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公开(公告)号：US20230411124A1
公开(公告)日：2023-12-21
申请号：US18034635
申请日：2021-11-01
Applicant: Lam Research Corporation
Inventor： John Michael KERNS , David Joseph WETZEL , Lin XU , Pankaj HAZARIKA , Douglas DETERT , Lei LIU , Eric A. PAPE
CPC classification number: H01J37/32477 , C04B41/0054 , H01J37/32467 , C04B2235/94 , C04B2235/666 , C04B2235/6028 , C04B35/01
Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.
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2.发明申请公开(公告)号：US20220115214A1
公开(公告)日：2022-04-14
申请号：US17432003
申请日：2020-03-03
Applicant: Lam Research Corporation
Inventor： Lin XU , John DAUGHERTY , Satish SRINIVASAN , David Joseph WETZEL
Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.
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公开(公告)号：US20220392753A1
公开(公告)日：2022-12-08
申请号：US17770147
申请日：2020-10-21
Applicant: LAM RESEARCH CORPORATION
Inventor： Lin XU , Douglas DETERT , John DAUGHERTY , Pankaj HAZARIKA , Satish SRINIVASAN , Nash W. ANDERSON , John Michael KERNS , Robin KOSHY , David Joseph WETZEL , Lei LIU , Eric A. PAPE
IPC: H01J37/32
Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.
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公开(公告)号：US20220093370A1
公开(公告)日：2022-03-24
申请号：US17426965
申请日：2020-02-05
Applicant: Lam Research Corporation , Silfex, Inc.
Inventor： Lin XU , Satish SRINIVASAN , Robin KOSHY , Amir A. YASSERI , Justin TANG , Jie ZHANG , David Joseph WETZEL
IPC: H01J37/32 , H01L21/687 , H01L21/683
Abstract: Textured silicon components of a semiconductor processing chamber having hillock-shaped or pyramid-shaped structures on its surface, and a method of texturing such silicon components. The silicon component can be selectively textured using chemical means to form the hillock-shaped structures to increase the surface area of the silicon component to improve polymer adhesion.
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Patent Agency Ranking
5.发明公开公开(公告)号：US20240212991A1
公开(公告)日：2024-06-27
申请号：US18577115
申请日：2022-08-02
Applicant: Lam Research Corporation
Inventor： Eric A. PAPE , David Joseph WETZEL , Lin XU , Satish SRINIVASAN , Robin KOSHY , Douglas DETERT , Jeremiah Michael DEDERICK
IPC: H01J37/32 , B05D1/02 , H01L21/683
CPC classification number: H01J37/32495 , B05D1/02 , H01J37/32119 , H01J37/32467 , H01J37/32715 , B05D2202/25 , B05D2203/30 , H01J2237/3341 , H01L21/6833
Abstract: A component for use in a semiconductor processing chamber is provided. A component body comprises a metallic material or ceramic material. A coating is disposed on a surface of the component body where the coating comprises a layer of yttrium aluminum oxide, the yttrium aluminum oxide layer being formed of a composition having a molar ratio of 1.0-0.9 yttrium to 1.0-1.1 aluminum over at least 90% of the yttrium aluminum oxide layer.
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公开(公告)号：US20230092570A1
公开(公告)日：2023-03-23
申请号：US17795509
申请日：2021-02-16
Applicant: Lam Research Corporation
Inventor： Lin XU , David Joseph WETZEL , John DAUGHERTY , Hong SHIH , Satish SRINIVASAN , Yuanping SONG , Johnny PHAM , Yiwei SONG , Christopher KIMBALL
Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.
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公开(公告)号：US20230088848A1
公开(公告)日：2023-03-23
申请号：US17792109
申请日：2021-01-21
Applicant: Lam Research Corporation
Inventor： Lin XU , David Joseph WETZEL , Satish SRINIVASAN , Robin KOSHY , John Michael KERNS , John DAUGHERTY
Abstract: A component of a plasma processing chamber having a coating on at least one surface that comprises yttrium aluminum. The coating is an aerosol deposited coating from a powder mixture of an yttrium oxide powder and an aluminum-containing powder and having an yttrium to aluminum ratio of 4:1 to 1:4 by molar number. The coating can be annealed to form a porous ternary oxide.
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公开(公告)号：US20230020387A1
公开(公告)日：2023-01-19
申请号：US17777656
申请日：2020-11-19
Applicant: LAM RESEARCH CORPORATION
Inventor： David Joseph WETZEL , Lin XU , John DAUGHERTY , John Michael KERNS , Satish SRINIVASAN , Robin KOSHY , Michael LOPEZ , Douglas DETERT
Abstract: A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.
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公开(公告)号：US20220181127A1
公开(公告)日：2022-06-09
申请号：US17604956
申请日：2020-05-06
Applicant: Lam Research Corporation
Inventor： Ann ERICKSON , David Joseph WETZEL , Oleksandr MIKHNENKO , Seyedalireza TORBATISARRAF
IPC: H01J37/32 , H01L21/683
Abstract: An electrostatic chuck system is provided. A plate has gas apertures. A body formed by an additive process on a first side of the plate. The body has channels in fluid connection with the gas apertures, coolant channels, and support structure for supporting the gas channels and the coolant channels
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