公开(公告)号：US20180233367A1

公开(公告)日：2018-08-16

申请号：US15951495

申请日：2018-04-12

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01J37/20 ,  C23C14/54 ,  H01L21/67 ,  C23C14/48 ,  H01L21/677 ,  H01J37/317

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US09455116B2

公开(公告)日：2016-09-27

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US20150200073A1

公开(公告)日：2015-07-16

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US09218941B2

公开(公告)日：2015-12-22

申请号：US14584252

申请日：2014-12-29

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Marvin Farley

IPC: G21K5/10 ,  H01J37/08 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/047 ,  H01J2237/24514 ,  H01J2237/30483

Abstract: An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.

Abstract translation: 提供了一种用于在工件上以不同能量注入离子的离子注入系统和方法。 该系统包括被配置为将掺杂剂气体离子化成多个离子并形成离子束的离子源。 质量分析器位于离子源的下游并且被配置成质量分析离子束。 减速/加速阶段位于质量分析仪的下游。 能量过滤器可以形成减速/加速阶段的一部分，或者可以位于减速/加速阶段的下游。 设置终端站，其具有与其相关联的工件支撑件，用于在还提供离子束之前定位工件。 扫描装置被配置为相对于彼此扫描一个或多个离子束和工件支撑件。 一个或多个电源可操作地耦合到离子源，质量分析器，减速/加速阶段和能量过滤器中的一个或多个。 控制器被配置为选择性地改变与扫描离子束和/或工件支撑件同时提供给减速/加速阶段和能量过滤器中的一个或多个的一个或多个电压，其中一个或多个 电压至少部分地基于离子束相对于工件支撑件的位置。

公开(公告)号：US20150318142A1

公开(公告)日：2015-11-05

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/147 ,  H01J37/317 ,  H01J37/20

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。

公开(公告)号：US11923169B2

公开(公告)日：2024-03-05

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/022 ,  H01J2237/055 ,  H01J2237/31705

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US20210249222A1

公开(公告)日：2021-08-12

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US10403503B2

公开(公告)日：2019-09-03

申请号：US15951495

申请日：2018-04-12

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  C23C14/48 ,  C23C14/54 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/677

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US09978599B2

公开(公告)日：2018-05-22

申请号：US15609273

申请日：2017-05-31

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01L21/67 ,  H01L21/677 ,  H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  C23C14/54

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.

公开(公告)号：US20170352544A1

公开(公告)日：2017-12-07

申请号：US15609273

申请日：2017-05-31

Applicant: Axcelis Technologies, Inc.

Inventor： Marvin Farley ,  Mike Ameen ,  Causon Ko-Chuan Jen

IPC: H01L21/265 ,  H01L21/67 ,  C23C14/54 ,  H01J37/317 ,  H01J37/20 ,  H01L21/677 ,  C23C14/48

CPC classification number: H01L21/26513 ,  C23C14/48 ,  C23C14/541 ,  H01J37/185 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/31701 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67213 ,  H01L21/67742

Abstract: An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. In the first and second modes, the heated chuck is heated to a first and second temperature, respectively. The first temperature is predetermined. The second temperature is variable, whereby the controller determines the second temperature based on a thermal budget, an implant energy, and/or an initial temperature of the workpiece in the first chamber, and generally maintains the second temperature in the second mode. Transferring the workpiece from the heated chuck to the first chamber removes implant energy from the process chamber in the second mode. Heat may be further transferred from the heated chuck to a cooling platen by a transfer of the workpiece therebetween to sequentially cool the heated chuck.