Abstract:
An electron beam detection apparatus includes a first aperture element including a first set of apertures. The apparatus includes a second aperture element including a second set of apertures. The second set of apertures is arranged in a pattern corresponding with the pattern of the first plurality of apertures. The detection apparatus includes an electron-photon conversion element configured to receive electrons of the electron beam transmitted through the first and second aperture elements. The electron-photon conversion element is configured to generate photons in response to the received electrons. The detection apparatus includes an optical assembly including one or more optical elements. The detection apparatus includes a detector assembly. The optical elements of the optical assembly are configured to direct the generated photons from the electron-photon conversion system to the detector assembly.
Abstract:
A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.
Abstract:
In one embodiment, a charged particle beam drawing apparatus deflects a charged particle beam with a deflector to draw a pattern. The apparatus includes a storage unit that stores an approximate formula indicating a correspondence relationship between a settling time for a DAC amplifier that controls the deflector, and a position shift amount, from a design position, of a drawn position of each evaluation pattern drawn on a first substrate while the settling time and an amount of deflection by the deflector are changed, a shot position correction unit that creates a correction formula indicating a relationship between an amount of deflection and a shot position shift amount at the settling time, from the approximate formula and the settling time for the DAC amplifier based on an amount of deflection of a shot, obtains a position correction amount by using the amount of deflection of the shot and the correction formula, and corrects a shot position defined by the shot data based on the position correction amount, and a drawing unit that performs drawing by using the shot data with a corrected shot position.
Abstract:
A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.
Abstract:
An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.
Abstract:
An electron beam writing apparatus includes an electron gun system to emit an electron beam, a height adjustment unit, arranged at the downstream side compared to the electron gun system with respect to the optical axis direction, to variably adjust a height position of the electron gun system, an electron lens, arranged at the downstream side compared to the height adjustment unit with respect to the optical axis direction, to converge the electron beam, a lens control unit to control, for each variably adjusted and changed height position of the electron gun system, the electron lens such that the electron beam forms a crossover at a predetermined position, and an objective lens, arranged at the downstream side compared to the electron lens with respect to the optical axis direction, to focus the electron beam having passed the electron lens.
Abstract:
A multi charged particle beam writing apparatus includes an aperture member to form multiple beams, a blanking plate in which there are arranged a plurality of blankers to respectively perform blanking deflection for a corresponding beam in the multiple beams having passed through a plurality of openings of the aperture member, a blanking aperture member to block each beam having been deflected to be in OFF state by at least one of the plurality of blankers, a first grating lens, using the aperture member as gratings, to correct spherical aberration of the charged particle beam, and a correction lens configured to correct high order spherical aberration produced by the first grating lens.
Abstract:
A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the “on” state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.
Abstract:
A particle beam system includes a charged particle beam source, a beam blanking module connectable to a data network, a focusing lens, a first beam deflection module connectable to the data network, a calculation module configured to determine a deflection time; and an encoding module.
Abstract:
When a time-of-flight mass selector having a chopper using a deflector selects the masses of the ions, an ion beam is deflected. As a result, at least a part of the ion beams diagonally pass through an aperture electrode with respect to the axis. Accordingly, there has been a problem that a position on an object irradiated with a cluster ion beam, results in moving. This mass selector includes: a flight tube having an equipotential space that makes a charged substance fly therein; a deflector that is installed in a downstream side with respect to the flight tube in a direction in which the charged substance flies; a first aperture electrode that is installed in a downstream side with respect to the deflector in a direction in which the charged substance flies; and a second aperture electrode that is installed in between the deflector and the first aperture electrode.