Abstract:
A conduction inspection method for a multipole aberration corrector according to one aspect of the present invention includes applying, in a state where a predetermined potential has been applied to each shield electrode, an inspection charged particle beam to pass through a first opening, a second opening, and a third opening, using a multipole aberration corrector which includes an upper-stage substrate where the first opening is formed and a shield electrode is arranged around the first opening, a middle-stage substrate where the second opening is formed, a plurality of control electrodes are disposed to be opposite each other across the second opening, and a plurality of wirings are arranged to be individually connected to one of the plurality of control electrodes which are different from each other, and a lower-stage substrate where the third opening is formed and a shield electrode is arranged around the third opening, and which corrects aberration of a correction charged particle beam passing through the first opening, the second opening, and the third opening by individually variably applying a potential to each of the plurality of control electrodes; measuring, via a wiring individually connected to each control electrode of the plurality of control electrodes in the plurality of wirings, an inflow electron dose of electrons, into each control electrode of the plurality of control electrodes, which are secondarily emitted because the inspection charged particle beam has passed through the first opening, the second opening, and the third opening and has irradiated an object disposed at the downstream side of the lower-stage substrate; and determining individually, for each control electrode, whether there is conduction between a control electrode concerned and a wiring connected to the control electrode concerned, based on a result of measuring the inflow electron dose into each control electrode.
Abstract:
A multi-electron beam image acquiring apparatus includes a stage configured to mount thereon a substrate, an illumination optical system configured to apply multiple primary electron beams to the substrate, a plurality of multipole lenses including at least two stages of multipole lenses, arranged at positions common to a trajectory of the multiple primary electron beams and a trajectory of multiple secondary electron beams which are emitted because the substrate is irradiated with the multiple primary electron beams and each configured to include at least four electrodes and at least four magnetic poles, and a multi-detector configured to detect the multiple secondary electron beams separated from the trajectory of the multiple primary electron beams, wherein one of the plurality of multipole lenses separates the multiple secondary electron beams from the trajectory of the multiple primary electron beams.
Abstract:
Provided is a multiple electron beam inspection apparatus including: an irradiation source irradiating a substrate with multiple electron beams; a stage on which is cable of mounting the substrate; an electromagnetic lens provided between the irradiation source and the stage, the electromagnetic lens generating a lens magnetic field, the multiple electron beams being capable of passing through the lens magnetic field; an electrostatic lens provided in the lens magnetic field, the electrostatic lens including a plurality of through-holes and a plurality of electrodes, the plurality of through-holes having wall surfaces respectively, each of the multiple electron beams being capable of passing through the corresponding each of the plurality of through-holes, each of the plurality of electrodes provided on each of the wall surfaces of the plurality of through-holes, at least one of the through-holes provided apart from a central axis of trajectory of the multiple electron beams having a spiral shape; and a power source connected to the electrodes.
Abstract:
A pattern width deviation measurement method includes measuring width dimensions of a plurality of figure patterns in an optical image from data of gray-scale value profiles of the optical image, using a threshold of a gray-scale value level variably set depending on design dimension information including design width dimension of a corresponding figure pattern of a plurality of figure patterns, and at which influence of a focus position on width dimension becomes smaller, measuring width dimensions of a plurality of corresponding figure patterns in a reference image from data of gray-scale value profiles of the reference image, respectively using the threshold for the corresponding figure pattern of a plurality of figure patterns, and calculating, for each of measured width dimensions of a plurality of figure patterns in the optical image, an amount deviated from a measured width dimension of a corresponding figure pattern in the reference image.
Abstract:
A multi-charged particle beam irradiation apparatus includes a forming mechanism to form multiple charged particle beams, a multipole deflector array to individually deflect each beam of the multiple charged particle beams so that a center axis trajectory of each beam of the multiple charged particle beams may not converge in a region of the same plane orthogonal to the direction of a central axis of a trajectory of the multiple charged particle beams, and an electron optical system to irradiate a substrate with the multiple charged particle beams while maintaining a state where the multiple charged particle beams are not converged.
Abstract:
A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.
Abstract:
According to one aspect of the present invention, a multi-electron beam image acquisition apparatus, includes: a plurality of first electrostatic deflectors in two stages, each of the first electrostatic deflectors having a plurality of electrodes of quadrupoles or more, configured to deflect multiple primary electron beams collectively to scan a substrate with the multiple primary electron beams; a potential application circuit configured to apply a retarding potential to the substrate; a first determination circuit configured to determine a first phase difference of deflection directions for the plurality of first electrostatic deflectors so as to reduce aberration caused by deflection of the multiple primary electron beams according to a magnitude of the retarding potential; and a deflection control circuit configured to apply an individual potential according to the first phase difference of the deflection directions to each electrode of the plurality of first electrostatic deflectors.
Abstract:
An electromagnetic lens includes a coil, and a pole piece configured to include an upper wall, a lower wall, an outer peripheral wall and an inner peripheral wall which are formed using a conductive magnetic material, to surround the coil by the upper wall, the lower wall, the outer peripheral wall and the inner peripheral wall, one of opposite facing surfaces of an upper part and a lower part of the inner peripheral wall and opposite facing surfaces of the upper wall and the inner peripheral wall being insulated electrically, the outer peripheral wall including a laminated structure where a magnetic material and an insulator are alternately laminated in a direction of a central axis of a trajectory of a passing electron beam, and to be covered at least the laminated structure of the outer peripheral wall with an insulator.
Abstract:
A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.
Abstract:
According to one aspect of the present invention, an electron beam image acquisition apparatus includes a first electrostatic lens group correcting a shift amount of a focus position of the primary electron beam from the reference position on the surface of the substrate occurring according to movement of the stage, and a plurality of variation amounts of the primary electron beam on the surface of the substrate by correcting the shift amount of the focus position of the primary electron beam; and a second electrostatic lens group correcting a plurality of variation amounts of an image of a secondary electron beam being emitted from the substrate by irradiating the substrate with the primary electron beam corrected by the first electrostatic lens group, the secondary electron beam passing through at least one electrostatic lens of the first electrostatic lens group.