公开(公告)号：US20220186354A1

公开(公告)日：2022-06-16

申请号：US17600031

申请日：2020-04-13

Applicant: Lam Research Corporation

Inventor： Ann ERICKSON ,  John DAUGHERTY ,  Robin KOSHY

IPC: C23C4/11 ,  C23C28/04 ,  C25D11/18 ,  C23C16/455 ,  C23C16/44

Abstract: A component for use as part of a plasma processing chamber is provided. The component has a component body adapted for use as part of a plasma processing chamber. A first ceramic coating of a ceramic material is on a surface of the component body, wherein the first ceramic coating has a first side adjacent to the component body and a second side spaced apart from the component body and wherein the first ceramic coating has a porosity and density. A second ceramic coating of the ceramic material is on the second side of the first ceramic coating, wherein the second ceramic coating has a porosity that is less than the porosity of the first ceramic coating and the second ceramic coating has a density that is greater than the density of the first ceramic coating.

公开(公告)号：US20180047594A1

公开(公告)日：2018-02-15

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  Robin KOSHY ,  John DAUGHERTY ,  Satish SRINIVASAN

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

公开(公告)号：US20230317424A1

公开(公告)日：2023-10-05

申请号：US18020213

申请日：2021-08-17

Applicant: Lam Research Corporation

Inventor： Harmeet SINGH ,  Robin KOSHY ,  Adrian RADOCEA ,  Lin XU ,  Justin Charles CANNIFF ,  Simon GOSSELIN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01L21/67069 ,  H01J37/32467 ,  H01J37/32807 ,  H01J2237/3341 ,  H01J37/321

Abstract: A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surface comprises 1) a layer of silicon doped with a dopant wherein the dopant is at least one of carbon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 2) a layer of carbon doped with a dopant wherein the dopant is at least one of silicon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 3) a layer consisting essentially of boron, or 4) a layer consisting essentially of tantalum.

公开(公告)号：US20230295798A1

公开(公告)日：2023-09-21

申请号：US18017246

申请日：2021-07-06

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  Robin KOSHY

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/56

CPC classification number: C23C16/405 ,  C23C16/4486 ,  C23C16/56

Abstract: A method for providing a component for using in a plasma processing chamber is provided, wherein the component has a plasma facing surface. A metal oxide layer is provided on the plasma facing surface of the component. The metal oxide layer is exposed to a fluorine containing gas at a temperature of less than 600° C. for at least 2 hours at a partial pressure of at least 0.1 bar.

公开(公告)号：US20230215703A1

公开(公告)日：2023-07-06

申请号：US18009238

申请日：2021-06-15

Applicant: Lam Research Corporation

Inventor： Robin KOSHY ,  Lin XU ,  John DAUGHERTY

IPC: H01J37/32 ,  C23C16/04 ,  C23C16/24

CPC classification number: H01J37/32495 ,  C23C16/24 ,  C23C16/045 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/3321

Abstract: Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.

公开(公告)号：US20220392753A1

公开(公告)日：2022-12-08

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin XU ,  Douglas DETERT ,  John DAUGHERTY ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Nash W. ANDERSON ,  John Michael KERNS ,  Robin KOSHY ,  David Joseph WETZEL ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20220093370A1

公开(公告)日：2022-03-24

申请号：US17426965

申请日：2020-02-05

Applicant: Lam Research Corporation ,  Silfex, Inc.

Inventor： Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Amir A. YASSERI ,  Justin TANG ,  Jie ZHANG ,  David Joseph WETZEL

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

Abstract: Textured silicon components of a semiconductor processing chamber having hillock-shaped or pyramid-shaped structures on its surface, and a method of texturing such silicon components. The silicon component can be selectively textured using chemical means to form the hillock-shaped structures to increase the surface area of the silicon component to improve polymer adhesion.

公开(公告)号：US20240212991A1

公开(公告)日：2024-06-27

申请号：US18577115

申请日：2022-08-02

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  David Joseph WETZEL ,  Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Douglas DETERT ,  Jeremiah Michael DEDERICK

IPC: H01J37/32 ,  B05D1/02 ,  H01L21/683

CPC classification number: H01J37/32495 ,  B05D1/02 ,  H01J37/32119 ,  H01J37/32467 ,  H01J37/32715 ,  B05D2202/25 ,  B05D2203/30 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A component for use in a semiconductor processing chamber is provided. A component body comprises a metallic material or ceramic material. A coating is disposed on a surface of the component body where the coating comprises a layer of yttrium aluminum oxide, the yttrium aluminum oxide layer being formed of a composition having a molar ratio of 1.0-0.9 yttrium to 1.0-1.1 aluminum over at least 90% of the yttrium aluminum oxide layer.

公开(公告)号：US20230331633A1

公开(公告)日：2023-10-19

申请号：US18247724

申请日：2021-11-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Harmeet SINGH ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Robin KOSHY

IPC: C04B35/565 ,  H01J37/32 ,  C04B35/64

CPC classification number: C04B35/565 ,  H01J37/32642 ,  H01J37/3244 ,  C04B35/64 ,  H01J2237/334 ,  C04B2235/3826 ,  C04B2235/3821 ,  C04B2235/612 ,  C04B2235/666 ,  C04B2235/9669

Abstract: A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.

公开(公告)号：US20230088848A1

公开(公告)日：2023-03-23

申请号：US17792109

申请日：2021-01-21

Applicant: Lam Research Corporation

Inventor： Lin XU ,  David Joseph WETZEL ,  Satish SRINIVASAN ,  Robin KOSHY ,  John Michael KERNS ,  John DAUGHERTY

IPC: C23C24/08 ,  C23C4/11 ,  C23C4/08 ,  C04B41/50

Abstract: A component of a plasma processing chamber having a coating on at least one surface that comprises yttrium aluminum. The coating is an aerosol deposited coating from a powder mixture of an yttrium oxide powder and an aluminum-containing powder and having an yttrium to aluminum ratio of 4:1 to 1:4 by molar number. The coating can be annealed to form a porous ternary oxide.