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    Pattern Modification Schemes for Improved FIB Patterning
    81.
    发明申请
    Pattern Modification Schemes for Improved FIB Patterning 有权
    用于改进FIB图案化的图案修改方案

    公开(公告)号：US20130092826A1

    公开(公告)日：2013-04-18

    申请号：US13655129

    申请日：2012-10-18

    Applicant: FEI Company

    Inventor： Tom Miller ,  Gene Mirro ,  Cornelis Sander Kooijman ,  Hendrik Jan de Vos

    IPC: H01J3/26

    CPC classification number: H01J3/26 ,  H01J37/1472 ,  H01J37/1477 ,  H01J37/3026 ,  H01J2237/1504 ,  H01J2237/1518 ,  H01J2237/1526 ,  H01J2237/30416 ,  H01J2237/3045 ,  H01J2237/30461

    Abstract: An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.

    Abstract translation: 引导带电粒子束的改进方法，其补偿带电粒子通过改变一个或多个偏转器信号而穿过系统所需的时间。 根据本发明的一个实施例，在数模（D / A）转换之前，将数字滤波器应用于扫描图案，以便减少或消除可能由TOF误差引起的过拍影响。 在其他实施例中，也可以使用模拟滤波器或具有较低带宽的信号放大器的使用来补偿TOF误差。 通过改变扫描图案，可以显着减少或消除超拍效果。

    BEAMLET BLANKER ARRANGEMENT
    82.
    发明申请
    BEAMLET BLANKER ARRANGEMENT 有权
    波纹棉布布置

    公开(公告)号：US20120091318A1

    公开(公告)日：2012-04-19

    申请号：US12905131

    申请日：2010-10-15

    Applicant: Marco Jan Jaco WIELAND ,  Alexander Hendrik Vincent VAN VEEN

    Inventor： Marco Jan Jaco WIELAND ,  Alexander Hendrik Vincent VAN VEEN

    IPC: H01J3/26 ,  G01J1/44

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0437 ,  H01J2237/0492 ,  H01J2237/1504 ,  H01J2237/2485 ,  H01J2237/31762

    Abstract: The invention relates to a charged particle multi-beamlet lithography system for exposing a target using a plurality of beamlets. The system has a beam generator, a beamlet blanker, and a beamlet projector. The beam generator is configured to generate a plurality of charged particle beamlets. The beamlet blanker is configured to pattern the beamlets. The beamlet projector is configured to project the patterned beamlets onto the target surface. The system further has a deflection device. The deflection device has a plurality of memory cells. Each memory cell is provided with a storage element and is connected to a switching electrode of a deflector.

    Abstract translation: 本发明涉及一种用于使用多个子束曝光靶的带电粒子多子束光刻系统。 该系统具有光束发生器，子束遮挡器和小射束投影仪。 束发生器被配置为产生多个带电粒子子束。 子束消除器被配置为对子束进行图案化。 子束投影仪被配置为将图案化的子束投影到目标表面上。 该系统还具有偏转装置。 偏转装置具有多个存储单元。 每个存储单元设置有存储元件，并连接到偏转器的开关电极。

    PATTERN MODIFICATION SCHEMES FOR IMPROVED FIB PATTERNING
    83.
    发明申请
    PATTERN MODIFICATION SCHEMES FOR IMPROVED FIB PATTERNING 有权
    改进FIB图案的图案修改方案

    公开(公告)号：US20110049382A1

    公开(公告)日：2011-03-03

    申请号：US12870816

    申请日：2010-08-28

    Applicant: Tom Miller ,  Gene Mirro ,  Cornelis Sander Kooijman ,  Hendrik Jan De Vos

    Inventor： Tom Miller ,  Gene Mirro ,  Cornelis Sander Kooijman ,  Hendrik Jan De Vos

    IPC: H01J3/14

    CPC classification number: H01J3/26 ,  H01J37/1472 ,  H01J37/1477 ,  H01J37/3026 ,  H01J2237/1504 ,  H01J2237/1518 ,  H01J2237/1526 ,  H01J2237/30416 ,  H01J2237/3045 ,  H01J2237/30461

    Abstract: An improved method of directing a charged particle beam that compensates for the time required for the charged particles to traverse the system by altering one or more of the deflector signals. According to one embodiment of the invention, a digital filter is applied to the scan pattern prior to digital-to-analog (D/A) conversion in order to reduce or eliminate over-shoot effects that can result from TOF errors. In other embodiments, analog filters or the use of signal amplifiers with a lower bandwidth can also be used to compensate for TOF errors. By altering the scan pattern, over-shoot effects can be significantly reduced or eliminated.

    Abstract translation: 引导带电粒子束的改进方法，其补偿带电粒子通过改变一个或多个偏转器信号而穿过系统所需的时间。 根据本发明的一个实施例，在数模（D / A）转换之前，将数字滤波器应用于扫描图案，以便减少或消除可能由TOF误差引起的过拍影响。 在其他实施例中，也可以使用模拟滤波器或具有较低带宽的信号放大器的使用来补偿TOF误差。 通过改变扫描图案，可以显着减少或消除超拍效果。

    Charged particle optical system comprising an electrostatic deflector
    84.
    发明申请
    Charged particle optical system comprising an electrostatic deflector 有权
    带有静电偏转器的带电粒子光学系统

    公开(公告)号：US20100276606A1

    公开(公告)日：2010-11-04

    申请号：US12769712

    申请日：2010-04-29

    Applicant: Norman Hendrikus Rudolf BAARS ,  Gerardus Fernandus Ten Berge ,  Stijn Willem Herman Karel Steenbrink

    Inventor： Norman Hendrikus Rudolf BAARS ,  Gerardus Fernandus Ten Berge ,  Stijn Willem Herman Karel Steenbrink

    IPC: H01J37/147 ,  H01J3/30 ,  H01J37/30

    CPC classification number: H01J37/09 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/22 ,  H01J37/317 ,  H01J37/3174 ,  H01J2237/0437 ,  H01J2237/0453 ,  H01J2237/1504 ,  H01J2237/151 ,  H01J2237/2482

    Abstract: A charged particle optical system comprising a beamlet generator for generating a plurality of beamlets of charged particles and an electrostatic deflector for deflecting the beamlets. The electrostatic deflector comprises first and second electrodes adapted for connection to a voltage for generating an electric field between the electrodes for deflection of the beamlets, the electrodes being at least partially freestanding in an active area of the electrostatic deflector. The electrodes define at least one passing window for passage of at least a portion of the beamlets between the electrodes, the passing window having a length in a first direction and a width in a transverse direction. The system is adapted to arrange the beamlets in at least one row and to direct a single row of the beamlets through the passing window of the electrostatic deflector, the beamlets of the row extending in the first direction. A substantial part of the electrostatic deflector extends beyond the passing window in the first direction.

    Abstract translation: 一种带电粒子光学系统，包括用于产生多个带电粒子束的子束发生器和用于偏转子束的静电偏转器。 静电偏转器包括适于连接到用于在电极之间产生电场以用于偏转子束的电压的电压的第一和第二电极，电极至少部分地独立于静电偏转器的有效区域。 电极限定至少一个通过的窗口，用于在电极之间通过至少一部分子束，通过窗口具有在第一方向上的长度和在横向上的宽度。 该系统适于将子束排列在至少一排中，并且通过静电偏转器的通过窗口（该行的子束在第一方向上延伸）引导单排的子束。 静电偏转器的主要部分在第一方向上延伸超过通过的窗口。

    Charged beam drawing apparatus
    85.
    发明授权
    Charged beam drawing apparatus 有权
    充电光束拉制装置

    公开(公告)号：US07692158B2

    公开(公告)日：2010-04-06

    申请号：US11710930

    申请日：2007-02-27

    Applicant: Munehiro Ogasawara

    Inventor： Munehiro Ogasawara

    IPC: G21K1/08 ,  H01J1/00

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J2237/03 ,  H01J2237/1504 ,  H01J2237/151

    Abstract: A charged beam drawing apparatus deflects, by an electrostatic deflector, a charged beam generated from a charged beam source, and applies the charged beam to a desired position on a sample to draw a pattern. The electrostatic deflector includes a plurality of deflecting electrodes arranged symmetrically with respect to a point around an optical axis of the charged beam, a ground external cylinder which is disposed coaxially with the optical axis and which is provided to enclose the deflecting electrodes, a resistive film provided on an inner surface of the ground external cylinder, and a conductive film provided on a surface of the resistive film. A capacitance is formed between the deflecting electrodes and the conductive film, and a resistance is formed between the ground conductor and the conductive film.

    Abstract translation: 带电束的拉伸装置通过静电偏转器偏转从带电束源产生的带电束，并将带电束施加到样品上的期望位置以绘制图案。 静电偏转器包括相对于带电光束的光轴围绕的点对称布置的多个偏转电极，与光轴同轴设置并且被设置为包围偏转电极的电阻膜 设置在接地外筒的内表面上，以及设置在电阻膜的表面上的导电膜。 在偏转电极和导电膜之间形成电容，并且在接地导体和导电膜之间形成电阻。

    ELECTRON BEAM DRAWING APPARATUS
    86.
    发明申请
    ELECTRON BEAM DRAWING APPARATUS 审中-公开
    电子束绘图设备

    公开(公告)号：US20080231192A1

    公开(公告)日：2008-09-25

    申请号：US12033467

    申请日：2008-02-19

    Applicant: Munehiro Ogasawara

    Inventor： Munehiro Ogasawara

    IPC: H01J23/16

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/147 ,  H01J2237/03 ,  H01J2237/038 ,  H01J2237/1504 ,  H01J2237/151

    Abstract: An electron beam drawing apparatus, comprises an electrostatic deflector which deflects the electron beam by an electric field, a coaxial cable which is connected to deflecting electrodes, and a resistive element which is connected between a central conductor and an outer conductor or the external cylinder. The electrostatic deflector includes the external cylinder provided more downstream than the electron source and kept at the ground potential and a plurality of deflecting electrodes which are provided in the external cylinder. The coaxial cable includes the central conductor and the tubular outer conductor, one end of the central conductor passing through the external cylinder and being connected to the deflecting electrodes and one end of the outer conductor being connected to the external cylinder. The resistive element is set to a resistance for obtaining impedance matching with the coaxial cable.

    Abstract translation: 一种电子束描绘装置，包括通过电场使电子束偏转的静电偏转器，连接到偏转电极的同轴电缆，以及连接在中心导体和外部导体或外部气缸之间的电阻元件。 静电偏转器包括设置在电子源下游并保持在接地电位的外筒，以及设置在外筒中的多个偏转电极。 同轴电缆包括中心导体和管状外部导体，中心导体的一端穿过外部圆筒并连接到偏转电极，外部导体的一端连接到外部圆筒。 电阻元件被设置为用于获得与同轴电缆的阻抗匹配的电阻。

    Technique for reducing pattern placement error in projection electron-beam lithography
    87.
    发明授权
    Technique for reducing pattern placement error in projection electron-beam lithography 失效
    用于减少投射电子束光刻中图案放置误差的技术

    公开(公告)号：US6133987A

    公开(公告)日：2000-10-17

    申请号：US177675

    申请日：1998-10-22

    Applicant: David P. Stumbo

    Inventor： David P. Stumbo

    IPC: H01L21/027 ,  G03F7/20 ,  H01J37/147 ,  H01J37/317 ,  G03B27/54 ,  G21K5/10

    CPC classification number: H01J37/1471 ,  B82Y10/00 ,  H01J2237/1504 ,  H01J2237/153 ,  H01J2237/31764

    Abstract: Electron-beam lithography systems used for transferring images from subfields in a reticle to a wafer. Deflection systems in the electronic lens system are controlled by control systems that include devices to correct misalignment of the electron beams from each of the subfields with the electronic optical axis. In a first embodiment, switches switch between sources to deflect the electron beams to the electronic optical axis and error DACs correct position errors in the sources that are input to the switches. In a second embodiment, the deflection systems deflect the electronic optical axis to coincide with the electron beams from the subfields. In other embodiments, the deflection systems in the electronic lens systems are made insensitive to position errors in deflection control systems by satisfying the condition: G.sub.1 /G.sub.2 =M, where G.sub.1 is the gain of first amplifier amplifying a signal from a DAC which is input to the deflection system deflecting the electron beams from the subfields, G.sub.2 is the gain of a second amplifier amplifying the signal from the DAC which is input to the deflection system deflecting the electron beams to the wafer and M is the magnification of the electronic lens system. Alternatively, the deflection systems deflect the electronic optical axis to coincide with the electron beams from the sub fields. A grillage error DAC supplies a position correction to account for grillage between the subfields. In still other embodiments, a ramp generator supplies a ramp that is input to the deflection systems that are insensitive to position errors in deflection control systems by satisfying the condition: G.sub.1 /G2=M.

    Abstract translation: 用于将图像从掩模版中的子场传送到晶片的电子束光刻系统。 电子透镜系统中的偏转系统由包括用于校正来自每个子场的电子束与电子光轴的未对准的装置的控制系统控制。 在第一实施例中，开关在源之间切换以将电子束偏转到电子光轴，并且误差DAC校正输入到开关的源中的位置误差。 在第二实施例中，偏转系统偏转电子光轴以与来自子场的电子束重合。 在其他实施例中，电子透镜系统中的偏转系统对偏转控制系统中的位置误差不敏感，满足以下条件：G1 / G2 = M，其中G1是从输入的DAC放大信号的第一放大器的增益 偏转系统偏转来自子场的电子束，G2是放大来自DAC的信号的第二放大器的增益，其被输入到将电子束偏转到晶片的偏转系统，M是电子透镜系统的放大率 。 或者，偏转系统偏转电子光轴以与来自子场的电子束重合。 格栅错误DAC提供位置校正以考虑子区域之间的格架。 在其他实施例中，斜坡发生器通过满足条件：G1 / G2 = M，向偏转系统输入对偏转控制系统中的位置误差不敏感的斜坡。

    Scanning electron microscope
    89.
    发明授权
    Scanning electron microscope 失效
    扫描电子显微镜

    公开(公告)号：US5874735A

    公开(公告)日：1999-02-23

    申请号：US840170

    申请日：1997-04-14

    Applicant: Tokusaburo Matsumoto ,  Kouzo Yano ,  Toshihiko Eida

    Inventor： Tokusaburo Matsumoto ,  Kouzo Yano ,  Toshihiko Eida

    IPC: H01J37/07 ,  H01J37/248 ,  H01J37/28

    CPC classification number: H01J37/28 ,  H01J2237/0216 ,  H01J2237/1504

    Abstract: A scanning electron microscope having a unit for reducing image obstacle in an scanning electron microscope which is capable of inexpensively and readily reducing image obstacle caused by any external disturbance such as alternative magnetic field and mechanical vibration in relation to the location of installation of the microscope. In order to reduce the image obstacle, the electron beam deflectors or image shift coils for forming visual image by scanning the surface of sample by using collimated electron beam, is applied superimposing with alternative current for forming alternative magnetic field of the identical frequency, identical intensity, and inverted phase of vibration to the external disturbance to cancel out the fluctuation caused by the external disturbance in the sample surface at the focal plane of the electron beam.

    Abstract translation: 一种扫描电子显微镜，其具有用于减少扫描电子显微镜中的图像障碍的单元，其能够廉价且容易地减少由与显微镜的安装位置相关的诸如替代磁场和机械振动之类的任何外部干扰引起的图像障碍。 为了减少图像障碍物，通过使用准直电子束扫描样品表面形成视觉图像的电子束偏转器或图像移动线圈被施加与替代电流叠加以形成具有相同频率，相同强度的替代磁场 ，并将振动的相位反转到外部干扰，以抵消由电子束焦平面处的样品表面的外部干扰引起的波动。

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