制开始的前一个跟踪开始位置,通过在将每个对应的波束发射到至少已经移位的下一个写入位置之后将跟踪控制的光束偏转重置 在每个对应的光束中一次,同时继续跟踪控制。

    MASS SELECTOR, AND ION GUN, ION IRRADIATION APPARATUS AND MASS MICROSCOPE
    80.
    发明申请
    MASS SELECTOR, AND ION GUN, ION IRRADIATION APPARATUS AND MASS MICROSCOPE 有权
    大量选择器和离子枪,离子辐照装置和大容量显微镜

    公开(公告)号:US20140252225A1

    公开(公告)日:2014-09-11

    申请号:US14190289

    申请日:2014-02-26

    Inventor: Kota Iwasaki

    Abstract: When a time-of-flight mass selector having a chopper using a deflector selects the masses of the ions, an ion beam is deflected. As a result, at least a part of the ion beams diagonally pass through an aperture electrode with respect to the axis. Accordingly, there has been a problem that a position on an object irradiated with a cluster ion beam, results in moving. This mass selector includes: a flight tube having an equipotential space that makes a charged substance fly therein; a deflector that is installed in a downstream side with respect to the flight tube in a direction in which the charged substance flies; a first aperture electrode that is installed in a downstream side with respect to the deflector in a direction in which the charged substance flies; and a second aperture electrode that is installed in between the deflector and the first aperture electrode.

    Abstract translation: 当具有使用偏转器的斩波器的飞行时间质量选择器选择离子的质量时,离子束被偏转。 结果,至少一部分离子束相对于轴线对角地穿过孔电极。 因此,存在用聚簇离子束照射的物体上的位置导致移动的问题。 该质量选择器包括:具有使带电物质在其中飞行的等电位空间的飞行管; 偏转器,其安装在相对于所述飞行管的下游侧,所述偏转器沿所述带电物质飞行的方向; 第一孔电极,其安装在相对于所述偏转器的下游侧,所述第一孔电极沿所述带电物质飞行的方向; 以及安装在偏转器和第一孔径电极之间的第二孔径电极。

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