Abstract:
Provided are a large-current and highly stable gas field ionization ion source, and a high-resolution ion microscope with a large focal depth. The present invention relates to an ion microscope provided with a gas field ionization ion source, in which disposed are a refrigerator for cooling the gas field ionization ion source independent of the main body of the ion microscope, and a refrigerant circulation circuit cooling mechanism for circulating a refrigerant between the gas field ionization ion source and the refrigerator. Consequently it is possible to reduce the mechanical vibration of the refrigerator, which propagates to the gas field ionization ion source, and to achieve both the improvement of the brightness of the ion source and the improvement of ion beam focusing performance.
Abstract:
Cooled charged particle sources and methods are disclosed. In some embodiments, a charged particle source is thermally coupled to a solid cryogen, such as solid nitrogen. The thermal coupling can be design to provide good thermal conductivity to maintain the charged particle source at a desirably low temperature.
Abstract:
Ion sources, systems and methods are disclosed. In some embodiments, the ion sources, systems and methods can exhibit relatively little undesired vibration and/or can sufficiently dampen undesired vibration. This can enhance performance (e.g., increase reliability, stability and the like).
Abstract:
A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.
Abstract:
A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
Abstract:
Disclosed are charged particle systems that include a tip, at least one gas inlet configured to supply gas particles to the tip, and a element having a curved surface positioned to adsorb un-ionized gas particles, and to direct desorbing gas particles to propagate toward the tip. The charged particle systems can include a field shunt connected to the tip, and configured to adjust an electric field at an apex of the tip.
Abstract:
A gas field ion source is described. The gas field ion source includes an emitter module. The emitter module includes an emitter holder, an emitter structure, a detachably connectable electrical connection assembly of the emitter module, and a detachably connectable gas supply connection assembly of the emitter module. The gas field ion source further includes a supply module, wherein the supply module includes an electrical conductor for providing voltage and/or current, a gas supply conduit, a thermal conductor, a detachably connectable electrical connection assembly of the supply module, and a detachably connectable gas supply connection assembly of the supply module. The emitter module and the supply module are detachably connectable by the detachably connectable connection assemblies of the emitter module and the detachably connectable connection assemblies of the supply module.
Abstract:
A gas field ion source is described for a charged particle beam device having a charged particle beam column. The gas field ion source includes an emitter unit, a cooling unit, and a thermal conductivity unit for thermal conductivity from the cooling unit to the emitter unit, wherein the thermal conductivity unit is adapted for reduction of vibration transfer from the cooling unit to the emitter unit.
Abstract:
A system (100) for characterizing surfaces can include a nanotip microscope (104) in a first pressure envelope (102) at a first pressure with an electrically conductive nanotip (110) mounted thereon for characterizing a sample surface. The system can also include an ion imaging system (122, 124, 128) within a second pressure envelope (120) at a second pressure. The second pressure can less than or equal to the first pressure and the pressure envelopes (102, 120) can be separated by a pressure limiting aperture (PLA) (132). The system can further include gas sources (116, 118) for introducing into the first pressure envelope (102) at least one gas, and a voltage supply (114) coupled to the nanotip (110) for generating an electric field between the nanotip (114) and the PLA (132). In the system, the electric field repels and ionizes molecules or atoms of the gas in proximity to the nanotip (110) and the ion imaging system (122, 124, 128) collects at least a portion the repelled and ionized molecules or atoms traversing the PLA (132) to image the nanotip (110).