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    METHOD OF FORMING CAPACITIVE MEMS SENSOR DEVICES
    88.
    发明申请
    METHOD OF FORMING CAPACITIVE MEMS SENSOR DEVICES 审中-公开
    形成电容式MEMS传感器器件的方法

    公开(公告)号：US20160363609A1

    公开(公告)日：2016-12-15

    申请号：US15148086

    申请日：2016-05-06

    Applicant: Texas Instruments Incorporated

    Inventor： IRA OAKTREE WYGANT ,  PETER B. JOHNSON

    IPC: G01P15/125 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24

    CPC classification number: G01P15/125 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/036 ,  H02N1/006 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2468 ,  H03H9/2489 ,  H04R19/005 ,  Y10T29/49165

    Abstract: A method of forming a capacitive micro-electro-mechanical system (MEMS) sensor device includes at least one capacitive MEMS sensor element with at least one capacitive MEMS sensor cell. A patterned dielectric layer including a thick dielectric region and a thin dielectric region is formed on a top side of a first substrate. A second substrate is bonded to the thick dielectric region to provide at least one sealed micro-electro-mechanical system (MEMS) cavity. The second substrate is thinned to reduce a thickness of said second substrate to provide a membrane layer. Vias are etched through the membrane layer and said thick dielectric region extending into the first substrate to form embedded vias. A dielectric liner which lines the embedded vias is formed within the first substrate. The embedded vias are filed with electrically conductive TSV filler material to form a plurality of through-substrate vias (TSVs), said plurality of TSVs extending to at least a top of said membrane layer. A patterned metal cap layer including metal caps is formed on top of said plurality of TSVs. Trenches are etched through regions of the membrane layer for releasing a first portion of the membrane layer over said MEMS cavity to provide a MEMS electrode and to define a fixed electrode. A third substrate including an inner cavity and outer protruding portions framing said inner cavity is bonded to the thick dielectric. The protruding portions are bonded to the thick dielectric region and, together with said first substrate vacuum, seals said MEMS electrode. The plurality of TSVs on a bottom side of said first substrate are exposed.

    Abstract translation: 形成电容式微机电系统（MEMS）传感器装置的方法包括具有至少一个电容式MEMS传感器单元的至少一个电容式MEMS传感器元件。 包括厚电介质区域和薄介电区域的图案化电介质层形成在第一衬底的顶侧上。 第二衬底被结合到厚电介质区域以提供至少一个密封的微机电系统（MEMS）空腔。 第二衬底被薄化以减小所述第二衬底的厚度以提供膜层。 通过膜层蚀刻通孔，并且延伸到第一衬底中的所述厚电介质区域形成嵌入的通孔。 在第一基板内形成有嵌入通孔的电介质衬垫。 嵌入的通孔与导电TSV填充材料一起放置以形成多个穿通基板通孔（TSV），所述多个TSV延伸到所述膜层的至少顶部。 在所述多个TSV的顶部上形成包括金属盖的图案化金属盖层。 通过膜层的区域蚀刻沟槽，以在所述MEMS空腔上释放膜层的第一部分，以提供MEMS电极并限定固定电极。 包括内腔的第三基板和框架所述内腔的外突出部分结合到厚电介质。 突出部分结合到厚电介质区域，并与所述第一衬底真空一起密封所述MEMS电极。 在所述第一基板的底侧上的多个TSV暴露。

    Aluminum nitride (AlN) devices with infrared absorption structural layer
    89.
    发明授权
    Aluminum nitride (AlN) devices with infrared absorption structural layer 有权
    具有红外吸收结构层的氮化铝（AlN）器件

    公开(公告)号：US09511994B2

    公开(公告)日：2016-12-06

    申请号：US14480051

    申请日：2014-09-08

    Applicant: INVENSENSE, INC.

    Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

    IPC: H01L29/84 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

    Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

    Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

    HEATING SYSTEM AND METHOD FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS
    90.
    发明申请
    HEATING SYSTEM AND METHOD FOR MICROFLUIDIC AND MICROMECHANICAL APPLICATIONS 审中-公开
    微流体和微生物应用的加热系统和方法

    公开(公告)号：US20160347610A1

    公开(公告)日：2016-12-01

    申请号：US15234312

    申请日：2016-08-11

    Applicant: STMICROELECTRONICS, INC.

    Inventor： Ming FANG ,  Fuchao WANG

    IPC: B81C1/00 ,  H01L49/02 ,  B81B1/00

    CPC classification number: B81C1/00119 ,  B41J2/14056 ,  B41J2/14072 ,  B41J2/14137 ,  B41J2/16 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1639 ,  B81B1/006 ,  B81B2201/052 ,  B81B2201/058 ,  B81C2201/013 ,  B81C2203/075 ,  H01L28/20 ,  Y10T29/49401 ,  Y10T29/49826

    Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

    Abstract translation: 集成半导体加热组件包括半导体衬底，形成在其中的室和与室流体连通的出口，使得流体响应于加热室而离开室。 集成加热组件包括邻近腔室的第一加热元件，该第一加热元件可以产生高于选定阈值的热量，并将腔室中的流体朝向出口偏压。 第二加热元件邻近出口定位以产生高于所选阈值的热量，便于流体通过出口远离腔室的运动。 添加第二加热元件减少了每个加热元件发出的热量，并使吸热材料的厚度最小化到出口的开口端。 由于这样的材料是昂贵的，所以这降低了组件的制造成本和零售价格，同时提高了其效率和使用寿命。

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