公开(公告)号：US20220392753A1

公开(公告)日：2022-12-08

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin XU ,  Douglas DETERT ,  John DAUGHERTY ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Nash W. ANDERSON ,  John Michael KERNS ,  Robin KOSHY ,  David Joseph WETZEL ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20240212991A1

公开(公告)日：2024-06-27

申请号：US18577115

申请日：2022-08-02

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  David Joseph WETZEL ,  Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Douglas DETERT ,  Jeremiah Michael DEDERICK

IPC: H01J37/32 ,  B05D1/02 ,  H01L21/683

CPC classification number: H01J37/32495 ,  B05D1/02 ,  H01J37/32119 ,  H01J37/32467 ,  H01J37/32715 ,  B05D2202/25 ,  B05D2203/30 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A component for use in a semiconductor processing chamber is provided. A component body comprises a metallic material or ceramic material. A coating is disposed on a surface of the component body where the coating comprises a layer of yttrium aluminum oxide, the yttrium aluminum oxide layer being formed of a composition having a molar ratio of 1.0-0.9 yttrium to 1.0-1.1 aluminum over at least 90% of the yttrium aluminum oxide layer.

公开(公告)号：US20230020387A1

公开(公告)日：2023-01-19

申请号：US17777656

申请日：2020-11-19

Applicant: LAM RESEARCH CORPORATION

Inventor： David Joseph WETZEL ,  Lin XU ,  John DAUGHERTY ,  John Michael KERNS ,  Satish SRINIVASAN ,  Robin KOSHY ,  Michael LOPEZ ,  Douglas DETERT

IPC: C23C16/40 ,  C23C4/11 ,  H01J37/32 ,  C23C16/56 ,  C23C14/08 ,  C23C14/58

Abstract: A method for forming a coating on a component of a substrate processing system includes arranging the component in a processing chamber and applying a ceramic material to form the coating on one or more surfaces of the component. The ceramic material is comprised of a mixture including a rare earth oxide and having a grain size of less than 150 nm and is applied while a temperature within the processing chamber is less than 400° C. The coating has a thickness of less than 30 μm. A heat treatment process is performed on the coated component in a heat treatment chamber. The heat treatment process includes increasing a temperature of the heat treatment chamber from a first temperature to a second temperature that does not exceed a melting temperature of the mixture over a first period and maintaining the second temperature for a second period.

公开(公告)号：US20240308926A1

公开(公告)日：2024-09-19

申请号：US18577889

申请日：2022-08-04

Applicant: Lam Research Corporation

Inventor： Amir A. YASSERI ,  Hong SHIH ,  Satish SRINIVASAN ,  Jeremiah Michael DEDERICK ,  Pankaj HAZARIKA ,  Lin XU ,  Douglas DETERT

IPC: C04B41/00 ,  B24C1/00 ,  H01J37/32

CPC classification number: C04B41/0072 ,  B24C1/003 ,  H01J37/32495

Abstract: A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.

公开(公告)号：US20230411124A1

公开(公告)日：2023-12-21

申请号：US18034635

申请日：2021-11-01

Applicant: Lam Research Corporation

Inventor： John Michael KERNS ,  David Joseph WETZEL ,  Lin XU ,  Pankaj HAZARIKA ,  Douglas DETERT ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32 ,  C04B41/00 ,  C04B35/01

CPC classification number: H01J37/32477 ,  C04B41/0054 ,  H01J37/32467 ,  C04B2235/94 ,  C04B2235/666 ,  C04B2235/6028 ,  C04B35/01

Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.

公开(公告)号：US20230223240A1

公开(公告)日：2023-07-13

申请号：US18009903

申请日：2021-06-16

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  Douglas DETERT

IPC: H01J37/32

CPC classification number: H01J37/32495 ,  H01J37/32807 ,  H01J37/32642 ,  H01J37/32119

Abstract: A component for use in a semiconductor processing chamber is provided. A component body of a dielectric material has a semiconductor processing facing surface. A coating of a dielectric material is on at least the semiconductor processing facing surface, wherein the dielectric material of the component body has a same stoichiometry as the dielectric material of the coating.